Oxygen electromigration induced nonvolatile resistance switching at Ag/La2CuO4+x interface

Shi, Jueli; Zhao, Yadong; Zhang, H. J.; Tian, H. F.; Zhang, X. P.

doi:10.1063/1.3133353

Cited by 23 publications

(19 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Modification of the Schottky barrier height has been proposed to explain the resistive switching mechanism in the Ag/La 2 CuO 4+x /Pt device with a positive programming voltage first applied to the Pt electrode. 15 However, the hysteresis shape of the first cycle for the Ag/La 2 CuO 4+x /Pt device was completely different from that shown in Fig. 2a, where both the negative and positive segments of the resistive switching hysteresis in the memory cell gradually varied ͑no sharp variation in the current͒, indicating that no evidence of nanofilaments was found, and the direction of the electrical field had no obvious influence on the appearance of the sharp variation in the current.…”

mentioning

confidence: 84%

The Resistive Switching Mechanism of Ag/SrTiO[sub 3]/Pt Memory Cells

Yan

Yin

et al. 2010

Electrochem. Solid-State Lett.

View full text Add to dashboard Cite

Reproducible and reliable bipolar resistive switching was obtained from Ag/SrTiO 3 ͑STO͒/Pt memory cells. The current-voltage characteristic of the Ag/STO/Pt cells with a positive voltage applied to the Pt electrode and the results of X-ray photoelectron spectroscopy imply that the electrochemical reaction and the diffusion of Ag + ions play a critical role in the resistive switching effect. The temperature dependence of the on-state resistance, combined with the time dependence of the on-and off-state resistances under a constant voltage, provides further evidence that the resistive switching mechanism should be ascribed to the formation and dissolution of the metallic Ag nanofilaments.Resistance-change random access memory ͑RRAM͒, which adopts the resistive switching effect between the high resistance state ͑HRS͒ and the low resistance state ͑LRS͒ as the storage state "0" or "1," has attracted more attention due to its low power dissipation, high switching speed, simple fabrication process, etc. Moreover, its excellent size scalability, which can be smaller than 4F 2 ͑F is the minimum large-scale integrated line pitch͒, can overcome the problems of physical and technical limits in developing nextgeneration nonvolatile memory products. 1,2 The metal-insulatormetal heterostructure is the general configuration for RRAM, where the resistance of the insulator can be changed by the external stimulation of an electric field. Therefore, many insulator materials, including transition-metal oxides, 3,4 perovskite oxides, 5-9 organic compounds, 10,11 and solid electrolyte 12-14 films, have been widely investigated as storage media. Among these materials, perovskite oxides, such as SrTiO 3 ͑STO͒, 5 Cr-doped SrZrO 3 , 6 ͑Ba,Sr͒͑Zr,Ti͒O 3 , 7 Pr 0.7 Ca 0.3 MnO 3 ͑PCMO͒, 8 and La 0.7 Ca 0.3 MnO 3 ͑LCMO͒, 9 have also been given intensive interest owing to the great variability in their electrical properties induced by external means. STO is especially suitable to serve as the insulator material for the RRAM due to its simple structure. The undoped STO exhibits a bistable resistive switching effect resulting from oxygen transport along the filaments based on dislocations. 5 In recent research, Ag films were extensively employed as the electrode for RRAM devices; however, the mechanism for the resistive switching effect is still an open question. It can be divided into two classes: In the first class, the models of the trapped and detrapped space-charge limited conduction, the modification of the Schottky barrier height and the Mott-transition at the interface have been proposed to interpret the resistive switching mechanism, such as in Ag/PCMO, 8 Ag/LCMO, 9 Ag/La 2 CuO 4+x , 15 Ag/P y L 0.357−y C 0.325 MnO 3 , 16 etc. In the second class, the resistive switching mechanism was ascribed to the formation and dissolution of Ag nanofilaments through the electrochemical redox reaction. First, the Ag atoms in the Ag electrode are oxidized to Ag + ions when a positive voltage is applied to the Ag electrode ͑Ag + e − = Ag + ͒. Then, the...

show abstract

mentioning

confidence: 84%

The Resistive Switching Mechanism of Ag/SrTiO[sub 3]/Pt Memory Cells

Yan

Yin

et al. 2010

Electrochem. Solid-State Lett.

