Oxidative‐Etching‐Assisted Synthesis of Centimeter‐Sized Single‐Crystalline Graphene

Guo, Wei; Feng, Jing; Xiao, Jian; Zhou, Chao; Lin, Yuanwei; Wang, Shuai

doi:10.1002/adma.201503705

Cited by 84 publications

(84 citation statements)

References 34 publications

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“…Large single‐crystal bilayer graphene domains with good electrical quality are needed for nanoelectronic applications. Formation of domains with sizes larger than 200 µm has been achieved in a short time using the strategy of suppressing the nucleation rate by adding surface oxygen to passivate the copper foil and improving the growth rate by linearly increasing carbon‐precursor feeding (Figure S8b, Supporting Information).…”

Section: Resultsmentioning

confidence: 99%

Synchronous Growth of High‐Quality Bilayer Bernal Graphene: From Hexagonal Single‐Crystal Domains to Wafer‐Scale Homogeneous Films

Wang

Pan

et al. 2017

Adv Funct Materials

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The precise control of the domain structure, layer thickness, and stacking order of graphene has attracted intense interest because of its great potential for nanoelectronics applications. Much effort has been devoted to synthesize semiconducting Bernal (AB)-stacked bilayer graphene because of its tunable band structure and electronic properties that are unavailable to single-layer graphene. However, fast growth of large-scale bilayer graphene sheets with a high AB-stacking ratio and high mobility on copper poses a tremendous challenge, which has to overcome the self-limiting effect. This study reports a low-cost but facile method to rapidly synthesize bilayer Bernal graphene by atmospheric pressure chemical vapor deposition using polystyrene as the feedstock. The bilayer graphene grains and continuous film obtained are of high quality and exhibit field-effect hole mobilities as high as 5700 and 2200 cm 2 V −1 s −1 at room temperature, respectively. In addition, a synchronous growth mechanism of bilayer graphene is revealed by monitoring the growth process, resulting in a high surface coverage of nearly 100% for a near-perfect AB-stacking order. This new synthesis route is significant for industrial application of bilayer graphene and investigation of the growth mechanism of graphene by the chemical vapor deposition process.

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Section: Resultsmentioning

confidence: 99%

Synchronous Growth of High‐Quality Bilayer Bernal Graphene: From Hexagonal Single‐Crystal Domains to Wafer‐Scale Homogeneous Films

Wang

Pan

et al. 2017

Adv Funct Materials

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“…Graphene domain size versus growth rate on Cu foil in 2009–2016 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54…”

Section: The Merits Of Ultrafast Graphene Growthmentioning

confidence: 99%

“…The growth of large‐area high‐quality graphene films is fundamental for the upcoming graphene applications. Chemical vapour deposition (CVD) method offers good prospects to produce large‐size graphene films due to its simplicity, controllability and cost‐efficiency 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75. Many researches have verified that graphene can be catalytically grown on metallic substrates, like ruthenium (Ru),13, 14 iridium (Ir),15, 16 platinum (Pt),17, 18, …”

Section: Introductionmentioning

confidence: 99%

The Way towards Ultrafast Growth of Single‐Crystal Graphene on Copper

Zhang

Qiu

et al. 2017

Advanced Science

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The exceptional properties of graphene make it a promising candidate in the development of next‐generation electronic, optoelectronic, photonic and photovoltaic devices. A holy grail in graphene research is the synthesis of large‐sized single‐crystal graphene, in which the absence of grain boundaries guarantees its excellent intrinsic properties and high performance in the devices. Nowadays, most attention has been drawn to the suppression of nucleation density by using low feeding gas during the growth process to allow only one nucleus to grow with enough space. However, because the nucleation is a random event and new nuclei are likely to form in the very long growth process, it is difficult to achieve industrial‐level wafer‐scale or beyond (e.g. 30 cm in diameter) single‐crystal graphene. Another possible way to obtain large single‐crystal graphene is to realize ultrafast growth, where once a nucleus forms, it grows up so quickly before new nuclei form. Therefore ultrafast growth provides a new direction for the synthesis of large single‐crystal graphene, and is also of great significance to realize large‐scale production of graphene films (fast growth is more time‐efficient and cost‐effective), which is likely to accelerate various graphene applications in industry.

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“…Figure a–d shows the structural evolution of WSe 2 domains on Au with a time interval of 10 s. It can be seen that all the domains show a regular triangular shape, which is a characteristic of single crystals of WSe 2 . Similar to the growth of graphene and other 2D materials on metals, the single‐crystal WSe 2 domains can grow across the grain boundaries of Au substrates. We used a similar method to that proposed by Xu et al to quantitatively analyze the growth rate of WSe 2 on Au.…”

mentioning

confidence: 93%

Ultrafast Growth of High‐Quality Monolayer WSe₂ on Au

et al. 2017

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The ultrafast growth of high-quality uniform monolayer WSe is reported with a growth rate of ≈26 µm s by chemical vapor deposition on reusable Au substrate, which is ≈2-3 orders of magnitude faster than those of most 2D transition metal dichalcogenides grown on nonmetal substrates. Such ultrafast growth allows for the fabrication of millimeter-size single-crystal WSe domains in ≈30 s and large-area continuous films in ≈60 s. Importantly, the ultrafast grown WSe shows excellent crystal quality and extraordinary electrical performance comparable to those of the mechanically exfoliated samples, with a high mobility up to ≈143 cm V s and ON/OFF ratio up to 9 × 10 at room temperature. Density functional theory calculations reveal that the ultrafast growth of WSe is due to the small energy barriers and exothermic characteristic for the diffusion and attachment of W and Se on the edges of WSe on Au substrate.

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Oxidative‐Etching‐Assisted Synthesis of Centimeter‐Sized Single‐Crystalline Graphene

Cited by 84 publications

References 34 publications

Synchronous Growth of High‐Quality Bilayer Bernal Graphene: From Hexagonal Single‐Crystal Domains to Wafer‐Scale Homogeneous Films

Synchronous Growth of High‐Quality Bilayer Bernal Graphene: From Hexagonal Single‐Crystal Domains to Wafer‐Scale Homogeneous Films

The Way towards Ultrafast Growth of Single‐Crystal Graphene on Copper

Ultrafast Growth of High‐Quality Monolayer WSe₂ on Au

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Oxidative‐Etching‐Assisted Synthesis of Centimeter‐Sized Single‐Crystalline Graphene

Cited by 84 publications

References 34 publications

Synchronous Growth of High‐Quality Bilayer Bernal Graphene: From Hexagonal Single‐Crystal Domains to Wafer‐Scale Homogeneous Films

Synchronous Growth of High‐Quality Bilayer Bernal Graphene: From Hexagonal Single‐Crystal Domains to Wafer‐Scale Homogeneous Films

The Way towards Ultrafast Growth of Single‐Crystal Graphene on Copper

Ultrafast Growth of High‐Quality Monolayer WSe2 on Au

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Ultrafast Growth of High‐Quality Monolayer WSe₂ on Au