Oxide-confined 850 nm VCSELs operating at bit rates up to 40 Gbit/s

Blokhin, S. A.; Lott, James A.; Mutig, A.; Fiol, G.; Ledentsov, N. N.; Maximov, M. V.; Nadtochiy, A. M.; Shchukin, V. A.; Bimberg, D.

doi:10.1049/el.2009.0552

Cited by 123 publications

(53 citation statements)

References 4 publications

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“…Использованный подход к решению проблемы паразитного RC-фильтра позволил повысить эффективность модуляции Письма в ЖТФ, 2018, том 44, вып. 1 лазера СВЧ-сигналом и реализовать безошибочную передачу данных на скорости 38 Gbit/s [12].…”

Section: дифференциальное усиление активной областиunclassified

“…В случае ВИЛ спектрального диапазона 850 nm потребовалось значительно больше времени для преодоления рубежа 35 Gbit/s: в 2008 г. сначала была достигнута скорость 25 Gbit/s на канал c использованием ВИЛ на основе квантовых ям InGaAs с оксидной токовой апертурой 9 µm [9], а затем для ВИЛ на основе квантовых ям GaAs с оксидной токовой апертурой 6 µm была получена скорость 30 Gbit/s [10]. В 2009 году для ВИЛ на основе квантовых ям InGaAs спектрального диапазона 850 nm с оксидной токовой апертурой 9 µm последовательно была продемонстрирована скорость передачи данных 32 [11] и 38 Gbit/s [12]. Наконец, рубеж в 40 Gbit/s был преодолен в 2011 г. с использованием ВИЛ на основе квантовых ям InGaAs спектрального диапазона 850 nm с оксидной токовой апертурой 7 µm [13].…”

Section: Introductionunclassified

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Высокоскоростные Полупроводниковые Вертикально-Излучающие Лазеры Для Оптических Систем Передачи Данных (Обзор)

Блохин¹,

Малеев²,

Бобров³

et al. 2018

Письма В Журнал Технической Физики

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The main problems of providing a high-speed operation semiconductor lasers with a vertical microcavity (so-called “vertical-cavity surface-emitting lasers”) under amplitude modulation and ways to solve them have been considered. The influence of the internal properties of the radiating active region and the electrical parasitic elements of the equivalent circuit of lasers are discussed. An overview of approaches that lead to an increase of the cutoff parasitic frequency, an increase of the differential gain of the active region, the possibility of the management of mode emission composition and the lifetime of photons in the optical microcavities, and reduction of the influence of thermal effects have been presented. The achieved level of modulation bandwidth of ∼30 GHz is close to the maximum achievable for the classical scheme of the direct-current modulation, which makes it necessary to use a multilevel modulation format to further increase the information capacity of optical channels constructed on the basis of vertical-cavity surface-emitting lasers.

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Section: дифференциальное усиление активной областиunclassified

Section: Introductionunclassified

Высокоскоростные Полупроводниковые Вертикально-Излучающие Лазеры Для Оптических Систем Передачи Данных (Обзор)

Блохин¹,

Малеев²,

Бобров³

et al. 2018

Письма В Журнал Технической Физики

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“…For shorter optical interconnects with moderate data rates in the range of 5 to 10 Gbit/s, direct-modulated VCSELs are used. On the research level, repetition rates of up to 20 GHz have been reached using direct modulation [Blo09], but these devices are not yet commercially available. Further speed increases prove to be demanding due to the fact that the modulation speed increase of conventional current-modulated VCSELs requires a roughly quadratic increase in the VCSEL current density j for linear repetition rate f r increase.…”

Section: Chaptermentioning

confidence: 99%

“…Figure 7.4). For device operation, the EOM VCSELs were mounted onto a copper heat sink and operated at RT as detailed in [Blo09]. In parallel to the optical output power of the laser, the electric photocurrent generated within the EOM section was recorded.…”

