2013
DOI: 10.1016/j.matlet.2012.11.003
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Oxygen effects on barium strontium titanate morphology and MOS device performance

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Cited by 9 publications
(2 citation statements)
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References 29 publications
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“…The vacancies in the system can be polarised under an Downloaded by [UOV University of Oviedo] at 10:59 14 October 2014 alternating electric field. Therefore, the dielectric loss increases with the increasing of Zn content [17,21]. Figure 6 shows the frequency dependence of dielectric constant of the pure and Zn-doped BZT films.…”
Section: Film Characterizationmentioning
confidence: 99%
“…The vacancies in the system can be polarised under an Downloaded by [UOV University of Oviedo] at 10:59 14 October 2014 alternating electric field. Therefore, the dielectric loss increases with the increasing of Zn content [17,21]. Figure 6 shows the frequency dependence of dielectric constant of the pure and Zn-doped BZT films.…”
Section: Film Characterizationmentioning
confidence: 99%
“…It has been reported that BST with Ba 1-x Sr x TiO 3 (x:0-1) compositions possesses attractive dielectric properties and fulfills the requirements of high permittivity capacitors, electro-optic devices, pyroelectric sensors, and piezoelectric transducers (Manavalan, 2005). BST has a unique perovskite crystal structure with piezoelectric, pyroelectric, and ferroelectric properties (Motaleb et al, 2013).…”
Section: Introductionmentioning
confidence: 99%