View full text Add to dashboard Cite

show abstract

“…14,15 One key element in resistive switching concerns the Schottky barrier effect at the high work function metal/ complex oxide interface. Recent studies 14,[16][17][18][19] focus on the migration mechanisms of V •• o and the modulation of the barrier height, provided that the height of a potential barrier would be given by the depletion of free oxygen vacancies. The aim of the present report is to provide a new insight into resistive switching phenomena by studying the effect of a blocking barrier located at the active electrode, and also, the effect of continuous soft-breakdown processes through a microscale insulating layer of TiO 2 .…”

Section: Introductionmentioning

confidence: 99%

Aging process of unipolar resistive switching in microscale cylindrical Fe-base alloy/TiO2/Au-cells

Miranda

Gómez‐Polo

Gil

2012

Journal of Applied Physics

View full text Add to dashboard Cite

Articles you may be interested inHydrothermal epitaxial growth and nonvolatile bipolar resistive switching behavior of LaFeO3-PbTiO3 films on Nb:SrTiO3 (001) substrate Appl. Phys. Lett. 105, 152904 (2014); 10.1063/1.4898337 Unipolar resistive switching behavior of amorphous YCrO3 films for nonvolatile memory applications J. Appl. Phys. 116, 084505 (2014); 10.1063/1.4893661Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing Hard x-ray photoelectron spectroscopy study of the electroforming in Ti/HfO2-based resistive switching structures Appl.Evidence of unipolar resistive switching is observed along the aging process of cylindrical microscale Fe-base alloy=TiO 2 =Au devices (MIM-cells). In the early stages of aging, under low electric fields, we show evidence of the effect of a blocking barrier (a Schottky-type depletion layer) at the active TiO 2 =Au interface which is measured in the OFF-state before the set process is triggered. Resistance transients after resets, R OFF ðtÞ, provide a relaxation time that is explained in terms of the drifting processes of oxygen vacancies. In the aged stages under high electric fields, a highly insulating behavior is observed in the OFF-state (before the set is produced) which yields fluctuating values of R OFF . Under these conditions, we show that a recovery of the blocking barrier is still feasible by inverting the polarity of the applied voltage. Further on, the resistance switching is studied at different voltage sweep rates which provide the maximum rate that is necessary to accomplish with the resistive switching dynamics, in order to allow the diffusion of the mobile species. V C 2012 American Institute of Physics. [http://dx.

show abstract

“…The contact resistance is very similar to what we find for Au, with the Au contact resistance being slightly lower. This is what is expected from the work functions of the two materials and is also observed in other experiments [78]. Furthermore, we have found that gold has a higher adhesion to both NCCO and LSCO than silver, making fabrication easier.…”

Section: Contact Resistancesupporting

confidence: 73%

“…The contact resistance of gold to NCCO shows an ohmic behavior, but LSCO has been found to form a Schottky-type contact with contact metals like gold or silver [78] and on e.g. Nb-STO [79].…”

Section: Contact Resistancementioning

confidence: 99%

At the interface between electron and hole-doped cuprates

Hoek¹

View full text Add to dashboard Cite

CoverThe cover shows a false color scanning electron microscope image (250 µm wide from front to back) of an eerie landscape of cones and ridges that forms on the surface of YBa 2 Cu 3 O 7-x during pulsed laser ablation. With each pulse, the surface cracks and ripples due to large thermal stresses. The cones form as yttrium collects in the crests of the ripples, causing them to harden and protect the material underneath. The resulting landscape bears a striking resemblance to rock formations called Hoodoos, which form via a similar mechanism, but on a much larger scale.

show abstract

Oxygen electromigration induced nonvolatile resistance switching at Ag/La2CuO4+x interface

Cited by 23 publications

References 18 publications

The Resistive Switching Mechanism of Ag/SrTiO[sub 3]/Pt Memory Cells

The Resistive Switching Mechanism of Ag/SrTiO[sub 3]/Pt Memory Cells

Aging process of unipolar resistive switching in microscale cylindrical Fe-base alloy/TiO2/Au-cells

At the interface between electron and hole-doped cuprates

Contact Info

Product

Resources

About