Oxygen Affinity of Metal Electrodes as Control Parameter in Tuning the Performance of Cu<sub><i>x</i></sub>O‐Based Resistive Random Access Memory Devices

Sangani, L. D. Varma; Krishna, Mamidipudi Ghanashyam

doi:10.1002/pssa.201900392

Cited by 6 publications

(2 citation statements)

References 34 publications

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“…With this TiOx oxygen reservoir, the formation of oxygen vacancies in the vicinity of ZrO 2−x /TiO 2 interface will become more beneficial for further improvement in the resistive switching characteristics. Previously reported that metal electrodes with high oxygen affinity can easily cause the interface layer to react with oxide film and the migration of oxygen ions between the interface layer and oxide film is a key for inducing the resistive switching characteristics [23,24].…”

Section: Density Functional Theory (Dft) Calculationsmentioning

confidence: 99%

Eradicating negative-Set behavior of TiO₂-based devices by inserting an oxygen vacancy rich zirconium oxide layer for data storage applications

et al. 2020

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Memristors, with low energy consumption, long data storage and fast switching speed, are considered to be promising for applications such as terabit data storage memory and hardware based neurocomputation applications. However, unexpected negative-Set behavior is a serious issue that causes deterioration of reliability and uniformity of switching parameters. In this work, negative-Set behavior of TiO 2 -based RRAM is successfully eradicated by inserting a thin oxygen vacancy rich ZrO 2−x layer. In addition, oxygen vacancy rich ZrO 2−x layer is also responsible for the enhancement of resistive switching characteristics in terms of excellent endurance performance (2000 DC cycles), good data retention upto 10 4 s and uniformity in Set/Reset voltages. Experimental results and density functional theory (DFT) analysis confirm that an interface layer TiO x has formed between highly reactive electrode (Ti) and ZrO 2 interlayer. This interface layer is serving as a low series resistance layer and oxygen ion reservoir in Set-process and oxygen ions supplier in Reset-process to generate/refill the oxygen vacancies in the formation and rupture of conductive filaments. Comparing with the single layer Ti/TiO 2 /Pt device, it is noteworthy that the switching process in the bilayer (BL) Ti/ZrO 2−x /TiO 2 /Pt memristor device is not affected even at high Reset-voltages, but the negative-Set behavior has been eradicated effectively. This work demonstrates that the insertion of a thin oxygen vacancy rich ZrO 2−x interlayer into TiO 2 -based devices is a feasible approach to solve unpredicted negative-Set behavior of RRAM devices.

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Section: Density Functional Theory (Dft) Calculationsmentioning

confidence: 99%

Eradicating negative-Set behavior of TiO₂-based devices by inserting an oxygen vacancy rich zirconium oxide layer for data storage applications

et al. 2020

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“…The migration of ions is attributed to the rise in current and attributed to the LRS state. In contrast, reversing the direction of the field results in the formation of an oxide insulating layer because of oxygen ions, reacting with the top Cu electrode at the interface, thus lowering the current, referred to as the HRS state. − …”

Section: Methodsmentioning

confidence: 99%

Multifunctional BiFeO₃ Thin Film-Based Memristor Device as an Efficient Synapse: Potential for Beyond von Neumann Computing in Neuromorphic Systems

Prakash

Dixit

2022

ACS Appl. Electron. Mater.

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We report the potential of low-cost sol–gel-synthesized phase pure BiFeO3 thin films as an active material with Cu as the top contact and fluorine-doped tin oxide (FTO) as the bottom contact, that is, Cu/BiFeO3/FTO-based devices for analogue resistive switching characteristics, suitable for beyond von Neumann computing. The Cu/BiFeO3/FTO device showed robust repeatability of bipolar resistive switching up to 3000 cycles. Moreover, retention measurements suggest that the device is stable for 17,000 s at 0.2 V, and endurance measurements suggest reliability for 5000 cycles at 1 and −1 V. Moreover, the Cu/BiFeO3/FTO device showed synaptic behavior, including short- and long-term plasticity and change in ionic conductance with time-dependent pulses suitable for neural network applications. The pulse paired facilitation (PPF) measurements demonstrated a reduction in the PPF value from 9 to 1% with the increasing pulse width from 10 to 400 ms. The strengthening in signal transmission is shown by increasing the synaptic weight from 20 to 22.5 approximately, with the increasing scan rate from 100 to 400 mV/s. The increase in the scan rate resulted in the synaptic weight saturation, and a change in ionic conductance is observed at 0.7 and 0.2 V with varying pulse widths ∼10, 20, and 50 ms, having a 10 ms pulse interval. The spike time-dependent plasticity measurement is carried out for the symmetric and asymmetric Hebbian rule with 4 s pulse width at 1.2 and −1.2 V pulse amplitude. The device also showed ∼96% recognition characteristics, as estimated from retention loss characteristics. Thus, the present work emphasizes the utility of BiFeO3-based analogue devices for memristive neuromorphic computing devices.

