Oxide crystal growth using gas lasers

Gasson, D. B.; Cockayne, B.

doi:10.1007/bf00554627

Cited by 85 publications

(30 citation statements)

References 4 publications

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“…Earlier attempts with the Verneuil-method [9], the floating zone technique [10], the laser-heated pedestal growth (LPHG) [11], and very recently the growth of Tm:Y 2 O 3 by the micro-pullingdown technique [12] resulted in crystals limited in size and quality. Another promising alternative for the preparation of sesquioxides is the fabrication of ceramic laser materials, which has been studied intensely [13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Crystal growth by the heat exchanger method, spectroscopic characterization and laser operation of high-purity Yb:Lu2O3

Peters

Kränkel

Petermann

et al. 2008

Journal of Crystal Growth

103

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Section: Introductionmentioning

confidence: 99%

Crystal growth by the heat exchanger method, spectroscopic characterization and laser operation of high-purity Yb:Lu2O3

Peters

Kränkel

Petermann

et al. 2008

Journal of Crystal Growth

103

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“…Sc 2 O 3 melts above 2450 1C limiting the suitable growth techniques. Czochralski, electrochemical, flux, laser-heated pedestal and optical floating zone methods have thus far failed to produce crystals of suitable size and quality [8][9][10][11][12]. The heat exchanger method has shown the most promise, but these crystals are subject to rhenium incorporation from the growth crucible in this highly specialized technique [13].…”

Section: Introductionmentioning

confidence: 95%

Hydrothermal single crystal growth of Sc2O3 and lanthanide-doped Sc2O3

McMillen

Kolis

2008

Journal of Crystal Growth

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“…Laser heating was first used for crystal growth by Eickhoff and Gurs [58] for the Float-Zone growth of ruby, and soon afterwards by Gasson and Cockayne [59] for other oxides. It is an ideal heat source because it can be tightly focused directly onto the sample with a beam size comparable with fiber dimensions (which may vary from a few microns to several mm), can be used in ambient, inert, reactive, or vacuum atmospheres and is available in power levels which can readily melt any known material whose dimensions are of the order of the beam size.…”

Section: Single Crystal Fibersmentioning

confidence: 99%

Growth of Shaped Crystals

Feigelson

1989

Crystal Growth in Science and Technology

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Shaped crystal growth refers to the growth of single crystals with a predetermined cross sectional configuration designed for a specific application. The quest to develop such techniques has been driven by the need to minimize costs associated with device fabrication such as cutting or polishing, the loss of expensive materials during these fabrication processes, and the damage created by machining processes.Perhaps the first intentionally shaped crystals were the metal filaments grown by Von Gomperz [1] in Germany in 1922 through a hole in a mica plate positioned on the melt surface. In 1938, Stepanov [2] in the USSR, began studies on the growth of shaped crystals using mechanical means to control the forces of surface tension. In his approach, the melt column was crystallized outside of the container by inserting wettable or nonwettable dies of different shapes into the melt.In the United States, work on growing sapphire filaments and single crystal superalloy jet engine turbine blades began in the late 1960's [3,4]. The former led several years later to the development of the EdgeDefined Film Growth Process (EFG) [5] for the production of sapphire tubes, filaments, ribbons and other shapes for special purposes. The EFG process (which is similar to the Stepanov method) and the unidirectional casting method for single crystal turbine blades were the first shaped crystal growth methods to find practical commercial applications.Aside from these two applications, shaped crystal growth technology would probably have remained a laboratory curiosity were it not for the energy crisis in the mid-seventies and the emergence of an urgent need to produce high quality silicon for solar cell applications. The cost of producing silicon single crystals had to be reduced dramatically to make these devices competitive with other energy sources. Increased growth rates compared with conventional methods and reduction in machining costs and material losses were necessary. Development of production methods for the preparation of high quality single crystal silicon ribbon at very high growth velocities was therefore a highly desirable approach to minimize fabrication costs. As a result, existing methods such as the Stepanov, EFG, and Dendritic Web Processes were studied for this application, and 275 H. Arend et al. (eds.), Crystal Growth in Science and Technology

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Oxide crystal growth using gas lasers

Cited by 85 publications

References 4 publications

Crystal growth by the heat exchanger method, spectroscopic characterization and laser operation of high-purity Yb:Lu2O3

Crystal growth by the heat exchanger method, spectroscopic characterization and laser operation of high-purity Yb:Lu2O3

Hydrothermal single crystal growth of Sc2O3 and lanthanide-doped Sc2O3

Growth of Shaped Crystals

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