Oxygen Plasma Surface Treatment onto ITO Surface for OLEDs Based on Europium Complex

energy-efficient, high-density data storage, and computing are the subject of intense research. [1-3] Memristors are promising building blocks for the next generation of electronics because they enable emerging highly efficient computing platforms such as in-memory and neuromorphic computing. [4,5] Of all genres of memristors, nonvolatile oxide materials are believed to be the most successful candidates in terms of their commercial potential. All the oxide memristors in use today are primarily based on filamentary mechanisms, which are inherently nonuniform [6-8] and thus exhibit performance variability and compromised device-yield. [9] In fact, the issue of nonuniformity and stochasticity is not only specific to oxides but is common in other genres of memristors like phase change memories, [10] nitrides, [11] or those working on metal-ion migration. [12-14] One of the problematic features inherent to any filamentary mechanism is electroforming, which is the first-time switching process involving dissolution, injection, and orientation of the active conducting atoms/ions into the dielectric layer. [7,15-17] The forming process usually requires much higher voltage and current than the reading/writing processes, resulting in One common challenge highlighted in almost every review article on organic resistive memory is the lack of areal switching uniformity. This, in fact, is a puzzle because a molecular switching mechanism should ideally be isotropic and produce homogeneous current switching free from electroforming. Such a demonstration, however, remains elusive to date. The reports attempting to characterize a nanoscopic picture of switching in molecular films show random current spikes, just opposite to the expectation. Here, this longstanding conundrum is resolved by demonstrating 100% spatially homogeneous current switching (driven by molecular redox) in memristors based on Ru-complexes of azo-aromatic ligands. Through a concurrent nanoscopic spatial mapping using conductive atomic force microscopy and in operando tip-enhanced Raman spectroscopy (both with resolution <7 nm), it is shown that molecular switching in the films is uniform from hundreds of micrometers down to the nanoscale and that conductance value exactly correlates with spectroscopically determined molecular redox states. This provides a deterministic molecular route to obtain spatially homogeneous, forming-free switching that can conceivably overcome the chronic problems of robustness, consistency, reproducibility, and scalability in organic memristors.

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Nanometer‐Scale Uniform Conductance Switching in Molecular Memristors

Goswami

Deb

Tempez

et al. 2020

Advanced Materials

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Many‐Body Molecular Interactions in a Memristor

2022

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Electronic transitions in molecular‐circuit elements hinge on complex interactions between molecules and ions, offering a multidimensional parameter space to embed, access, and optimize material functionalities for target‐specific applications. This opportunity is not cultivated in molecular memristors because their low‐temperature charge transport, which is a route to decipher molecular many‐body interactions, is unexplored. To address this, robust, temperature‐resilient molecular memristors based on a Ru complex of an azo aromatic ligand are designed, and current–voltage sweep measurements from room temperature down to 2 K with different cooling protocols are performed. By freezing out or activating different components of supramolecular dynamics, the local Coulombic interactions between the molecules and counterions that affect the electronic transport can be controlled. Operating conditions are designed where functionalities spanning bipolar, unipolar, nonvolatile, and volatile memristors with sharp as well as gradual analog transitions are captured within a single device. A mathematical design space evolves, thereof comprising 36 tuneable parameters in which all possible steady‐state functional variations in a memristor characteristic can be attainable. This enables a deterministic design route to engineer neuromorphic devices with unprecedented control over the transformation characteristics governing their functional flexibility and tunability.

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Lanthanides β-diketonate complexes as energy-efficient emissive materials: A review

Nehra

Dalal

Hooda

et al. 2022

Journal of Molecular Structure

117

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Oxygen Plasma Surface Treatment onto ITO Surface for OLEDs Based on Europium Complex

Cited by 5 publications

References 19 publications

Nanometer‐Scale Uniform Conductance Switching in Molecular Memristors

Nanometer‐Scale Uniform Conductance Switching in Molecular Memristors

Many‐Body Molecular Interactions in a Memristor

Lanthanides β-diketonate complexes as energy-efficient emissive materials: A review

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