Oxide-mediated recovery of field-effect mobility in plasma-treated MoS
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Jadwiszczak, Jakub; O’Callaghan, Colin; Zhou, Yangbo; Fox, Daniel; Weitz, Eamonn; Keane, Darragh; Cullen, Conor P.; O'Reilly, Ian; Downing, Clive; Shmeliov, Aleksey; Maguire, Pierce; Gough, John J.; McGuinness, Cormac; Ferreira, M. S.; Bradley, A. Louise; Boland, John J.; Duesberg, Georg S.; Nicolosi, Valeria; Zhang, Hongzhou

doi:10.1126/sciadv.aao5031

Cited by 89 publications

(107 citation statements)

References 62 publications

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“…Jadwiszczak et al [133] exposed mechanically exfoliated MoS 2 few-layers to an O 2 -Ar plasma (O 2 :Ar = 1:3) for 2-28 s. The frequency of the plasma was 13.52 MHz. An oxide phase was generated under the plasma exposure, changing the electrical conductivity and carrier mobility of the 2D materials.…”

Section: Combinationmentioning

confidence: 99%

Recent Progress on Irradiation-Induced Defect Engineering of Two-Dimensional 2H-MoS2 Few Layers

et al. 2019

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Atom-thick two-dimensional materials usually possess unique properties compared to their bulk counterparts. Their properties are significantly affected by defects, which could be uncontrollably introduced by irradiation. The effects of electromagnetic irradiation and particle irradiation on 2H MoS 2 two-dimensional nanolayers are reviewed in this paper, covering heavy ions, protons, electrons, gamma rays, X-rays, ultraviolet light, terahertz, and infrared irradiation. Various defects in MoS 2 layers were created by the defect engineering. Here we focus on their influence on the structural, electronic, catalytic, and magnetic performance of the 2D materials. Additionally, irradiation-induced doping is discussed and involved.

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Section: Combinationmentioning

confidence: 99%

Recent Progress on Irradiation-Induced Defect Engineering of Two-Dimensional 2H-MoS2 Few Layers

et al. 2019

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“…29 With extensive chalcogen vacancy formation and subsequent oxidation, sub-stoichiometric MoO 3−x can exhibit metallic behavior since oxygen vacancies act as donor levels in MoO 3 . 30 In this work, cycles of hydrogen and atmospheric exposure (or oxygen plasma) are used to (1) create chalcogen vacancies in MoS 2 and then (2) oxidize the vacancies. MoS 2 is lithographically converted to MoO 3−x in a highly selective manner.…”

Section: Introductionmentioning

confidence: 99%

Lithographically patterned metallic conduction in single-layer MoS2 via plasma processing

et al. 2019

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Tailoring the electrical transport properties of two-dimensional transition metal dichalcogenides can enable the formation of atomically thin circuits. In this work, cyclic hydrogen and oxygen plasma exposures are utilized to introduce defects and oxidize MoS 2 in a controlled manner. This results in the formation of sub-stochiometric MoO 3−x , which transforms the semiconducting behavior to metallic conduction. To demonstrate functionality, single flakes of MoS 2 were lithographically oxidized using electron beam lithography and subsequent plasma exposures. This enabled the formation of atomically thin inverters from a single flake of MoS 2 , which represents an advancement toward atomically thin circuitry.

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“…The XPS measurement identified that the synthesized WSe 2 and MoS 2 wires consist of semiconducting 2H phase without mixing with 1T phase . In the spectrum of Mo, we did not observe any distinct signal for the Mo 6+ 3d 3/2 orbital located between 234 and 238 eV, which would be associated with the presence of oxidization or selenization of Mo atoms . This suggests that the inner MoS 2 was not deteriorated during the thermal‐decomposition step for WSe 2 synthesis.…”

