Oxygen transfer during single silicon crystal growth in Czochralski system with vertical magnetic fields

Kakimoto, Koichi; Yi, Kyung Woo; Eguchi, M.

doi:10.1016/0022-0248(95)00976-0

Cited by 52 publications

(18 citation statements)

References 12 publications

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“…Different arrangements and modifications had been developed, like, e.g., axial magnetic fields (Kakimoto et al, 1996) versus transverse ones (Hoshi et al, 1985), as well as cusp fields (Watanabe et al, 1998), rotating magnetic fields (Dold, 2003;Kakimoto, 2002), or traveling ones . The benefits are obvious: with a proper field design, it is possible to reduce temperature fluctuations (Dold and Benz, 1995;Kanda et al, 1996), to minimize dopant striations (Kakimoto et al, 1995;Kim and Smetana, 1985), to stabilize the interface shape (Lu, 2007), and to lower the oxygen concentration (Gunjai and Ramchandran, 2009).…”

Section: Magnetic Czmentioning

confidence: 99%

Silicon Crystallization Technologies

Dold

2015

Semiconductors and Semimetals

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Section: Magnetic Czmentioning

confidence: 99%

Silicon Crystallization Technologies

Dold

2015

Semiconductors and Semimetals

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“…• Flow control: avoiding time-dependent flows without reducing the mass transport or generating radial segregation. Most methods are based on magnetic fields [14][15][16], but other tools, like double crucibles [17] or axial vibrations [17,18], are also under investigation.…”

Section: Introductionmentioning

confidence: 99%

Czochralski growth of doped germanium with an applied rotating magnetic field

Dold¹

2003

Cryst. Res. Technol.

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The influence of time-dependent buoyancy convection on the temperature field and the microsegregation during the Czochralski growth of doped germanium was investigated. For physical modelling, experiments with gallium melts have been carried out in the temperature range of 690 to 1000 °C. Growth experiments were performed in a 2 inch crucible. Temperature measurements in the melt revealed convective temperature fluctuations in the range of 1.5 K with a standard deviation of σ=0.3 K. The corresponding frequencies are f≤0.6 Hz. The facility was equipped with a rotating magnetic field (RMF) of B max =0.8 mT, adjustable in the range of 5 to 400 Hz. When the maximum field strength was applied, a uniform, azimuthal flow was induced and the germanium melt rotates with 60 rpm. The melt rotation generated by the RMF can completely replace crystal and/or crucible rotation. Growth under an applied RMF results in the lowest microsegregation, compared to the growth without magnetic field / without rotation or to the case when the crystal was rotated but no magnetic field was applied. Increasing the magnetic field strength continuously, the convective temperature fluctuations pass through an intermediated state, where their amplitude becomes even higher, before they are effectively reduced by the RMF. Dedicated to Professor K. W. Benz on the occasion of his 65th birthday.

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“…There have been several experimental [3][4][5][6], analytical [2] and numerical [7][8][9] studies on motions in melt, melt-crystal interface shape and magnetic fields and their effects on the quality of silicon crystals grown by the CZ method. Benz et al carried out many experimental works on the effects of magnetic fields, including rotating magnetic fields, on the motion of melt and melt-crystal interface shape [10,11].…”

Section: Introductionmentioning

confidence: 99%

Numerical study of the effects of cusp‐shaped magnetic fields and thermal conductivity on the melt‐crystal interface in CZ crystal growth

Kakimoto

Liu

2003

Cryst. Res. Technol.

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A numerical study was carried out to determine the effects of magnetic fields and thermal conductivity of a crystal on the melt flow in a crystal growth system. Comparisons of computations for the case of no magnetic field and for two types of cusp-shaped magnetic fields were made. The effect of thermal conductivity of a crystal on the shape of a melt-crystal interface was also investigated. The computation results showed that the magnetic fields have clear effects on both the pattern and strength of flow of the melt and the interface shape. Application of a magnetic field to the Czochralski system is therefore an effective tool for controlling the quality of bulk crystal during Czochralski growth process. The results also showed that the shape of the interface could be modified by changing thermal conductivity of silicon. Dedicated to Professor K. W. Benz on the occasion of his 65th birthday.

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Oxygen transfer during single silicon crystal growth in Czochralski system with vertical magnetic fields

Cited by 52 publications

References 12 publications

Silicon Crystallization Technologies

Silicon Crystallization Technologies

Czochralski growth of doped germanium with an applied rotating magnetic field

Numerical study of the effects of cusp‐shaped magnetic fields and thermal conductivity on the melt‐crystal interface in CZ crystal growth

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