Oxygen-induced giant grain growth in Ag films

Abstract

Thin film crystallites typically exhibit normal or abnormal growth with maximum grain size limited by energetic and geometric constraints. Although epitaxial methods have been used to produce large single crystal regions, they impose limitations that preclude some compelling applications. The generation of giant grain thin film materials has broad implications for fundamental property analysis and applications. This work details the production of giant grains in Ag films (2.5 μm-thick), ranging in size from ≈50 μm to 1 mm, on silicon nitride films upon silicon substrates. The presence of oxygen during film deposition plays a critical role in controlling grain size and orientation.

3D-to-2D Morphology Manipulation of Sputter-Deposited Nanoscale Silver Films on Weakly Interacting Substrates via Selective Nitrogen Deployment for Multifunctional Metal Contacts

“…The mechanisms that govern morphological evolution of metal films on weakly interacting substrates are different than those in strongly interacting homo- and heteroepitaxial systems. ,− As a result, established knowledge for surfactant-based growth manipulation is not directly applicable to the case of noble-metal-film deposition on, e.g., oxides and 2D materials. Despite this, empirical studies exist in which less-noble-metal surfactants and seed layers − as well as gaseous surfactants (nitrogen (N 2 ) and oxygen (O 2 )) − have been used to suppress 3D morphology of silver (Ag) and copper (Cu) films on oxide substrates. The presence of surfactants at the film growth front, however, is often accompanied by changes in other physical properties of the noble-metal layers (e.g., electronic, optical, and transport properties), ,, which, if not reversed or mitigated, render surfactant-based approaches largely inapplicable for metal-contact synthesis.…”

Manipulation of thin silver film growth on weakly interacting silicon dioxide substrates using oxygen as a surfactant

“…As such, established knowledge for surfactant-based growth manipulation is not directly applicable to the case of noble-metal film deposition on 2D materials and oxides. Despite the latter, there are empirical studies in which less-noble-metal surfactants and seed layers [30][31][32][33][34][35] , as well as gaseous surfactants [36][37][38][39][40][41] have been used to suppress the 3D morphology of silver and copper films on oxide substrates.…”

Effect of Different Ni Contents on Thermal Stability of Cu(Ni) Alloy Film

“…Annealing-induced thermal strains certainly exceeded the yield strength of the Cu(Ni) films, resulting in the growth of larger grains over smaller ones for strain energy density minimization. 37 The grain size of Cu(Ni) 3 was the smallest among the three samples. The insoluble elements can inhibit the recovery and recrystallization of Cu grains.…”