1984
DOI: 10.1016/0040-6090(84)90093-2
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Oxygen concentration changes in oxygen-doped molybdenum films under high temperature annealing

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Cited by 14 publications
(4 citation statements)
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“…This maximum interaction between the ambient air and source vapor is important to ensure the following chemical equilibrium shifted to the left: The oxygen exchange between the lattice and ambient species has been investigated with the isotope ( 18 O 2 ) labeling technique and Raman spectroscopy, which shows that gaseous O 2 is able to incorporate into oxygen-deficient MoO 3 . Furthermore, unlike the vacuum growths, the current growth system can be operated at normal pressure (1 atm) for the growth process. The experimental requirements have thus been simplified.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…This maximum interaction between the ambient air and source vapor is important to ensure the following chemical equilibrium shifted to the left: The oxygen exchange between the lattice and ambient species has been investigated with the isotope ( 18 O 2 ) labeling technique and Raman spectroscopy, which shows that gaseous O 2 is able to incorporate into oxygen-deficient MoO 3 . Furthermore, unlike the vacuum growths, the current growth system can be operated at normal pressure (1 atm) for the growth process. The experimental requirements have thus been simplified.…”
Section: Resultsmentioning
confidence: 99%
“…Over past 10 years, thin films and microcrystals of MoO 3 have been prepared by a number of ways. In particular, the high volatility of MoO 3 has been utilized in thin-film growth by the vacuum evaporation method In recent years, flash evaporation and molybdenum metal oxidation have been studied for the processing of MoO 3 thin films and microcrystals, respectively. , It is noted that in most cases either a low-pressure or vacuum condition is required. Thus, from both technological and fundamental viewpoints, new processes with less-demanding fabrication conditions are urgently needed.…”
Section: Introductionmentioning
confidence: 99%
“…10(a) and (b). Crystalline WO 3 and V2O 5 were found to have stable crystallographic structure, even on heating in UHV up to 850 K (Kihlborgn and Magneli, 1955) and 823 K (Bursill, 1969), respectively; but MoO 3 loses its stoichiometry and starts to decompose on heating above 773 K under vacuum (Rao et al, 2013;Diaz et al, 2010;Ohfuji, 1984). Diffusion of oxygen through the MoO 3 lattice becomes rapid at higher temperature and this temperature allows the formation of adsorption and reaction sites for the molecular state of oxygen.…”
Section: Structure and Temperature Dependent Phase Transitionsmentioning
confidence: 99%
“…In the case of MoO 3 thin films, prepared (on cold substrates) either by evaporation or by sputtering techniques, the information relating to their structures is scanty and in the literature such films are declared as amorphous (Tubbs, 1974;Rao et al, 2013;Shiojiri et al, 1979;Carcia et al, 1987) (Hansen and Andersson, 1988;Kumada et al, 1986;Kihlborg, 1959). On heating around 800K, MoO 3 thin film (Epifani et al, 2004;So et al, 1988) or single crystal (Hansen et al, 1988;Wold et al, 1964) is transformed into crystallized MoO 2 by a reduction process: [001] c The crystallized black MoO 2 cannot remain stable at room temperature (Ohfuji, 1984;Naguib and Kelly, 1972) and can be rapidly oxidized back to MoO 3 at higher temperature (∼1273 K) (Ohfuji, 1984).…”
Section: Structure and Temperature Dependent Phase Transitionsmentioning
confidence: 99%