Oxide bipolar electronics: materials, devices and circuits

Grundmann, Marius; Klupfel, F. J.; Karsthof, Robert; Schlupp, Peter; Schein, Friedrich-Leonhard; Splith, Daniel; Yang, Chan; Bitter, Sofie; Wenckstern, Holger von

doi:10.1088/0022-3727/49/21/213001

Cited by 88 publications

(65 citation statements)

References 236 publications

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“…ZnO was investigated as alternative material but the lack of p‐type conduction lead to unipolar device applications only . Bipolar devices comprising ZnO require heterostructures . In recent years, semiconducting oxides with much larger band gap came into focus; first and foremost gallium oxide and its related alloys for which growth methods for bulk single crystals are available .…”

Section: Introductionmentioning

confidence: 99%

Electrical Properties of Vertical p‐NiO/n‐Ga₂O₃ and p‐ZnCo₂O₄/n‐Ga₂O₃ pn‐Heterodiodes

Schlupp

Splith

Wenckstern

et al. 2019

Physica Status Solidi (a)

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Vertical β-Ga 2 O 3 -based pn-heterostructures are investigated by currentvoltage measurements and thermal admittance spectroscopy. The β-Ga 2 O 3 thin films are grown by pulsed laser deposition (PLD) on (00.1)ZnO:Ga/(11.0) Al 2 O 3 substrates at 670 C. Two different p-type oxides are used to fabricate pn-heterodiodes which are investigated with respect to rectification, temperature stability, and breakdown behavior. For that, p-NiO and p-ZnCo 2 O 4 are grown by PLD at room temperature on top of a β-Ga 2 O 3 thin film, respectively. The rectification ratio at room temperature is about nine orders of magnitude, the ideality factor is about 2 and the on-resistance is below 1 Ω cm 2 . Both diode types did not show degradation for temperatures up to 100 C. Thermal admittance spectroscopy revealed defects in β-Ga 2 O 3 with thermal activation energy E a of about 200 meV for both diode types. Additionally, a level with E a % 240 meV is detected for the NiO/Ga 2 O 3 diodes only. In general, both diode types are suited to realize pn-heterodiodes with high rectification, but NiO is especially interesting for defect characterization by deep-level optical spectroscopy due to its transparency up to about 3.7 eV.

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Section: Introductionmentioning

confidence: 99%

Electrical Properties of Vertical p‐NiO/n‐Ga₂O₃ and p‐ZnCo₂O₄/n‐Ga₂O₃ pn‐Heterodiodes

Schlupp

Splith

Wenckstern

et al. 2019

Physica Status Solidi (a)

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“…For active applications, the combination of p-and n-type transparent semiconductors contributes to the science and technology field of transparent electronics (1,2). Commonly used TCs are n-type wide-bandgap semiconductors including In 2 O 3 , SnO 2 , ZnO, GaN, and their highly doped versions.…”

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confidence: 99%

Room-temperature synthesized copper iodide thin film as degenerate p-type transparent conductor with a boosted figure of merit

Yang

Kneiβ

Lorenz

et al. 2016

Proc. Natl. Acad. Sci. U.S.A.

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A degenerate p-type conduction of cuprous iodide (CuI) thin films is achieved at the iodine-rich growth condition, allowing for the record high room-temperature conductivity of ∼156 S/cm for asdeposited CuI and ∼283 S/cm for I-doped CuI. At the same time, the films appear clear and exhibit a high transmission of 60-85% in the visible spectral range. The realization of such simultaneously high conductivity and transparency boosts the figure of merit of a p-type TC: its value jumps from ∼200 to ∼17,000 MΩ −1 . Polycrystalline CuI thin films were deposited at room temperature by reactive sputtering. Their electrical and optical properties are examined relative to other p-type transparent conductors. The transport properties of CuI thin films were investigated by temperature-dependent conductivity measurements, which reveal a semiconductor-metal transition depending on the iodine/argon ratio in the sputtering gas.copper iodide thin film | p-type transparent conductor | figure of merit | reactive sputtering | room-temperature growth

