Oxygen Concentration in the Top Silicon Layer of Silicon-on-Insulator    Materials Formed by Low-Dose Implantation of Oxygen

Saito, M.; Jablonski, J.; Katayama, T.; Miyamura, Yoshiji; Ikegaya, Kazuyoshi; Imai, Masato

doi:10.1143/jjap.35.l359

Cited by 3 publications

(3 citation statements)

References 5 publications

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“…But in our low-dose SIMOX, it has been confirmed that oxide precipitates hardly exist in the top Si layer. 23 The latter signal may be "new donors" formed at higher temperatures (650-750°C) than thermal donors.2425 When the magnetic field was parallel to the .100> direction, the spectrum of the implanted sample showed two peaks at p = 2.0055 and 2.0036. Overlap of these peaks shields the dependence of their p values on the rotation angle of the magnetic field.…”

Section: Resultsmentioning

confidence: 99%

“…'6 In n-metaloxide-semiconductor field effect transistors (n-MOSFET5), however, parasitic bipolar effects degrade their performance; for example, abnormal lowering of threshold voltage and drain-to-source breakdown voltage. To overcome this problem, methods such as using a lightly doped source,' a SiGe narrow-bandgap source, 23 and without an Ar dose of 2 X iO' cm2 are shown in Fig. i.…”

Section: Introductionmentioning

confidence: 99%

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Recombination Centers Created by Ar + ‐Ion Implantation into SIMOX Substrates

Takahashi

Sakakibara

Ohno

1998

J. Electrochem. Soc.

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The characteristics of the defects created by Ark-ion implantation into SIMOX substrates, to suppress the parasitic bipolar effect in a floating-body n-metal-oxide-semiconductor field effect transistor/SIMOX (n-MOSFET/SIMOX) were investigated. Secondary-ion mass spectroscopy showed that implanted Ar atoms gathered in the top Si layer by annealing and their concentration decreased with increasing annealing temperature. No secondary defects were observed in the top Si layer, by cross-sectional transmission electron microscopy, when Ar* ions were implanted near the interface between the top Si layer and the buried oxide (BOX) layer. The implanted Ar atoms did not affect boron atoms, but they deactivated phosphorous atoms electrically. This deactivation is thought to form an argon-phosphorous complex.Electron spin resonance measurements showed that the defects created in SIMOX substrates were paramagnetic defects called the P6 centers at the top-Si/BOX interface. Therefore, it is concluded that an Ar atom itself does not form a recombination center and that the P6 centers created by Ar implantation act as recombination centers preventing parasitic bipolar action in an n-MOSFET/SIMOX.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Recombination Centers Created by Ar + ‐Ion Implantation into SIMOX Substrates

Takahashi

Sakakibara

Ohno

1998

J. Electrochem. Soc.

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“…Gosele et al2': the BOX growth by ITOX requires an oxygen concentration in the top Si layer above the equilibrium solubility limit. The latter was recently confirmed by calculations of the oxygen concentration in the top Si layer during TTOX 22. Oxygen oversaturation of the silicon should prevent the solubility driven oxygen depletion of the BOX.…”

mentioning

confidence: 62%

Oxygen Vacancies in SiO2 Layers on Si Produced at High Temperature

Afanasʼev

Stesmans

Revesz

et al. 1998

J. Electrochem. Soc.

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Oxygen vacancy centers in buried oxide (BOX) layers of Si/Si02/Si structures produced by implantation of oxygen ions into silicon and subsequent internal thermal oxidation (ITOX) were studied by monitoring hole trapping and paramagnetic properties. During the ITOX process the BOX layer is augmented by thermally grown oxide. We have found that this additional buried thermal oxide layer has nearly the same density of 0 vacancies as the initial buried oxide, and an even higher number of oxygen vacancy clusters (E centers), even though the superficial Si layer was saturated by oxygen. This result suggests the generation of oxygen vacancies in Si-confined Si02 to be due to temperature driven interaction between Si and SiO2. The clustering of the oxygen vacancies observed in all the high temperature oxides (both buried and unconfined), and the inverted relationship between the vacancy charge and its paramagnetic state point toward changes in the SiO2 network structure as compared to the conventional oxides.

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Solutions to Gate Oxide Integrity on TFSOI Substrates Caused by PMOS Threshold-Voltage Implant

et al. 1998

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Due to the lack of effective gettering, gate oxide on thin-film-silicon-on-insulator (TFSOI) substrates is much more sensitive than its bulk Si counterpart to process damage during device fabrication, especially prior to gate oxide growth. Presented in this paper as a typical example is the severe oxide degradation caused by PMOS threshold-voltage implant. Several approaches to circumvent this problem are explored, such as Vt implant without sacrificial oxide (sacox), low temperature anneal before sacox removal, or implementation of lateral gettering. As a result of these efforts, a significant improvement in gate oxide integrity is achieved with increased oxide breakdown voltages and charge-to-breakdowns, as well as a reduction in oxide charge trapping. This work also demonstrates the feasibility of achieving bulk-comparable gate oxide on TFSOI substrates.

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Oxygen Concentration in the Top Silicon Layer of Silicon-on-Insulator Materials Formed by Low-Dose Implantation of Oxygen

Cited by 3 publications

References 5 publications

Recombination Centers Created by Ar + ‐Ion Implantation into SIMOX Substrates

Recombination Centers Created by Ar + ‐Ion Implantation into SIMOX Substrates

Oxygen Vacancies in SiO2 Layers on Si Produced at High Temperature

Solutions to Gate Oxide Integrity on TFSOI Substrates Caused by PMOS Threshold-Voltage Implant

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