Oxide Ultrathin Films in Sensor Applications

Brunet, E.; Mutinati, Giorgio C.; Steinhauer, Stephan; Köck, Anton

doi:10.1002/9783527640171.ch11

Cited by 2 publications

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References 107 publications

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“…Oxide thin films formed on metal surfaces play a pivotal role in diverse applications, , ranging from corrosion protection, wear resistance, and catalysis , to sensor technology . Copper surface oxides formed via Cu oxidation have been considered as a model system to understand the formation of metal oxides in general and have a broad impact in areas including electronic devices, photovoltaics, and various types of catalysis. , Partially oxidized Cu has exhibited marked activity in several industrial chemical processes, including the water–gas shift reaction, alcohol oxidation, and methanol reforming .…”

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confidence: 99%

Vacancy Ordering in Ultrathin Copper Oxide Films on Cu(111)

Zhu,

Huang,

Lin

et al. 2024

J. Am. Chem. Soc.

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Oxide thin films grown on metal surfaces have wide applications in catalysis and beyond owing to their unique surface structures compared to their bulk counterparts. Despite extensive studies, the atomic structures of copper surface oxides on Cu(111), commonly referred to as “44” and “29”, have remained elusive. In this work, we demonstrated an approach for the structural determination of oxide surfaces using element-specific scanning tunneling microscopy (STM) imaging enhanced by functionalized tips. This approach enabled us to resolve the atomic structures of “44” and “29” surface oxides, which were further corroborated by noncontact atomic force microscopy (nc-AFM) measurements and Monte Carlo (MC) simulations. The stoichiometry of the “44” and “29” frameworks was identified as Cu23O16 and Cu16O11, respectively. Contrary to the conventional hypothesis, we observed ordered Cu vacancies within the “44” structure manifesting as peanut-shaped cavities in the hexagonal lattice. Similarly, a combination of Cu and O vacancies within the “29” structure leads to bean-shaped cavities within the pentagonal lattice. Our study has thus resolved the decades-long controversy on the atomic structures of “44” and “29” surface oxides, advancing our understanding of copper oxidation processes and introducing a robust framework for the analysis of complex oxide surfaces.

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Section: Introductionmentioning

confidence: 99%

Vacancy Ordering in Ultrathin Copper Oxide Films on Cu(111)

Zhu,

Huang,

Lin

et al. 2024

J. Am. Chem. Soc.

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Electric-field-induced crossover of polarization reversal mechanisms in Al_1−xSc _x N ferroelectrics

et al. 2021

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Scandium-doped aluminum nitride, Al1−x Sc x N, represents a new class of displacive ferroelectric materials with high polarization and sharp hysteresis along with high-temperature resilience, facile synthesizability and compatibility with standard CMOS fabrication techniques. The fundamental physics behind the transformation of unswitchable piezoelectric AlN into switchable Al–Sc–N ferroelectrics depends upon important atomic properties such as local structure, dopant distributions and the presence of competing mechanism of polarization switching in the presence of an applied electric-field that have not been understood. We computationally synthesize Al1−x Sc x N to quantify the inhomogeneity of Sc distribution and phase segregation, and characterize its crystal and electronic structure as a function of Sc-doping. Nudged elastic band calculations of the potential energy surface and quantum molecular dynamics simulations of direct electric-field-driven ferroelectric switching reveal a crossover between two polarization reversal mechanisms—inhomogeneous nucleation-and-growth mechanism originating near Sc-rich regions in the limit of low applied fields and nucleation-limited-switching in the high-field regime. Understanding polarization reversal pathways for these two mechanisms as well as the role of local Sc concentration on activation barriers provides design rules to identify other combinations of dopant elements, such as Zr, Mg etc. to synthesize superior AlN-based ferroelectric materials.

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Oxide Ultrathin Films in Sensor Applications

Cited by 2 publications

References 107 publications

Vacancy Ordering in Ultrathin Copper Oxide Films on Cu(111)

Vacancy Ordering in Ultrathin Copper Oxide Films on Cu(111)

Electric-field-induced crossover of polarization reversal mechanisms in Al_1−xSc _x N ferroelectrics

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Oxide Ultrathin Films in Sensor Applications

Cited by 2 publications

References 107 publications

Vacancy Ordering in Ultrathin Copper Oxide Films on Cu(111)

Vacancy Ordering in Ultrathin Copper Oxide Films on Cu(111)

Electric-field-induced crossover of polarization reversal mechanisms in Al1−x Sc x N ferroelectrics

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Electric-field-induced crossover of polarization reversal mechanisms in Al_1−xSc _x N ferroelectrics