Oxide‐Substrate and Oxide‐Oxide Chemical Reactions in Thermally Annealed Anodic Films on GaSb , GaAs , and GaP

Schwartz, G. P.; Gualtieri, G. J.; Thurmond, C. D.; Schwartz, B.

doi:10.1149/1.2129502

Cited by 118 publications

(37 citation statements)

References 33 publications

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“…At higher reaction tern eratures, significant amounts of As203 are also detected. The broad feature centered at 475 cm-is due to amorphous As20 3 [13]. This species, if present, is below the Raman detection level for oxidations performed at 400 and 425 "Cy but it is observed at relatively constant levels throughout the oxidation at 450 "C (Fig 2).…”

Section: Disc La1 M Ermentioning

confidence: 85%

Dynamics of Wet Oxidation of High-Al-Content III-V Materials

Ashby

1998

MRS Proc.

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Oxidation of layers of high-Al-content In-V materials by water vapor has become the enabling process for high-efficiency vertical cavity surface emitting lasers (VCSELs) and has potential applications for reducing substrate current leakage in GaAs-on-insulator (GOI) MESFETs. Because of the established importance of wet oxidation in optoelectronic devices and its potential applications in electronic devices, it has become increasingly important to understand the mechanism of wet oxidation and how it might be expected to affect both the fabrication and subsequent operation of devices that have been made using this technique. The mechanism of wet oxidation and the consequence of this mechanism for heterostructure design and ultimate device operation are discussed here.

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Section: Disc La1 M Ermentioning

confidence: 85%

Dynamics of Wet Oxidation of High-Al-Content III-V Materials

Ashby

1998

MRS Proc.

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“…(1), (2), and (4), the concentration of the chemisorbed Se as a function of the processing time is given by…”

Section: Langmuir-based Adsorptionmentioning

confidence: 99%

“…Air oxidation of GaSb leads to a thick overlayer of native oxide on the surface, along with a high concentration of elemental antimony. [2][3][4] As for most other III-V semiconductors, the high density of energy states within the band-gap region results in a large surface band bending and reduces a minority carrier lifetime. It is important to control the electronic structure and state density of the GaSb surface to increased control, reliability, and performance of electronic devices.…”

Section: Introductionmentioning

confidence: 99%

Modifications of the electronic structure of GaSb surface by chalcogen atoms: S, Se, and Te

Liu

Gokhale

Mavrikakis

et al. 2004

Journal of Applied Physics

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Modifications to the electronic properties and chemical structures of the GaSb surface using the chalcogen atoms S, Se, and Te were investigated theoretically and experimentally. A self-consistent density-functional theory study indicates that an adsorption of a full monolayer coverage of chalcogen atoms on a Ga-terminated surface reduces the density of gap region states significantly. A greater photoluminescence enhancement was observed from GaSb samples treated by chalcogenide (Na 2 S, Na 2 Se, or Na 2 Te) in a nonaqueous than in an aqueous passivation medium. X-ray photoelectron spectroscopy reveals a Ga-rich surface after a nonaqueous passivation, with sulfidization providing a higher concentration of Ga͑Sb͒-chalcogen bonds than does a passivation with Na 2 Se or Na 2 Te. The uptake of chalcogen during the passivation is accompanied by the loss of surface antimony. The formation of Sb-X(X = S, Se, or Te) bonds competes with X displacing surface Sb, which dominates Se or Te incorporation in the GaSb surface lattice. The passivation kinetics was analyzed on basis of a single precursor-mediated coverage-dependent chemisorption proces.

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“…5 However, the surface of GaSb is highly reactive and native oxide layers composed of GaO x and SbO x will form on GaSb surface immediately upon air exposure. 6,7 Ex-situ HCl treatment and in-situ high-temperature vacuum annealing (HT-VA) enable to remove native oxides from GaSb surface. However, HT-VA treatment results in rough GaSb surface due to the selective Sb desorption.…”

Section: Introductionmentioning

confidence: 99%

Surface cleaning and pure nitridation of GaSb by in-situ plasma processing

et al. 2017

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A clean and flat GaSb surface without native oxides has been attained by H2 plasma cleaning and subsequent in-situ N2 plasma nitridation process at 300 oC. The mechanisms of thermal desorption behavior of native oxides on GaSb have been studied by thermal desorption spectroscopy (TDS) analysis. The suitable heat treatment process window for preparing a clean GaSb surface is given. Auger electron spectroscopy (AES) analysis indicates that native oxides were completely removed on the GaSb surface after H2 plasma exposure and the pure nitridation of the clean GaSb surface was obtained at a relatively low temperature of 300 °C. This pure nitridation of GaSb have a possibility to be used as a passivation layer for high quality GaSb MOS devices.

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Oxide‐Substrate and Oxide‐Oxide Chemical Reactions in Thermally Annealed Anodic Films on GaSb , GaAs , and GaP

Cited by 118 publications

References 33 publications

Dynamics of Wet Oxidation of High-Al-Content III-V Materials

Dynamics of Wet Oxidation of High-Al-Content III-V Materials

Modifications of the electronic structure of GaSb surface by chalcogen atoms: S, Se, and Te

Surface cleaning and pure nitridation of GaSb by in-situ plasma processing

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