Oxygen transport and reaction mechanisms in rhenium gate contacts on hafnium oxide films on Si

Abstract

Articles you may be interested in Thermal annealing effects on the structural and electrical properties of HfO 2 / Al 2 O 3 gate dielectric stacks grown by atomic layer deposition on Si substrates

Rhenium Metal and Rhenium Nitride Thin Films Grown by Atomic Layer Deposition

“…As rhenium has been used for preparation of Re/Al‐Al 2 O 3 /Re Josephson tunnel junctions, it could be of interest in superconducting quantum computing and quantum information applications too. Furthermore, 7 nm thick Re gate contacts in Re/HfO 2 /Si(100) stacked structures have been previously evaluated to prevent oxygen diffusion up to 500 °C in oxygen‐containing atmosphere. For the electrode applications in metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) and various capacitors Re could be an interesting alternative to ruthenium as they have nearly identical work functions (Re 4.72 eV and Ru 4.71 eV).…”

“…Although rhenium is rare and can be difficult to synthesize, various methods have still been employed to grow particles, powders, thin films, and coatings. These techniques include chemical vapor deposition (CVD), chemical vapor infiltration (CVI), pulsed laser evaporation (PLE), electron‐beam evaporation, electrodeposition, molecular beam epitaxy (MBE), and magnetron sputtering . Even more limited has been the preparation of rhenium nitrides which have been synthesized by sputtering, ion implantation, pulsed laser deposition, and high‐pressure solid‐state metathesis .…”

Rhenium Metal and Rhenium Nitride Thin Films Grown by Atomic Layer Deposition

“…[6] Notably,R es hould perform similarly as Co and Ni in HER, but rhenium oxides are even better and as good as Pt, [6] which is considered to be the most effective HER catalyst. [9,10] As rhenium has been used for preparation of Re/Al-Al 2 O 3 /Re Josephson tunnel junctions, [11] it could be of interest in superconducting quantum computing and quantum information applications too.F urthermore,7nm thick Re gate contacts in Re/HfO 2 /Si(100) stacked structures have been previously evaluated [12] to prevent oxygen diffusion up to 500 8 8Ci no xygen-containing atmosphere.F or the electrode applications in metal-oxidesemiconductor field-effect transistors (MOSFETs) and various capacitors Re could be an interesting alternative to ruthenium as they have nearly identical work functions (Re 4.72 eV and Ru 4.71 eV). [7] Microwave resonators have been made using epitaxial Re on sapphire.…”

“…Although rhenium is rare and can be difficult to synthesize,v arious methods have still been employed to grow particles,p owders,t hin films,a nd coatings.T hese techniques include chemical vapor deposition (CVD), [7,12] chemical vapor infiltration (CVI), [15] pulsed laser evaporation (PLE), [16] electron-beam evaporation, [12] electrodeposition, [5] molecular beam epitaxy (MBE), [8] and magnetron sputtering. [17] Even more limited has been the preparation of rhenium nitrides which have been synthesized by sputtering, [18,19] ion implantation, [20] pulsed laser deposition, [21] and high-pressure solid-state metathesis.…”

Growth and thermal oxidation of Ru and ZrO2 thin films as oxidation protective layers

“…86 Oxygen transport studies have also been reported for Pt and Re protective layers, considered also as bottom gate electrodes for MOS-like devices. 87,88,89 In the case of gate dielectric layers for CMOS and memory (DRAM) devices, several (usually high-K) binary oxides such as Ta2O5, 90,91 Y2O3, 92,93 Al2O3, 91,94,95,96 HfO2, 97,98,99,100 ZrO2, 34,101,102,103 and TiO2, 104,105,106 and also perovskite materials such as SrTiO3 and (Ba,Sr)TiO3 have been investigated, 107,108 according to their electrical and/or other physical properties after/or during growth. Apart from the characterization of the grown layers, in some of these oxide studies, oxygen diffusion through the gate dielectric towards deeper layers has also been investigated.…”