Section: Processing and Characterizationmentioning

confidence: 99%

Design and Realization of Novel GaAs Based Laser Concepts

Germann

2012

Springer Theses

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ZusammenfassungHalbleiterlaser stellen die Grundlage für eine zunehmende Vielzahl von Anwendungen dar, die von der Informationsspeicherung und digitalen Kommunikation bis hin zur Materialbearbeitung reichen. Neuartige Konzepte überwinden bisherige Limitierungen und erschließen neue Anwendungsgebiete. Viele dieser Anwendungsgebiete verlangen nach kostengünstigen Bauelementen, die maximale Brillanz und hohe Ausgangsleistungen oder höchste Geschwindigkeiten erreichen.Diese Arbeit stellt dar, wie essentielle Leistungsmerkmale von Halbleiterlasern durch das Design von Nanostrukturen und epitaktischen Wachstumsprozessen maßgeschneidert werden können. Hierbei wird auf alle Schritte der Laserherstellung eingegangen, vom Design über das Wachstum der Nanostrukturen mittels metallorganischer Gasphasenepitaxie (MOVPE), bis hin zur Herstellung und Charakterisierung kompletter Bauelemente. AbstractSemiconductor lasers represent the backbone for an increasing variety of applications ranging from information storage and communication, to material treatment. Novel concepts are pushing the limits and are enabling new application areas. Many of these areas demand low-cost laser devices with high-brilliance and high-power light output or high-speed performance.This thesis demonstrates how key performance characteristics of semiconductor lasers can be tailored using nanostructure design and epitaxial growth. All aspects of laser fabrication are discussed, from design to growth of nanostructures using metal-organic vapor-phase epitaxy (MOVPE), to fabrication and characterization of complete devices. By employing industrial tools, all developed processes are compatible with mass production.Pulsed high power laser operation up to 8 W and a ultra-low lasing threshold of 66 A/cm 2 is achieved with electrically pumped quantum dots (QD)-based edge emitters at 1.25 µm due to an improved understanding of the QD growth process. This novel process enables 1.3 µm edge emitters for telecom applications in the established InGaAs/GaAs system. At the heart of these achievements is the careful investigation and optimization of nearly all layers of the laser device structure. Designs are altered and precisely tuned by employing AlGaAs or InGaP claddings and varied doping schemes in order to develop new waveguides to meet different requirements.High-power vertical external-cavity surface-emitting lasers (VECSELs) promise continuous-wave (CW) lasing with perfect circular beam quality, plus direct access to the cavity. While the concept is ideal for a multitude of applications, conventional quantumwell based systems exhibit problematic temperature sensitivity during operation. Here, for the first time, VECSELs with sub-monolayer structures and QDs as active layers are realized by MOVPE. These optically pumped devices cover a wide spectral range from 950 nm to 1210 nm, and achieve excellent temperature-stable CW lasing due to the use of QDs and CW output powers of up to 1.4 W.In order to overcome the physical limitations of directly modulated vertical-c...

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“…Another salient advantage of VCSELs is their high yield which is associated to their small size (20,000 VCSELs can be grown on a 3-inch wafer) and capability for testing at the wafer level before dicing and packaging. Multi-mode VCSELs emitting at 850 nm find broad commercial application, representing the most mature and ubiquitous technology in the sector [3] [4]. Meanwhile long-wavelength VCSELs have been identified as a reasonable migration step, offering improved energy efficiency and higher modulation speeds with the same reliability [3] [6].…”

Section: Introductionmentioning

confidence: 99%

Photonic integration enabling new multiplexing concepts in optical board-to-board and rack-to-rack interconnects

Apostolopoulos

Bakopoulos

Kalavrouziotis

et al. 2014

Optical Interconnects XIV

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New broadband applications are causing the datacenters to proliferate, raising the bar for higher interconnection speeds. So far, optical board-to-board and rack-to-rack interconnects relied primarily on low-cost commodity optical components assembled in a single package. Although this concept proved successful in the first generations of opticalinterconnect modules, scalability is a daunting issue as signaling rates extend beyond 25 Gb/s. In this paper we present our work towards the development of two technology platforms for migration beyond Infiniband enhanced data rate (EDR), introducing new concepts in board-to-board and rack-to-rack interconnects.The first platform is developed in the framework of MIRAGE European project and relies on proven VCSEL technology, exploiting the inherent cost, yield, reliability and power consumption advantages of VCSELs. Wavelength multiplexing, PAM-4 modulation and multi-core fiber (MCF) multiplexing are introduced by combining VCSELs with integrated Si and glass photonics as well as BiCMOS electronics. An in-plane MCF-to-SOI interface is demonstrated, allowing coupling from the MCF cores to 340x400 nm Si waveguides. Development of a low-power VCSEL driver with integrated feed-forward equalizer is reported, allowing PAM-4 modulation of a bandwidth-limited VCSEL beyond 25 Gbaud.The second platform, developed within the frames of the European project PHOXTROT, considers the use of modulation formats of increased complexity in the context of optical interconnects. Powered by the evolution of DSP technology and towards an integration path between inter and intra datacenter traffic, this platform investigates optical interconnection system concepts capable to support 16QAM 40GBd data traffic, exploiting the advancements of silicon and polymer technologies.

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Oxide-confined 850 nm VCSELs operating at bit rates up to 40 Gbit/s

Cited by 123 publications

References 4 publications

Высокоскоростные Полупроводниковые Вертикально-Излучающие Лазеры Для Оптических Систем Передачи Данных (Обзор)

Высокоскоростные Полупроводниковые Вертикально-Излучающие Лазеры Для Оптических Систем Передачи Данных (Обзор)

Design and Realization of Novel GaAs Based Laser Concepts

Photonic integration enabling new multiplexing concepts in optical board-to-board and rack-to-rack interconnects

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