Oxygen implantation induced interdiffusion in AlGaAs/GaAs quantum well structures

Abstract

Articles you may be interested inSiNx-induced intermixing in AlInGaAs/InP quantum well through interdiffusion of group III atoms J. Appl. Phys. 112, 093109 (2012); 10.1063/1.4764856 Depth profile of the implantation-enhanced intermixing of Ga + focused ion beam in AlAs/GaAs quantum wellsThe effects of low dose (10 14 ions/cm 2 ) oxygen implantation on the subband structure of an AlGaAs/GaAs single quantum well is reported here using photoluminescence and photoreflectance spectroscopy. Postimplantation rapid thermal annealing at 900°C up to 180 s induces compositional interdiffusion resulting in enhanced transition energy shifts and a reduction in the photoluminescence count rate. Comparisons of transition energy shifts show that the electron two to heavy-hole two transition energy is more sensitive than the ground state electron to heavy-hole transition for these annealing conditions.