Oxygen Doping of Solution-Grown GaP

Foster, L. M.; Scardefield, J. E.

doi:10.1149/1.2411919

Cited by 41 publications

(16 citation statements)

References 2 publications

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“…The maximum recorded oxygen content does not exceed 0.2 at.%. Most of the measurements agree with each other, [31][32][33] while the solubility reported by other authors appears as underestimated 34 or overestimated. 35 In the last two works, the solubility has been calculated from the measurements of diffusivity and/or electromotive force (emf), which require taking a great care to avoid systematic errors.…”

Section: (2) Solubility Of Oxygen In Liquid Galliumsupporting

confidence: 81%

Thermodynamic Assessment of the Gallium‐Oxygen System

Zinkevich

Aldinger

2004

Journal of the American Ceramic Society

154

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The experimental information relevant to the Ga‐O binary system has been critically assessed. A self‐consistent set of Gibbs energy functions describing the phases in this system and a phase diagram are presented for the first time. The adjustable parameters of the models are obtained by a least‐squares fit to the experimental data. The liquid phase is described by Hillert's partially ionic liquid model. The gallium oxides (α‐, β‐, γ‐, and δ‐Ga2O3) are modeled as stoichiometric phases. The gas phase is treated as an ideal solution of the species Ga, Ga2, Ga2O, GaO, O, O2, and O3. The calculated phase diagram and thermodynamic properties agree very well with most of the experimental measurements.

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Section: (2) Solubility Of Oxygen In Liquid Galliumsupporting

confidence: 81%

Thermodynamic Assessment of the Gallium‐Oxygen System

Zinkevich

Aldinger

2004

Journal of the American Ceramic Society

154

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“…1 of Ref. (13), assume 80% Zn ionization (7), and use the measured values of NA-ND = 5.3 X 1017 cm -3 and ~D = 175 nsec for the Zn-doped junction and NA --ND = 4.0 X 1017 cm -3 and ~D = 310 nsec for the Zn,Odoped junction we conclude z~/T,t increases from ~0.3 to 3.0 with the O-doping. Correspondingly, the measured (peak) electroluminescent efficiency increased from 1.5% (no Ga203 added) to 5.5% with the Odoping.…”

Section: Residual Oxygenmentioning

confidence: 78%

“…s For l a y e r s g r o w n in e v a c u a t e d capsules, the p r e c i p i t a t e s are confined to t h e surface of t h e L P E l a y e r a n d a p p e a r to be g r a n u l a r ; hence, the s u p e r s a t u r a t The solubility limit of Ga203 in Ga at 1025~ has been determined to be --0.01 m / o (7). When the Ga solution is saturated with GaP, the liquid concentration where Ga-GaP-Ga203 are in equilibrium shiftsto --0.008 m/o Ga203 (5).…”

Section: Dynamic Oxygen Incorporation and Ga203 Precipitationmentioning

confidence: 99%

On the Incorporation of Oxygen in GaP Liquid Phase Epitaxy Layers

Soul¹,

Hackett²

1972

J. Electrochem. Soc.

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Previous optical absorption studies suggest the presence of significant background concentrations of oxygen in GaP (1). According to Miyauchi et al. (2), residual oxygen could be comparable to the total oxygen concentration 1 in O-doped crystals. In other experiments (4), the oxygen concentration could not be correlated with the Ga203 addition to the growth solution, and changes in oxygen concentration were reported to occur during low-temperature annealing. More recently, electrically inactive oxygen, in the form of ~-Ga203 precipitates, have been observed in O-doped SG (solution grown) and LPE (liquid phase epitaxy) crystals (5). The possibility of such large variations in the oxygen concentration and concomitant variation in the number of Zn-O (red) radiative centers (6) have important consequences on the reproducibility of luminescent properties. In this work, we have studied the importance of the above factors in determining the oxygen concentration in GaP LPE layers. We have also examined several aspects of dynamic oxygen incorporation which clarify earlier results on O-doping (7-9) and have determined the maximum oxygen concentration which can be incorporated via LPE growth at ~1025~ ExperimentalBoth Zn-and Zn,O-doped layers were grown on Tedoped (ND--NA~8 • 1017 ) SG or LEC (liquid encapsulation Czochralski) substrates using a fused quartz sealed-tube LPE system which has been described elsewhere (9). Except where indicated, layers were grown in evacuated ampoules which were cooled from 1025 ~ to 600~ at a rate of 10~For several cases, encapsulated mesa diodes were fabricated (8) and the electroluminescent quantum efficiency n of representative diodes was measured at 300~ in a calibrated integrating sphere. The electroluminescent time-decay T D was also measured at 300~ using pulsed current excitation and an appropriate detection system (10). Near-junction oxygen concentrations were computed (9) from high resolution doping profiles (11) of the Zn-and Zn, O-doped LPE layers. Table I summarizes some of the experimental results. Results and Discussion Residual OxygenWe have previously shown (8) that at a relatively high Zn concentration of ~1.3 • 10 ls atoms/cm -3 [0.15 mole per cent (m/o) in the LPE solution], ~ increases monotonically with Ga203 addition, demonstrating that substantial and controlled additions of oxygen can be incorporated by LPE, contrasting with the results recently reported for SG crystals (1, 2, 4).The most efficient GaP red-emitting diodes have been fabricated, using additions of 0.03 m/o Zn and 0.35 m/o Ga203 to the LPE solution (8) (entry A in Table I). The addition of Ga203 results in compensation of Zn acceptors equivalent to an increase in donor concentration of 2.7 • 1017 atoms/cm 3, which has been interpreted to be entirely due to the deep O donor (9). To substantiate this interpretation, an O-doped LPE layer was grown using the same Ga~O3 addition. The Key words: gallium phosphide, oxygen incorporation, luminescence, liquid phase epitaxy.1 Hereafter, oxygen concentration is us...

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“…In addition, the protecting method of S and Mg co-doping into an electrode NiCl 2 was reported for applications to batteries [45]. Other co-doping effects related to absorption or fluorescence of Si [46], SrTiO 3 and TiO 2 [47,48], GaP [49,50], ZnSe [51,52], ZnS [53], and CdS [54] were also reported. In a different line of work, solution and diffusion of impurities in heavily doped semiconductors were addressed, as well as interactions among pairs of impurity ions.…”

Section: +mentioning

confidence: 99%

A brief review of co-doping

et al. 2016

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Dopants and defects are important in semiconductor and magnetic devices. Strategies for controlling doping and defects have been the focus of semiconductor physics research during the past decades and remain critical even today. Co-doping is a promising strategy that can be used for effectively tuning the dopant populations, electronic properties, and magnetic properties. It can enhance the solubility of dopants and improve the stability of desired defects. During the past 20 years, significant experimental and theoretical efforts have been devoted to studying the characteristics of co-doping. In this article, we first review the historical development of co-doping. Then, we review a variety of research performed on co-doping, based on the compensating nature of co-dopants. Finally, we review the effects of contamination and surfactants that can explain the general mechanisms of co-doping.

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Oxygen Doping of Solution-Grown GaP

Cited by 41 publications

References 2 publications

Thermodynamic Assessment of the Gallium‐Oxygen System

Thermodynamic Assessment of the Gallium‐Oxygen System

On the Incorporation of Oxygen in GaP Liquid Phase Epitaxy Layers

A brief review of co-doping

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