Oxygen ion migration induced polarity switchable SrFeOx memristor for high-precision handwriting recognition

Su, Rui; Xiao, Ruizi; Shen, Chenglin; Song, Danzhe; Chen, Jiabao; Zhou, Bangda; Cheng, Weiming; Li, Yang; Wang, Xinsheng; Miao, Xiangshui

doi:10.1016/j.apsusc.2023.156620

Cited by 10 publications

(3 citation statements)

References 32 publications

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“…Figure 3e−g presents autorelaxation processes of the device at The migration of sulfur and oxygen vacancies has been demonstrated to be responsible for analog memristive behavior. 23,45,46 The formation energy and migration barrier of vacancy are two vital factors for memristive behaviors. Therefore, to unveil the underlying mechanisms of analog and thermal tunable memristive behaviors, we performed firstprincipal calculations of formation energy and migration barrier of vacancies for pristine and sulfurized In 2 Se 3 .…”

Section: Resultsmentioning

confidence: 99%

Thermally Tunable Analog Memristive Behaviors in Sulfurized In₂Se₃ Nanoflakes for Bio-Plausible Synaptic Devices

Hao

Niu

Han

et al. 2023

ACS Appl. Nano Mater.

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Combining the intrinsic superiorities of two-dimensional materials and the emerging demand for neuromorphic computing, two-dimensional memristors have achieved huge advances in materials exploration and synaptic functionality emulation. However, their neuromorphic applications are still in the early stage since digital memristive behaviors for most of them are inconsistent with gradual biological synaptic plasticity. Here, we developed a simple approach to realize analog and thermal tunable memristive behaviors by introducing sulfur vacancies in CVD-grown In 2 Se 3 nanoflakes through secondary sulfurization treatment. The density functional theory and ab initio molecular dynamics simulations confirm that sulfurized and defective In 2 Se 3 can remain thermal stability at elevated temperatures up to 550 K. Therefore, we systematically investigated the temperature-dependent analog and tunable memristive behaviors and realized linear weight update with ultrawide dynamic range in sulfurized In 2 Se 3 at high temperatures. The developed memristive device successfully emulates bio-realistic synaptic functionalities including transformation from short-to long-term plasticity, paired-pulse facilitation, posttetanic potentiation, spike-amplitude-dependent plasticity, spike-rate-dependent plasticity, and spike-time-dependent plasticity effects. It is unveiled that the formation energy of sulfur vacancy is greatly smaller than that of selenium, while their roughly same migration barriers can be modulated by electric field and temperature. Therefore, we put forward that the applied electric field can mediate vacancy migration in the sulfurized In 2 Se 3 to gradually regulate the conductance, thereby realizing the emulation of synaptic plasticity. This work provides a promising approach to designing bio-plausible memristive devices for robust neuromorphic applications at high temperatures.

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Section: Resultsmentioning

confidence: 99%

Thermally Tunable Analog Memristive Behaviors in Sulfurized In₂Se₃ Nanoflakes for Bio-Plausible Synaptic Devices

Hao

Niu

Han

et al. 2023

ACS Appl. Nano Mater.

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“…Ion effect is the main mechanism of memristors at present. [79][80][81][82][83] The memristive materials based on the anionic effect mainly include transition metal oxides, perovskite complex oxides, and wide band gap dielectric oxide insulators. The oxide insulators can be regarded as intrinsic semiconductors caused by defects such as oxygen deficiency or excess.…”

Section: Ion Migrationmentioning

confidence: 99%

Organic Frameworks Memristor: An Emerging Candidate for Data Storage, Artificial Synapse, and Neuromorphic Device

Xu,

Li,

Xia

et al. 2024

Adv Funct Materials

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Memristors have recently become powerful competitors toward artificial synapses and neuromorphic computation, arising from their structural and electrical similarity to biological synapses and neurons. From the diversity of materials, numerous organic and inorganic materials have proven to exhibit great potential in the application of memristors. Herein, this work focuses on a class of memristors based on organic frameworks (OFs) materials, and pay attention to the most advanced experimental demonstrations. First, the typical device structures and memristive switching mechanisms are introduced. Second, the latest progress of OFs‐based memristors is comprehensively summarized, including metal‐organic frameworks (MOFs), covalent organic frameworks (COFs), and hydrogen‐bonded organic frameworks (HOFs), as well as their applications in data storage, artificial synapses, and neuromorphic devices. Finally, the future challenges and prospects of OFs‐based memristors are deeply discussed.

