Oxide superconductors and ferroelectrics?Materials for a new generation of tunable microwave devices

Hermann, A. M.; Yandrofski, R. M.; Scott, J. F.; Naziripour, A.; Gerada, David; Price, John C.; Cuchario, J.; Ahrenkiel, R. K.

doi:10.1007/bf00724590

Cited by 40 publications

(9 citation statements)

References 5 publications

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“…Much of the recent interest in the properties and application of ferroelectric thin films at microwave frequencies can be traced back to the original work on the combination of ferroelectric and high temperature superconductor (HTS) films [1][2][3]. This, together with the realization in many research laboratories that pulsed laser deposition offered a flexible and rapid means of deposition of many materials [4,5] led to a rapid expansion of the field.…”

Section: Introductionmentioning

confidence: 99%

Dielectric characterization of a ferroelectric film in the sub-GHz region

Bao¹,

Jackson²,

Lancaster³

2008

J. Phys. D: Appl. Phys.

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A new method is proposed for the measurement of the dielectric properties of BaxSr1−xTiO3 (BST) thin films in the frequency range 106–1.8 × 109 Hz. A co-planar waveguide (CPW) transmission line was employed for impedance measurements via on-wafer probing. The measured impedance of the CPW line was found as a function of the probing position on the line. A simplified model of the CPW line under test allows the intrinsic dielectric properties of BST thin films to be extracted from the measured position-dependent impedance. Experimental results obtained by this new method agree well with those obtained by two-port S-parameters measurement at microwave frequencies using the same CPW structure.

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Section: Introductionmentioning

confidence: 99%

Dielectric characterization of a ferroelectric film in the sub-GHz region

Bao¹,

Jackson²,

Lancaster³

2008

J. Phys. D: Appl. Phys.

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“…The central challenge in tunable magnetic microwave devices lies in finding an energy efficient way to perform wide ferromagnetic resonance (FMR) tuning in a reversible and reproducible manner using a control voltage, rather than a current‐driven electromagnet 1–7. This requires the creation of novel materials and functionalities, while integrating into non‐volatile electronic devices 8–12.…”

mentioning

confidence: 99%

Voltage‐Impulse‐Induced Non‐Volatile Ferroelastic Switching of Ferromagnetic Resonance for Reconfigurable Magnetoelectric Microwave Devices

et al. 2013

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A critical challenge in realizing magnetoelectrics based on reconfigurable microwave devices, which is the ability to switch between distinct ferromagnetic resonances (FMR) in a stable, reversible and energy efficient manner, has been addressed. In particular, a voltage-impulse-induced two-step ferroelastic switching pathway can be used to in situ manipulate the magnetic anisotropy and enable non-volatile FMR tuning in FeCoB/PMN-PT (011) multiferroic heterostructures.

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“…Since the early 1960s, ferroelectrics have been explored for application in microwave devices and radar applications [2][3][4][5]. Their characteristics have been extensively recognized by several research groups around the world.…”

Section: Ferroelectric Tunable Microwave Componentsmentioning

confidence: 99%

Tunable Zeroth-Order Resonator Based on Ferroelectric Materials

Mansour¹,

Kanaya²

2021

Multifunctional Ferroelectric Materials

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Tunable microwave devices have the benefits of added functionality, smaller form factor, lower cost, and lightweight, and are in great demand for future communications and radar applications as they can extend the operation over a wide dynamic range. Current tunable technologies include several schemes such as ferrites, semiconductors, microelectromechanical systems (MEMS), and ferroelectric thin films. While each technology has its own pros and cons, ferroelectric thin film-based technology has proved itself as the potential candidate for tunable devices due to its simple processes, low power consumption, high power handling, small size, and fast tuning. A tunable Composite Right Left-Handed Zeroth Order Resonator (CRLH ZOR) is introduced in this chapter and it relies mainly on the latest advancement in the ferroelectric materials. It is common that for achieving optimum performance for the resonant structure, this involves the incorporation of an additional tuning by either mechanical means (i.e. with tuning screws) or other coupling mechanisms. The integration between electronic tuning and High-Temperature Superconducting (HTS) components yields a high system performance without degradation of efficiency. This leads not only low-loss microwave components that could be fine-tuned for maximum efficiency but will provide a tunable device over a broadband frequency spectrum as well. The dielectric properties of the ferroelectric thin film, and the thickness of the ferroelectric film, play a fundamental role in the frequency or phase tunability and the overall insertion loss of the circuit. The key advantages of using ferroelectric are the potential for significant size-reduction of the microwave components and systems and the cabibility for integration with microelectronic circuits due to the utilization of thin and thick ferroelectric film technology. In this chapter, ZOR is discussed and the conceptual operation is introduced. The ZOR is designed and simulated by the full-wave analysis software. The response is studied using electromagnetic characteristics with the applied electric field, ferroelectric thickness, and the operating temperature.

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Oxide superconductors and ferroelectrics?Materials for a new generation of tunable microwave devices

Cited by 40 publications

References 5 publications

Dielectric characterization of a ferroelectric film in the sub-GHz region

Dielectric characterization of a ferroelectric film in the sub-GHz region

Voltage‐Impulse‐Induced Non‐Volatile Ferroelastic Switching of Ferromagnetic Resonance for Reconfigurable Magnetoelectric Microwave Devices

Tunable Zeroth-Order Resonator Based on Ferroelectric Materials

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