Apatite-type
lanthanum silicate (LSO) is a material with high oxide-ion
conductivity in the low- and intermediate-temperature range (573–873
K) and is, therefore, a promising solid electrolyte for low-temperature
applications such as solid oxide fuel cells and oxygen sensors. Herein,
the effect of B substitution at the Si site in a c-axis-oriented apatite-type lanthanum silicate (La9.7Si5.3B0.7O26.2, c-LSBO)
polycrystal on oxide-ion conduction is investigated. A highly c-axis-oriented LSBO polycrystal is fabricated by a vapor–solid
reaction in which a dense La2SiO5 disk is heated
in B2O3 vapor at ≥1673 K. The oxide-ion
conductivity of c-LSBO reaches 16 mS cm–1 at 678 K with an activation energy of 0.4 eV. The obtained oxide-ion
conductivity of c-LSBO is approximately 190 times
higher than that of yttria-stabilized zirconia and 5.8 times higher
than that of the polycrystalline c-axis-oriented
nondoped lanthanum silicate. Based on 11B nuclear magnetic
resonance measurements, B is located at the SiO4 site as
BO4, suggesting the formation of an oxygen vacancy at the
O4 site located along the c-axis due to charge compensation.
In addition, molecular dynamics simulations indicate that the oxide-ion
diffusion coefficient of the B-doped LSO is higher than that of the
nondoped LSO. The high oxide-ion conductivity of c-LSBO is likely attributable to the formation of an oxygen vacancy
at the O4 site by B doping, which has a lower valency than Si. Therefore, c-LSBO is a promising candidate as a solid electrolyte in
electrochemical devices operating at low and moderately high temperatures.