Oxygen Deficiency and Vacancy Formation in LSCO/PLZT/LSCO Capacitors

Abstract

Vacancy type defects in L~.5Sr0.sCo03 / PbO.9Lao.dhO.2Ti0.8 / Ladh5Co03capacitors were investigated by positron depth profiling. Post-growth annealing of the capacitor structure in oxygen deficient atmosphere exhibits the formation of vacancy type defects in all layers. A significant increase in open volume defects was found in the top and bottom electrode. The changes in the bottom electrode were studied more closely by etching off the top layer.