Oxide spin-orbitronics: spin-charge interconversion and topological spin textures

Trier, Felix; Noël, Paul; Kim, Joo-Von; Attané, Jean-Philippe; Vila, Laurent; Bibes, Manuel

doi:10.48550/arxiv.2103.16271

Cited by 3 publications

(3 citation statements)

References 186 publications

(239 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Oxide thin films are a topic of increasing research relevance owing to their potential applications in conventional electronics, spintronics and orbitronics (Bibes et al, 2011;Trier et al, 2021;Vaz et al, 2018). The properties of these films are very sensitive to their crystallographic structure.…”

Section: Introductionmentioning

confidence: 99%

Oxygen crystallographic positions in thin films by non-destructive resonant elastic X-ray scattering

Corredor¹,

Wendling²,

Preziosi³

et al. 2022

J Appl Cryst

View full text Add to dashboard Cite

Precisely locating oxygen atoms in nanosized systems is a real challenge. The traditional strategies used for bulk samples fail at probing samples with much less matter. Resonant elastic X-ray scattering (REXS) experiments in the X-ray absorption near-edge structure (XANES) domain have already proved their efficiency in probing transition metal cations in thin films, but it is not feasible to perform such experiments at the low-energy edges of lighter atoms – such as oxygen. In this study, the adequacy of using REXS in the extended X-ray absorption fine structure (EXAFS) domain, also known as extended diffraction absorption fine structure (EDAFS), to solve this issue is shown. The technique has been validated on a bulk FeV2O4 sample, through comparison with results obtained with conventional X-ray diffraction measurements. Subsequently, the positions of oxygen atoms in a thin film were unveiled by using the same strategy. The approach described in this study can henceforth be applied to solve the crystallographic structure of oxides, and will help in better understanding the properties and functionalities which are dictated by the positions of the oxygen atoms in functional nanosized materials.

show abstract

Section: Introductionmentioning

confidence: 99%

Oxygen crystallographic positions in thin films by non-destructive resonant elastic X-ray scattering

Corredor¹,

Wendling²,

Preziosi³

et al. 2022

J Appl Cryst

View full text Add to dashboard Cite

show abstract

“…The interconversion between spin and charge currents mediated by Rashba interactions 1 , observed in a wide range of systems (Ag/Bi interfaces 2 , SrTiO 3 two-dimensional electron gases (STO 2DEGs) [3][4][5][6][7][8] CoFeB/MgO 9 , Fe/Ge, α-Sn 2,10 ), offers huge technological opportunities from spin orbit torque and magnetic commutation to THz wave generation [11][12][13][14][15] . In Rashba systems, a flow of charge results in an out-of equilibrium spin density arising from the uncompensated spin-texture at the Fermi surfaces, the so-called Rashba-Edelstein effect (REE) [16][17][18] .…”

Section: Introductionmentioning

confidence: 99%

Spin to charge conversion at Rashba-split SrTiO$_3$ interfaces from resonant tunneling

To,

Dang,

Vila

et al. 2022

Preprint

View full text Add to dashboard Cite

Spin-charge interconversion is a very active direction in spintronics. Yet, the complex behaviour of some of the most promising systems such as SrTiO 3 (STO) interfaces is not fully understood. Here, on the basis of a 6-band k.p method combined with spin-resolved scattering theory, we give a theoretical demonstration of transverse spin-charge interconversion physics in STO Rashba interfaces. Calculations involve injection of spin current from a ferromagnetic contact by resonant tunneling into the native Rashba-split resonant levels of the STO triangular quantum well. We compute an asymmetric tunneling electronic transmission yielding a transverse charge current flowing in plane, with a dependence with gate voltage in a very good agreement with existing experimental data.

show abstract

“…Oxide heterostructures are also being heavily investigated for their spin-to-charge and charge-to-spin conversion efficiency [107,108] and the gate-tunable nature of the SO splitting in the 2D electron gas appearing at several interfaces [109,110], yet they remain so far a nearly uncharted territory for SARPES. Buried interfaces can be measured by photoemission only at the photon energy of some resonance with moderate resolution [111], while the Rashba splitting at bare surfaces is vanishingly small [112,113] and below the SARPES detection limits [113].…”

mentioning

confidence: 99%

Present and future trends in spin ARPES

Lin¹,

Moreschini²,

Lanzara³

2021

EPL

View full text Add to dashboard Cite

Spin-orbit (SO) coupling combined with space inversion symmetry breaking is at the origin of the lifting of the spin degeneracy in the band structure of many materials. The momentum-dependent energy splitting and the degree of spin polarization are indicative of the strength and symmetry of the SO interaction, and enter in the figure of merit of essentially all conceptual designs aiming to control the electron spin degree of freedom in solids. Here we briefly review the role played by spin-and-angle-resolved photoemission (spin ARPES or SARPES) in revealing the spin polarization specifically in the topological states of 3-dimensional (3D) topological insulators (TIs), and we discuss how the progress in the technique can assist the rise of several active fields like spintronics, spin-orbitronics or the generation of spin-polarized beams.

show abstract

Oxide spin-orbitronics: spin-charge interconversion and topological spin textures

Cited by 3 publications

References 186 publications

Oxygen crystallographic positions in thin films by non-destructive resonant elastic X-ray scattering

Oxygen crystallographic positions in thin films by non-destructive resonant elastic X-ray scattering

Spin to charge conversion at Rashba-split SrTiO$_3$ interfaces from resonant tunneling

Present and future trends in spin ARPES

Contact Info

Product

Resources

About