“…Used for the study of proton irradiation effect on diffusion and growth in Zr oxides, the differentiation of the 18 O distribution in and around sub-μm crack tips in the oxide layer and diffusion analysis were achieved. 28…”
Section: Resultsmentioning
confidence: 99%
“…Used for the study of proton irradiation effect on diffusion and growth in Zr oxides, the differentiation of the 18 O distribution in and around sub-mm crack tips in the oxide layer and diffusion analysis were achieved. 28 Furthermore, it can be applied to single measurements in a larger eld of view, keeping in mind that, due to the inhomogeneity of the brightness of the primary beam, some portion of the centre of the crater gets removed at a higher rate than the outside. This is notably critical when high current intensities are used for the pre-sputtering/implantation.…”
Section: Advantages Of the Dynamic Implantation Processmentioning
An improved “dynamic implantation” method enables SIMS analysis of large areas without gaps or accruing edge effects, after a homogeneous pre-sputtering/implantation phase during which the sample stage is continuously moved.
“…Used for the study of proton irradiation effect on diffusion and growth in Zr oxides, the differentiation of the 18 O distribution in and around sub-μm crack tips in the oxide layer and diffusion analysis were achieved. 28…”
Section: Resultsmentioning
confidence: 99%
“…Used for the study of proton irradiation effect on diffusion and growth in Zr oxides, the differentiation of the 18 O distribution in and around sub-mm crack tips in the oxide layer and diffusion analysis were achieved. 28 Furthermore, it can be applied to single measurements in a larger eld of view, keeping in mind that, due to the inhomogeneity of the brightness of the primary beam, some portion of the centre of the crater gets removed at a higher rate than the outside. This is notably critical when high current intensities are used for the pre-sputtering/implantation.…”
Section: Advantages Of the Dynamic Implantation Processmentioning
An improved “dynamic implantation” method enables SIMS analysis of large areas without gaps or accruing edge effects, after a homogeneous pre-sputtering/implantation phase during which the sample stage is continuously moved.
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