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“…Furthermore, Su et al reported a polarity-switchable device based on BM-SFO(111) and studied the device's LTP, LTD, and its application in the MNIST handwritten recognition scenario [92]. The term "polarity-switchable" refers to the ability to switch the device's operation polarity.…”

Section: Applications Of Topological Phase Transition Memristors In N...mentioning

confidence: 99%

Research Progress on the Application of Topological Phase Transition Materials in the Field of Memristor and Neuromorphic Computing

Zhang,

Su,

Shen

et al. 2023

Sensors

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Topological phase transition materials have strong coupling between their charge, spin orbitals, and lattice structure, which makes them have good electrical and magnetic properties, leading to promising applications in the fields of memristive devices. The smaller Gibbs free energy difference between the topological phases, the stable oxygen vacancy ordered structure, and the reversible topological phase transition promote the memristive effect, which is more conducive to its application in information storage, information processing, information calculation, and other related fields. In particular, extracting the current resistance or conductance of the two-terminal memristor to convert to the weight of the synapse in the neural network can simulate the behavior of biological synapses in their structure and function. In addition, in order to improve the performance of memristors and better apply them to neuromorphic computing, methods such as ion doping, electrode selection, interface modulation, and preparation process control have been demonstrated in memristors based on topological phase transition materials. At present, it is considered an effective method to obtain a unique resistive switching behavior by improving the process of preparing functional layers, regulating the crystal phase of topological phase transition materials, and constructing interface barrier-dependent devices. In this review, we systematically expound the resistance switching mechanism, resistance switching performance regulation, and neuromorphic computing of topological phase transition memristors, and provide some suggestions for the challenges faced by the development of the next generation of non-volatile memory and brain-like neuromorphic devices based on topological phase transition materials.

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Oxygen ion migration induced polarity switchable SrFeOx memristor for high-precision handwriting recognition

Cited by 10 publications

References 32 publications

Thermally Tunable Analog Memristive Behaviors in Sulfurized In₂Se₃ Nanoflakes for Bio-Plausible Synaptic Devices

Thermally Tunable Analog Memristive Behaviors in Sulfurized In₂Se₃ Nanoflakes for Bio-Plausible Synaptic Devices

Organic Frameworks Memristor: An Emerging Candidate for Data Storage, Artificial Synapse, and Neuromorphic Device

Research Progress on the Application of Topological Phase Transition Materials in the Field of Memristor and Neuromorphic Computing

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Oxygen ion migration induced polarity switchable SrFeOx memristor for high-precision handwriting recognition

Cited by 10 publications

References 32 publications

Thermally Tunable Analog Memristive Behaviors in Sulfurized In2Se3 Nanoflakes for Bio-Plausible Synaptic Devices

Thermally Tunable Analog Memristive Behaviors in Sulfurized In2Se3 Nanoflakes for Bio-Plausible Synaptic Devices

Organic Frameworks Memristor: An Emerging Candidate for Data Storage, Artificial Synapse, and Neuromorphic Device

Research Progress on the Application of Topological Phase Transition Materials in the Field of Memristor and Neuromorphic Computing

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Product

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Thermally Tunable Analog Memristive Behaviors in Sulfurized In₂Se₃ Nanoflakes for Bio-Plausible Synaptic Devices

Thermally Tunable Analog Memristive Behaviors in Sulfurized In₂Se₃ Nanoflakes for Bio-Plausible Synaptic Devices