Oxygen radical density measurement in O/sub 2/-N/sub 2/ gas mixture plasmaby means of a platinum made thin wire sensor

The Characteristics of Cu2O Thin Films Deposited Using RF‐Magnetron Sputtering Method with Nitrogen‐Ambient

“…In addition, the value of the Cu/O ratio is close to 2 with an increment of the N 2 flow rate, which seems to play an important role in forming stoichiometric Cu 2 O films. It was reported that the oxygen radical density rapidly increased with the addition of a small amount of N 2 gas in O 2 plasma and then decreased with a large amount of N 2 gas [6]. In addition, sputtered Cu ions seem to be scattered by N 2 gas in plasma.…”

“…In this work, however, the addition of a small amount of N 2 gas seems to affect the formation of an intermediate phase. This result can be explained by the fact that the addition of a small amount of N 2 under an O 2 plasma condition significantly increases the oxygen radical density, owing to the collision of metastable nitrogen molecules and oxygen molecules [6]. Thus, more oxygen would be involved in the film formation at a small N 2 flow rate (1 sccm).…”

“…In this study, we therefore try to make a stoichiometric and single phase Cu 2 O, with the addition of N 2 gas. It was reported that oxygen radical densities in the O 2 -N 2 plasma condition can be controlled by the ratio of O 2 -N 2 gases, which may have an influence on the reactivity between Cu and O atoms [6]. Thus far, another group has tried to use N 2 gas as a p-type dopant gas, but there are no reports of a phase change caused by adding N 2 gas during the deposition process [7].…”