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Bioinspired AlFeO₃ Memristor with Sensing, Storage, and Synaptic Functionalities

Ganaie,

Kumar,

Shringi

et al. 2024

Adv Funct Materials

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In conventional designs, sensory systems are segregated from memory and computing units. The conversion and transmission of data from analog sensing domains to digital storage result in inefficient power utilization and increased latency. Here, a multifunctional memristor capable of detecting gamma radiation while also serving as a data storage device and an artificial synapse is reported. Large‐scale integration of oxide‐based memristors for artificial neural networks faces major challenges due to the sneak‐path current issue in crossbar arrays. Consequently, material combinations and fabrication variables significantly shape nanoscale processes, which are essential in determining resistive switching properties and functionalities. Resistive switching in AlFeO3 is studied using different electrode materials (silver (Ag), gold (Au), chromium (Cr), fluorine‐doped tin oxide, and silicon), embedding metal (Ag, Au) nanocrystals to engineer a class of tunable memories capable of functioning as selector, memory, artificial synapse, and dosimeter. Techniques like electrode engineering, nanocrystal seeding, and temperature‐dependent thin film deposition are employed to tune resistive and threshold switching functionalities. Accessing different functionalities requires changing the electrode materials or changing the synthesis conditions of the AlFeO3 resistive switching layer and are not interconvertible in the same device simultaneously. The devices emulate critical neural functions and demonstrate interconversion dynamics between short‐term and long‐term plasticity.

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Oxygen Affinity of Metal Electrodes as Control Parameter in Tuning the Performance of Cu_xO‐Based Resistive Random Access Memory Devices

Cited by 6 publications

References 34 publications

Eradicating negative-Set behavior of TiO₂-based devices by inserting an oxygen vacancy rich zirconium oxide layer for data storage applications

Eradicating negative-Set behavior of TiO₂-based devices by inserting an oxygen vacancy rich zirconium oxide layer for data storage applications

Multifunctional BiFeO₃ Thin Film-Based Memristor Device as an Efficient Synapse: Potential for Beyond von Neumann Computing in Neuromorphic Systems

Bioinspired AlFeO₃ Memristor with Sensing, Storage, and Synaptic Functionalities

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Oxygen Affinity of Metal Electrodes as Control Parameter in Tuning the Performance of CuxO‐Based Resistive Random Access Memory Devices

Cited by 6 publications

References 34 publications

Eradicating negative-Set behavior of TiO2-based devices by inserting an oxygen vacancy rich zirconium oxide layer for data storage applications

Eradicating negative-Set behavior of TiO2-based devices by inserting an oxygen vacancy rich zirconium oxide layer for data storage applications

Multifunctional BiFeO3 Thin Film-Based Memristor Device as an Efficient Synapse: Potential for Beyond von Neumann Computing in Neuromorphic Systems

Bioinspired AlFeO3 Memristor with Sensing, Storage, and Synaptic Functionalities

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Oxygen Affinity of Metal Electrodes as Control Parameter in Tuning the Performance of Cu_xO‐Based Resistive Random Access Memory Devices

Eradicating negative-Set behavior of TiO₂-based devices by inserting an oxygen vacancy rich zirconium oxide layer for data storage applications

Eradicating negative-Set behavior of TiO₂-based devices by inserting an oxygen vacancy rich zirconium oxide layer for data storage applications

Multifunctional BiFeO₃ Thin Film-Based Memristor Device as an Efficient Synapse: Potential for Beyond von Neumann Computing in Neuromorphic Systems

Bioinspired AlFeO₃ Memristor with Sensing, Storage, and Synaptic Functionalities