1969
DOI: 10.1149/1.2411919
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Oxygen Doping of Solution-Grown GaP

Abstract: The solubility of oxygen in Zn-doped, solution-grown GaP was determined from the degree of compensation of the Zn by the oxygen electrons. An oxygen content of 7 x 10 TM cm -3 was obtained for crystals grown at 1144~ from Ga-GaP melts that were doped with 0.016 m/o (mole per cent) Ga203. The solubility of Ga203 in Ga as a function of temperature was also determined, and a distribution coefficient for oxygen between the solid and liquid of 0.0055 was derived. The implications of these findings for the generatio… Show more

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Cited by 41 publications
(16 citation statements)
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“…The maximum recorded oxygen content does not exceed 0.2 at.%. Most of the measurements agree with each other, [31][32][33] while the solubility reported by other authors appears as underestimated 34 or overestimated. 35 In the last two works, the solubility has been calculated from the measurements of diffusivity and/or electromotive force (emf), which require taking a great care to avoid systematic errors.…”
Section: (2) Solubility Of Oxygen In Liquid Galliumsupporting
confidence: 81%
“…The maximum recorded oxygen content does not exceed 0.2 at.%. Most of the measurements agree with each other, [31][32][33] while the solubility reported by other authors appears as underestimated 34 or overestimated. 35 In the last two works, the solubility has been calculated from the measurements of diffusivity and/or electromotive force (emf), which require taking a great care to avoid systematic errors.…”
Section: (2) Solubility Of Oxygen In Liquid Galliumsupporting
confidence: 81%
“…1 of Ref. (13), assume 80% Zn ionization (7), and use the measured values of NA-ND = 5.3 X 1017 cm -3 and ~D = 175 nsec for the Zn-doped junction and NA --ND = 4.0 X 1017 cm -3 and ~D = 310 nsec for the Zn,Odoped junction we conclude z~/T,t increases from ~0.3 to 3.0 with the O-doping. Correspondingly, the measured (peak) electroluminescent efficiency increased from 1.5% (no Ga203 added) to 5.5% with the Odoping.…”
Section: Residual Oxygenmentioning
confidence: 78%
“…s For l a y e r s g r o w n in e v a c u a t e d capsules, the p r e c i p i t a t e s are confined to t h e surface of t h e L P E l a y e r a n d a p p e a r to be g r a n u l a r ; hence, the s u p e r s a t u r a t The solubility limit of Ga203 in Ga at 1025~ has been determined to be --0.01 m / o (7). When the Ga solution is saturated with GaP, the liquid concentration where Ga-GaP-Ga203 are in equilibrium shiftsto --0.008 m/o Ga203 (5).…”
Section: Dynamic Oxygen Incorporation and Ga203 Precipitationmentioning
confidence: 99%
“…In addition, the protecting method of S and Mg co-doping into an electrode NiCl 2 was reported for applications to batteries [45]. Other co-doping effects related to absorption or fluorescence of Si [46], SrTiO 3 and TiO 2 [47,48], GaP [49,50], ZnSe [51,52], ZnS [53], and CdS [54] were also reported. In a different line of work, solution and diffusion of impurities in heavily doped semiconductors were addressed, as well as interactions among pairs of impurity ions.…”
Section: +mentioning
confidence: 99%