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“…As indicated by Wilson, many of the important semiconductors are oxides, and their initial investigation dates from the beginning of the last century . Both the binary and ternary oxide semiconductors have been popular materials for technological applications in many fields, especially for the devices needing high mobility and high‐quality switching properties . Various oxides, such as ZnO, MgZnO, SnO 2 and In 2 O 3 :Sn (ITO), are becoming the mainstreams in photodetectors (PDs), transistors, Schottky diodes, solar cells, and resistive random access memories (RRAMs) .…”

Section: Introductionmentioning

confidence: 99%

“…Both the binary and ternary oxide semiconductors have been popular materials for technological applications in many fields, especially for the devices needing high mobility and high‐quality switching properties . Various oxides, such as ZnO, MgZnO, SnO 2 and In 2 O 3 :Sn (ITO), are becoming the mainstreams in photodetectors (PDs), transistors, Schottky diodes, solar cells, and resistive random access memories (RRAMs) . In addition, the high‐quality oxide films obtained in the form of oxide/metal/oxide (OMO) sandwich multilayer structures are the excellent candidates working as transparent conducting electrodes (TCEs) in light‐emitting diodes (LEDs) and flat‐panel displays .…”

Section: Introductionmentioning

confidence: 99%

Rectifying Effect of the Sr₃Al₂O₆/Ga₂O₃ Heterojunction

Liu

Wang

Zhi

et al. 2019

Physica Status Solidi (a)

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Oxide semiconductors, including binary and ternary oxides, are promising to be utilized as active layers in electronics. The heterojunctions based on oxides exhibit many attractive physical and structural properties and are preferably used to fabricate devices. Herein, Sr 3 Al 2 O 6 /Ga 2 O 3 heterojunction is fabricated using radiofrequency magnetron sputtering on silicon substrate, which shows an enhanced current-voltage characteristic under the 254 nm ultraviolet light illumination due to the photogenerated carriers in Ga 2 O 3 . In addition, the heterojunction provides evident rectified properties in the dark, and the improved rectified properties can be obtained under the 254 nm UV light illumination due to the electron-hole pairs separation in the depletion region due to the built-in electric field, while the rectified ratio decrease from %700 at AE0.5 to %20 V at AE5 V, which is due to the electron tunneling caused by shrinking depletion layer. Moreover, the band offsets of the heterojunction is determined by the X-ray photoelectron spectroscopy, which suggests a type I alignment with conduction band offset of 0.94 AE 0.02 eV and valence band offset of 0.53 AE 0.02 eV. The interfacial energy band offsets verify the potential implication for their rectifying property.

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Oxide bipolar electronics: materials, devices and circuits

Cited by 88 publications

References 236 publications

Electrical Properties of Vertical p‐NiO/n‐Ga₂O₃ and p‐ZnCo₂O₄/n‐Ga₂O₃ pn‐Heterodiodes

Electrical Properties of Vertical p‐NiO/n‐Ga₂O₃ and p‐ZnCo₂O₄/n‐Ga₂O₃ pn‐Heterodiodes

Room-temperature synthesized copper iodide thin film as degenerate p-type transparent conductor with a boosted figure of merit

Rectifying Effect of the Sr₃Al₂O₆/Ga₂O₃ Heterojunction

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Oxide bipolar electronics: materials, devices and circuits

Cited by 88 publications

References 236 publications

Electrical Properties of Vertical p‐NiO/n‐Ga2O3 and p‐ZnCo2O4/n‐Ga2O3 pn‐Heterodiodes

Electrical Properties of Vertical p‐NiO/n‐Ga2O3 and p‐ZnCo2O4/n‐Ga2O3 pn‐Heterodiodes

Room-temperature synthesized copper iodide thin film as degenerate p-type transparent conductor with a boosted figure of merit

Rectifying Effect of the Sr3Al2O6/Ga2O3 Heterojunction

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Electrical Properties of Vertical p‐NiO/n‐Ga₂O₃ and p‐ZnCo₂O₄/n‐Ga₂O₃ pn‐Heterodiodes

Electrical Properties of Vertical p‐NiO/n‐Ga₂O₃ and p‐ZnCo₂O₄/n‐Ga₂O₃ pn‐Heterodiodes

Rectifying Effect of the Sr₃Al₂O₆/Ga₂O₃ Heterojunction