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confidence: 68%

Direct Synthesis of a Self‐Assembled WSe₂/MoS₂ Heterostructure Array and its Optoelectrical Properties

et al. 2019

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Tremendous progress has been made in the investigation of 2D layered van der Waals (vdW) materials, which provide unique platforms for discovering fundamental condensed-matter phenomena. [1][2][3] In particular, heterostructures constructed from transition-metal dichalcogenides (TMD) have attracted considerable interest in the fields of physics and chemistry and for practical applications because they offer tunability of the properties, such as the band offset, carrier density, and polarity. [4][5][6][7][8] Several strategies for producing TMD-based heterostructures comprising semiconductor-semiconductor or metal-semiconductor junctions have been reported. [9][10][11] The first demonstrated TMD-based p-n junction was achieved via the mechanical stacking of microsized flakes. [4,5,12] Although the stacking method is a convenient approach for forming high-quality heterostructures for fundamental research, it relies on the probability of cleaving the bulk crystal, limiting the valuable area. For overcoming this limitation, chemical vapor deposition (CVD) has been recognized as a promising technique for forming a functional heterojunction, which can achieve not only high crystallinity but also direct synthesis of heterointerfaces with an atomically sharp boundary. [13][14][15][16][17] These TMD-based heterojunctions are pioneering advances in the fields of p-n diodes, light emitters, photodetectors, and field-effect transistors. [5][6][7][18][19][20][21][22][23] Despite such progress, it is still a grand challenging task to demonstrate the array of a hierarchical organization of the heterostructure with a controlled structure and spatial position. [24,25] In particular, the cross-aligned 1D matrix is considered as an ideal architecture for future electronics, as it significantly enhances device array integration in a limited space. [26][27][28] However, i) the complicated fabrication process involving high-temperature CVD that induces cross-contamination and ii) the unavoidable production of residues during the patterning process for defining the junction are critical hurdles for integrating the TMD heterostructure array on a large scale. [29] Recently, a novel solution-based approach has been exploited for synthesizing high-quality 2D TMD films, which is a simple and inexpensive method to control the number of layers and implement diverse structures. [30][31][32][33] Moreover, it can yield Functional van der Waals heterojunctions of transition metal dichalcogenides are emerging as a potential candidate for the basis of next-generation logic devices and optoelectronics. However, the complexity of synthesis processes so far has delayed the successful integration of the heterostructure device array within a large scale, which is necessary for practical applications. Here, a direct synthesis method is introduced to fabricate an array of self-assembled WSe 2 /MoS 2 heterostructures through facile solutionbased directional precipitation. By manipulating the internal convection flow (i.e., Marangoni flow) of the solution, ...

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Oxide-mediated recovery of field-effect mobility in plasma-treated MoS ₂

Abstract: Time-controlled plasma treatment of MoS2 FETs improves carrier transport due to the presence of a two-dimensional oxide phase.

Cited by 89 publications

References 62 publications

Recent Progress on Irradiation-Induced Defect Engineering of Two-Dimensional 2H-MoS2 Few Layers

Recent Progress on Irradiation-Induced Defect Engineering of Two-Dimensional 2H-MoS2 Few Layers

Lithographically patterned metallic conduction in single-layer MoS2 via plasma processing

Direct Synthesis of a Self‐Assembled WSe₂/MoS₂ Heterostructure Array and its Optoelectrical Properties

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Oxide-mediated recovery of field-effect mobility in plasma-treated MoS 2

Abstract: Time-controlled plasma treatment of MoS2 FETs improves carrier transport due to the presence of a two-dimensional oxide phase.

Cited by 89 publications

References 62 publications

Recent Progress on Irradiation-Induced Defect Engineering of Two-Dimensional 2H-MoS2 Few Layers

Recent Progress on Irradiation-Induced Defect Engineering of Two-Dimensional 2H-MoS2 Few Layers

Lithographically patterned metallic conduction in single-layer MoS2 via plasma processing

Direct Synthesis of a Self‐Assembled WSe2/MoS2 Heterostructure Array and its Optoelectrical Properties

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Oxide-mediated recovery of field-effect mobility in plasma-treated MoS ₂

Direct Synthesis of a Self‐Assembled WSe₂/MoS₂ Heterostructure Array and its Optoelectrical Properties