Oxygen point defect stabilized metastable M3‐phase VO2 films

Reactive Oxidation Induced Stoichiometric Modulation of Multivalent Vanadium Oxides

“…The largest peak area of the V 4+ state was exhibited, similar to the previously reported epitaxially grown VO 2 . [ 31,32 ] In contrast, the V 5+ state peak area ratio remained about ≈30% from 0 to 7 min. This portion of the V 5+ state was attributed to surface oxidization as the film was exposed to air.…”

“…[38] With further increases in ROA time to 20 [39] On the other hand, the sixfold peaks of monoclinic VO 2 (011) rotated by 30°relative to the . [32] However, we could not observe the VO 2 (011) plane associated with data from the ϕ-scan (Figure S5b, Supporting Information). Therefore, the as-grown film is in the V 2 O 3 phase, not VO 2ÀX .…”

“…Furthermore, the sixfold peaks arise from the three equivalent domains of VO 2 matched with the surface hexagonal plane of c‐plane Al 2 O 3 , indicating the following epitaxial relationship: VO 2 (010)//Al 2 O 3 (0001) and VO 2 [100]//Al 2 O 3 [100]. [ 32 ] However, we could not observe the VO 2 (011) plane associated with data from the ϕ ‐scan (Figure S5b, Supporting Information). Therefore, the as‐grown film is in the V 2 O 3 phase, not VO 2− X .…”

Effects of oxygen vacancies and interfacial strain on the metal–insulator transition of VO2 nanobeams

“…17,18 In other words, the MIT in VO 2 is particularly sensitive to the stability of the electron hybridization and consequently to electronic doping, 19 structural defects and lattice strain. 20–22…”

“…17,18 In other words, the MIT in VO 2 is particularly sensitive to the stability of the electron hybridization and consequently to electronic doping, 19 structural defects and lattice strain. [20][21][22] As previously stated, the unique MIT properties of VO 2 render it a promising material for a variety of functional applications; however, the comparatively high T MIT of the VO 2 material is a bottleneck that limits its practical application. In this regard, plenty of efforts have been devoted to modifying the MIT characteristics of VO 2 , particularly by lowering the T MIT as indicated above, i.e., doping, 19,23,24 strain engineering, 25,26 defect engineering or non-stoichiometry effects.…”