Oxygen ordering in untwinned 
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>YBa</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>Cu</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mrow><mml:mn>7</mml:mn><mml:mo>−</mml:mo><mml:mi>δ</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>
 films driven by electrothermal stress

Marinković, Stefan; Trabaldo, Edoardo; Collienne, Simon; Lombardi, Floriana; Silhanek, Alejandro

doi:10.1103/physrevb.107.014208

Cited by 1 publication

(2 citation statements)

References 29 publications

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“…A related mechanism is thermomigration [52]: the heating produced by local dissipation creates a temperature gradient across the device, which leads to migration of the most mobile ions. This mechanism has been discussed earlier in experiments with YBCO nanowires [34,37]. In these, thermomigration of the highly mobile oxygen O −2 in the CuO 2 planes leads to underdoping.…”

Section: Discussionmentioning

confidence: 62%

“…In these experiments, it was shown that a sufficiently large current (typically above 7 MA • cm −2 ) [33][34][35][36] can produce direct electromigration of the different atomic species. It has also been shown that, under certain conditions, the local heating produced by lower current densities can lead to thermomigration of oxygen ions [34,37]. Both current-driven mechanisms can change the cuprate's doping level, disorder, and thus the physical properties at a local scale [38,39].…”

Section: Introductionmentioning

confidence: 99%

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Memristive effects in YBa₂Cu₃O_7-x devices with transistor-like structure

Lagarrigue,

de Dios,

Carreira

et al. 2024

Supercond. Sci. Technol.

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Cuprate superconductors are highly sensitive to disorder and oxygen stoichiometry; even minute variations of those parameters drastically change their electronic properties. Here we exploit this characteristic to engineer a memristive device based on the high-TC superconductor YBa2Cu3O7-x (YBCO), in which local changes of the oxygen content and induced disorder are exploited to produce memory effects. These effects are triggered electrically in a three-terminal device whose structure is reminiscent of a transistor, consisting of a YBCO channel and an Al gate. The Al/YBCO interface, which controls the gate conductance, displays a giant, bipolar, reversible switching across a continuum of non-volatile conductance states spanning over two decades. This phenomenon is controlled by the gate voltage magnitude and is caused by the oxygen exchange between YBCO and Al. Concomitantly, the channel shows a gradual, irreversible superconductor-to-insulator transition that retains a memory of the power dissipated in the device, and can be explained by induced bulk disorder. The observed effects, and the understanding of the interplay between the underlying mechanisms, constitute interesting ingredients for the design and realization of novel memristors and switches for superconducting electronics.

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Section: Discussionmentioning

confidence: 62%

Section: Introductionmentioning

confidence: 99%

Memristive effects in YBa₂Cu₃O_7-x devices with transistor-like structure

Lagarrigue,

de Dios,

Carreira

et al. 2024

Supercond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

Oxygen ordering in untwinned YBa2Cu3O7−δ films driven by electrothermal stress

Cited by 1 publication

References 29 publications

Memristive effects in YBa₂Cu₃O_7-x devices with transistor-like structure

Memristive effects in YBa₂Cu₃O_7-x devices with transistor-like structure

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Oxygen ordering in untwinned YBa2Cu3O7−δ films driven by electrothermal stress

Cited by 1 publication

References 29 publications

Memristive effects in YBa2Cu3O7-x devices with transistor-like structure

Memristive effects in YBa2Cu3O7-x devices with transistor-like structure

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Memristive effects in YBa₂Cu₃O_7-x devices with transistor-like structure

Memristive effects in YBa₂Cu₃O_7-x devices with transistor-like structure