Oxygen pressure dependence of the grain size and surface morphology in YBa2Cu3O7−<i>x</i> <i>a</i>-axis films

Trajanovic, Z.; Takeuchi, Ichiro; Warburton, PA; Lobb, C. J.; Venkatesan, T.

doi:10.1063/1.113638

Cited by 26 publications

(12 citation statements)

References 8 publications

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“…It seems that the increase in the surface roughness is caused by the reverse sputter of the oxygen ions at the film surface with the increase in oxygen content. The relationship between oxygen content and surface roughness reported by an other group 10) showed the same tendency as our results. According to the relation of the EBCO growth orientation to substrate temperature and oxygen content, non-c-axis-oriented EBCO films were deposited on CeO 2 buffer layers at T s = 600 • C and C o = 20%.…”

Section: Oxygen Content and Substrate Temperature Dependencesupporting

confidence: 92%

Non-c-axis-Oriented EuBa₂Cu₃O_7-δ Thin Films Grown on Al₂O₃(11̄02) Substrates with CeO₂ Buffer Layers

Wakana¹,

Yokosawa²,

Michikami³

1999

Jpn. J. Appl. Phys.

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EuBa 2 Cu 3 O 7−δ (EBCO) thin films with different growth orientations were prepared on Al 2 O 3 (1102) substrates with CeO 2 buffer layers by dc magnetron sputtering. The EBCO thin films were deposited immediately after off-axis rf magnetron sputtering of CeO 2 (001) films. The effects of substrate temperature and oxygen concent on epitaxial orientation of EBCO thin films were examined. With the increase in oxygen concentration, the surface roughness of an EBCO thin film increased. An appropriate oxygen concentration existed. It was clarified that the orientation of an EBCO thin film depended on CeO 2 film thickness. The (100)-and (110)-oriented EBCO thin films were obtained on CeO 2 buffer layers 30-90 Å thick and more than 700 Å thick, respectively. The (100)-and (110)-oriented EBCO films had in-plane epitaxial orientation relationships of Al 2 O 3 [1120] CeO 2 [100] EBCO[013] and Al 2 O 3 [1120] CeO 2 [100] EBCO[110], respectively. The (100)-oriented EBCO films deposited on 50-Å-thick CeO 2 (001) buffer layers had T ce 's of 72.0 K, and (110)-oriented EBCO films deposited on 750-Å-thick CeO 2 (001) buffer layers had T ce 's of 70.0 K. The T ce decreased with increasing CeO 2 buffer layer thickness above 800 Å. The a-axis-oriented EBCO thin films exhibited T ce 's of about 85.4 K on the 50-Å-thick CeO 2 buffer layers prepared by a self-template method.KEYWORDS: EuBa 2 Cu 3 O 7−δ thin film, CeO 2 buffer layer, sapphire substrate, magnetron sputtering, self-template method 5857

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Section: Oxygen Content and Substrate Temperature Dependencesupporting

confidence: 92%

Non-c-axis-Oriented EuBa₂Cu₃O_7-δ Thin Films Grown on Al₂O₃(11̄02) Substrates with CeO₂ Buffer Layers

Wakana¹,

Yokosawa²,

Michikami³

1999

Jpn. J. Appl. Phys.

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“…A small lattice mismatch is responsible for continuous and rapid growth of the PZT crystal structure. Note that by reducing the oxygen pressure from 200 to 100 mTorr, 9 either Pt or Au buffered PZT thin film tends to form the microstructure with fine grains. Actually, as the pressure is reduced, the surface mobility increases, creating larger grains.…”

Section: Resultsmentioning

confidence: 99%

Piezoelectric properties of epitaxial Pb(Zr0.525, Ti0.475)O3 films on amorphous magnetic metal substrates

Chen

Yang

et al. 2012

Journal of Applied Physics

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Epitaxial growth of high piezoelectric constant Pb(Zr0.525, Ti0.475)O3 (PZT) thin films deposited on amorphous magnetic Metglas® substrates by pulsed laser deposition (PLD) is reported. Particularly, Pt or Au buffer layers were employed to initiate epitaxial growth of the PZT films from atop of an amorphous surface. The optimization of deposition conditions for the PZT films with different buffer layers was systematically investigated. The crystal structure, texturing, and surface morphology of the samples were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Ferroelectric and piezoelectric properties were measured indicating high polarization 27 μC/cm2 and piezoelectric constant d33, 46 pm/V for the Pt buffered films. The PZT thin films grown on a magnetostrictive material have demonstrated high quality crystallographic structure and piezoelectric response, having potential for use in emerging magnetoelectric sensors.

