Abstract:In the fabrication of zinc oxide thin film transistor(ZnO TFT), aluminum oxide(Al 2 O 3 ) was deposited as gate insulator by using an oxygen atom neutral beam assisted deposition(NBAD) during e-beam evaporation. From the thickness of the Al 2 O 3 layer evaporated with the oxygen NBAD process and the C-f measurement of metal-insulatormetal(MIM) capacitors fabricated with the NBAD Al 2 O 3 layer, it was possible to conclude that the NBAD Al 2 O 3 layer has a higher thickness and a higher dielectric constant at a… Show more
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