Oxide perovskite Ba2AgIO6 wafers for X-ray detection

Lone‐pair Electrons Enhancement Effect: SnTe3O8 Hard X‐ray Detection with Stable High‐temperature Sensitivity and Ultralow Detection Limit

“…Under the 10 000 V cm −1 electric field, the sensitivities of STO and TTO SCs X‐ray detectors in 120 keV hard X‐ray are larger than that of 40 keV X‐ray in Figure 4f, which indicates that STO and TTO SCs X‐ray detectors are suitable for 120 keV hard X‐ray detection. The sensitivity of 436 µC Gy air −1 cm −2 for STO SC X‐ray detector at room temperature is higher than that of GaN (0.17 µC Gy air −1 cm −2 ), [ 22 ] Ba 2 AgIO 6 (18.9 µC Gy air −1 cm −2 ), [ 23 ] β‐Ga 2 O 3 SC (66 µC Gy air −1 cm −2 ), β‐Ga 2 O 3 :Mg SC (338.9 µC Gy air −1 cm −2 ), [ 24 ] CABB SC (105 µC Gy air −1 cm −2 ), [ 18b ] MAPB SC (80 µC Gy air −1 cm −2 ) [ 25 ] and CZT (318 µC Gy air −1 cm −2 ) [ 26 ] in Figure 4i. Furthermore, the highest sensitivity of STO SC X‐ray detector is 21 times larger than that of the commercial α‐Se (20 µC Gy air −1 cm −2 ), [ 27 ] which indicates that STO SC X‐ray detector shows great applications in X‐ray detection.…”

Development of high-performance direct X-ray detector materials: from hybrid halide perovskites to all-inorganic lead-free perovskites

“…The X-ray detector was fabricated on the [001] plane of the Cs 3 Bi 2 I 9 single crystal, and the detector sensitivity was 111.9 μC Gy air −1 cm −2 . 174 Subsequently, researchers have successively prepared other new inorganic lead-free perovskite materials, such as Cs 2 TeI 6 , 175 Rb 3 Bi 2 I 9 , 176 Cs 3 Bi 2 Br 9 , 177 Ba 2 AgIO 6 , 178 Cs 3 MnI 5 , 179 Cs 2 AgBiCl 6 180 and Rb 4 Ag 2 BiBr 9 . 181 These systems have solved the problems of material stability and toxicity, but the performance of the detector is relatively low.…”

Thick-junction perovskite X-ray detectors: processing and optoelectronic considerations

“…16b Yang et al prepared Ba 2 AgIO 6 wafers through isostatic pressure and built X-ray detectors with Au/Ba 2 AgIO 6 wafer/Au photo-conductor structures. 17 In order to fabricate the devices with the read-out circuit on different substrates, Pan et al employed a hot-pressing method by melting CsPbBr 3 SC powders at high temperatures to fabricate thick quasi-monocrystalline CsPbBr 3 films on FTO substrates, and a record sensitivity of 55 684 μC Gy air −1 cm −2 was achieved (Fig. 2f ).…”