Oxide Formation on Si(100)-2×1 Surfaces Studied by   Scanning Tunneling   Microscopy/Scanning Tunneling Spectroscopy

Ikegami, Hiroshi; Ohmori, Kenji; Ikeda, Hiroya; Iwano, Hirotaka; Zaima, Shigeaki; Yasuda, Yukio

doi:10.1143/jjap.35.1593

Cited by 57 publications

(30 citation statements)

References 2 publications

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“…The oxidation of Si(1 0 0) leads furthermore to the appearance of bright protrusions, observed as such at both positive and negative bias [26,27]. The apparent height of the bright protrusions has been reported to be 1.4 Å [27], in good agreement with the 1.5 Å found in the present study.…”

Section: Discussionsupporting

confidence: 92%

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Initial stages of ZrO2 chemical vapor deposition on Si(100)-(2×1) from zirconium tetra-tert-butoxide

et al. 2008

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Section: Discussionsupporting

confidence: 92%

“…The most straightforward explanation is therefore that the dark patches (labelled E in Fig. 1b) SiO x gives rise to dark patches following the high symmetry directions [25][26][27]. These patches appear as depressions at both positive and negative bias.…”

Section: Discussionmentioning

confidence: 99%

Initial stages of ZrO2 chemical vapor deposition on Si(100)-(2×1) from zirconium tetra-tert-butoxide

et al. 2008

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“…STM studies of ultrathin silica films on Si wafers reported very similar bias conditions to image the silica oxide layer. 20,21 In addition, it has been found in this study that a sample bias higher than ϩ6 V…”

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confidence: 48%

Morphological and electronic properties of ultrathin crystalline silica epilayers on a Mo(112) substrate

et al. 2002

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Ultrathin crystalline silica layers grown on a Mo͑112͒ substrate have been shown to be a useful silica model oxide support in surface science model catalyst studies. As the oxide support material plays an important role in the catalytic process, a multitechnique surface science study is presented to characterize the morphological and electronic properties of the heteroepitaxial system SiO 2 /Mo(112). The long-range order of the silica epilayer which grows commensurate with a c(2ϫ2) surface unit mesh on the Mo͑112͒ substrate is studied by low-energy electron diffraction ͑LEED͒. The defect structure of the silica epilayer is characterized in a spot profile analysis ͑SPA͒-LEED study. Antiphase domain boundaries split the silica epilayer into an array of silica crystal grains whose average size and shape is determined. Aiming to prepare flat silica surfaces, the change in the surface roughness with progress in the film preparation is monitored in a combined SPA-LEED and scanning tunneling microscopy ͑STM͒ study and seen to influence also the Si-O stretching frequency in the infrared-reflection-absorption spectroscopy spectra. In STM images of the final silica film an average surface roughness of about 1 Å is detected. It is possible to visualize the silica film unit cell periodicity. A combined anger electron spectroscopy and ultraviolet photoelectron spectroscopy valence band study confirms the silica film stoichiometry and the growth of a 4:2 coordinated silica polymorph on the Mo͑112͒ surface. These various surface science studies allow us to propose models for the growth and structure of the silica epilayer on the Mo͑112͒ surface.

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“…To obtain ⌬ for bulk Si(100)2ϫ1, we first measured the square conductance G 2ϫ1 (T) of the n-type bulk Si(100)2ϫ1 sample in UHV from TϷ120 K to 300 K. Next, we saturated the clean Si(100)2ϫ1 surface with O 2 at RT. This procedure destroys the reconstruction ͑as evidenced by a 1ϫ1 LEED pattern͒, eliminates the surface states, 21 and creates a flat-band surface according to band bending measurements with Si 2p core level spectroscopy. 22 The conductance of the oxidized sample G O 2 was then measured from 120 K to 300 K and we obtained ⌬(T)ϭG 2ϫ1 (T) ϪG O 2 (T).…”

Section: Methodsmentioning

confidence: 99%

Electrical conductance of reconstructed silicon surfaces

Yoo

Weitering

2002

Phys. Rev. B

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The electrical conductance of atomically clean, reconstructed silicon surfaces was studied as a function of temperature with macroscopic van der Pauw measurements in ultrahigh vacuum. The surface-state conductance of the Si(100)2ϫ1 surface was measured on a fully depleted silicon-on-insulator ͑SOI͒ substrate and on bulk Si. The surface-state conductance has metallic temperature dependence, but its magnitude falls below the universal conductance quantum. The data furthermore reveal a clear signature of the c(4ϫ2)→2ϫ1 surface phase transition near 200 K, which indicates that surface scattering increases with decreasing c(4ϫ2) order on the surface. The surface conductance of Si(111)7ϫ7 was measured only on a SOI substrate. The temperature coefficient is metallic and the magnitude is larger than the universal conductance quantum.

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Oxide Formation on Si(100)-2×1 Surfaces Studied by Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy

Cited by 57 publications

References 2 publications

Initial stages of ZrO2 chemical vapor deposition on Si(100)-(2×1) from zirconium tetra-tert-butoxide

Initial stages of ZrO2 chemical vapor deposition on Si(100)-(2×1) from zirconium tetra-tert-butoxide

Morphological and electronic properties of ultrathin crystalline silica epilayers on a Mo(112) substrate

Electrical conductance of reconstructed silicon surfaces

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