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“…Due to the effect of gas pressure on the energy of particles in the laser plume, the orientation and lattice constant of the films grown at low pressure are different from those grown at high pressure. Recently, Trajanovic and co-workers 13 have studied the oxygen pressure dependence of the grain and surface morphology in YBa 2 Cu 3 O 7Ϫx a-axis films grown by PLD, and found that flat films with a roughness of 3.5 nm were obtained at an oxygen pressure of 27 Pa, and rougher films with a roughness of 11 nm were obtained at an oxygen pressure of 133 Pa. On the other hand, when low energy particles arrive at the substrate at higher gas pressure, they will form a lattice having a smaller lattice constant normal to the substrate.…”

Section: Discussionmentioning

confidence: 99%

Scanning force microscopy study of the surface topography of thin BaTiO3 films deposited by pulsed laser ablation

Zhang¹

1996

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The surface topography of thin single-crystal BaTiO 3 films deposited on SrTiO 3 ͑100͒ and YBCO͑001͒/LaAlO 3 ͑100͒ substrates, and thin polycrystalline films deposited on MgO͑100͒ was studied using scanning force microscopy in air. Films 0.37, 0.26, and 0.39 m thick were grown on the SrTiO 3 ͑100͒ substrate at 750°C at oxygen pressures of 0.7, 7, and 70 Pa, respectively. Films 0.47, 0.26, and 0.25 m thick were deposited on the SrTiO 3 ͑100͒ substrate at the temperatures of 550, 750, and 850°C, respectively, at an oxygen pressure of 7 Pa. Films 0.20 and 0.10 m thick were grown on MgO͑100͒ and YBCO͑001͒/LaAlO 3 ͑100͒ substrates, respectively, at 750°C and 7 Pa. Scanning force microscopy images show that, for the deposition temperature of 750°C, when the oxygen pressure is increased from 0.7 to 7 and 70 Pa, the surface topography of the BaTiO 3 films changes from flat to islandlike three-dimensional growth ͑Volmer-Weber mode͒, and the corresponding rms surface roughness values are 1.2, 3.4, and 6.4 nm. With an increase of the deposition temperature from 550 to 750 and 850°C, the surface topography changes from corrugated to rectangular grain, and the corresponding surface roughness values are 1.2, 3.4, and 3.4 nm for an oxygen pressure of 7 Pa. The films on the MgO͑100͒ substrate consist of two kinds of grains, and the corresponding surface roughness value is 1.0 nm. The film on the YBCO͑001͒/LaAlO 3 ͑100͒ substrate is composed of uniform hemispherical grains, and the corresponding surface roughness value is 29 nm due to the roughness of the bare substrate of 31 nm.

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Oxygen pressure dependence of the grain size and surface morphology in YBa2Cu3O7−x a-axis films

Cited by 26 publications

References 8 publications

Non-c-axis-Oriented EuBa₂Cu₃O_7-δ Thin Films Grown on Al₂O₃(11̄02) Substrates with CeO₂ Buffer Layers

Non-c-axis-Oriented EuBa₂Cu₃O_7-δ Thin Films Grown on Al₂O₃(11̄02) Substrates with CeO₂ Buffer Layers

Piezoelectric properties of epitaxial Pb(Zr0.525, Ti0.475)O3 films on amorphous magnetic metal substrates

Scanning force microscopy study of the surface topography of thin BaTiO3 films deposited by pulsed laser ablation

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Oxygen pressure dependence of the grain size and surface morphology in YBa2Cu3O7−x a-axis films

Cited by 26 publications

References 8 publications

Non-c-axis-Oriented EuBa2Cu3O7-δ Thin Films Grown on Al2O3(11̄02) Substrates with CeO2 Buffer Layers

Non-c-axis-Oriented EuBa2Cu3O7-δ Thin Films Grown on Al2O3(11̄02) Substrates with CeO2 Buffer Layers

Piezoelectric properties of epitaxial Pb(Zr0.525, Ti0.475)O3 films on amorphous magnetic metal substrates

Scanning force microscopy study of the surface topography of thin BaTiO3 films deposited by pulsed laser ablation

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Non-c-axis-Oriented EuBa₂Cu₃O_7-δ Thin Films Grown on Al₂O₃(11̄02) Substrates with CeO₂ Buffer Layers

Non-c-axis-Oriented EuBa₂Cu₃O_7-δ Thin Films Grown on Al₂O₃(11̄02) Substrates with CeO₂ Buffer Layers