Oxide growth retardation induced by rapid thermal annealing in Czochralsky-grown silicon consequence on the efficiency and the stability of internal gettering of Cr

Enhancement of microelectronic device performances by photothermal annealing under SiCl4 ambient

“…The minority carrier diffusion lengths (L d ) are dramatically affected with this undesirable impurity. Gettering processes, such as internal gettering by oxygen precipitation [1], phosphorus-gettering [2] and aluminium-gettering [3], are usually required to improve the electrical properties of the material. Later, it has been established that layers of porous silicon treated at high temperatures allow an efficient reduction of defects and contaminant concentrations in crystalline silicon wafers [4].…”