Oxidation through the zirconia substrates of heteroepitaxial silicon films Grown on yttria-stabilized cubic zirconia

Zinc was diffused into GaAs, Al0.38Ga0.62As, and GaAs0.6P0.4 using a 2000–3000-Å-thick yttria-stabilized cubic-zirconia (YSZ) protection layer to produce planar p-n junctions. The YSZ layer greatly reduced thermal decomposition of the semiconductor while allowing zinc to diffuse into the III-V semiconductors. The diffusion depth showed a square-root-of-time dependence for all samples protected with YSZ. Characterization of the GaAs diffused with the YSZ protection process indicates that the YSZ layer has virtually no effect on either the carrier concentration profile or activation energy. No thermal decomposition was observed by visual inspection following a diffusion using only elemental Zn on the GaAs, Al0.38Ga0.62As, or GaAs0.6P0.4 samples protected with a YSZ layer. Photoluminescence analysis shows that the YSZ-protected GaAs samples have higher luminescence efficiency relative to unprotected samples. Device fabrication has been demonstrated by combining the YSZ passivation process with selective area diffusion. Our results indicate that the YSZ diffusion procedure has greater tolerance to process variations than previously reported diffusion procedures for zinc in III-V semiconductors.

show abstract

Properties of Single-Crystal Silicon Films on Amorphous SiO₂on Single-Crystal Cubic Zirconia Substrates

Golecki

Maddox

Glass

et al. 1985

MRS Proc.

View full text Add to dashboard Cite

A new approach to achieving a large-area silicon-on-insulator technology without pre-patterning is described. (100) Si films are first grown epitaxially on (100) yttria-stabilized cubic zirconia (YSZ) substrates by the pyrolysis of SiH4. The Si side of the <Si>/<YSZ>interface is then oxidized in pyrogenic steam (at 925 °C) or dry oxygen (at 1100°C) to form the structure <Si>/amorphous SiO2/<YSZ>. The oxidation occurs by the rapid diffusion of oxidants through the 0.42 mm thick YSZ substrate; e.g., a 0.3 μm SiO2 layer is obtained in 6 h in steam. The samples are analyzed by Rutherford backscattering and channeling spectrometry, X-ray diffraction, infra-red reflectance, Auger electron spectroscopy and sheet resistance measurements. In addition to forming the preferred Si/SiO2 interface, the back-side oxidation eliminates the most defective part of the Si film.

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

hi@scite.ai

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Oxidation through the zirconia substrates of heteroepitaxial silicon films Grown on yttria-stabilized cubic zirconia

Cited by 3 publications

References 31 publications

Oxidizing heat treatment of nickel embedded in a barium titanate ceramic: kinetics and mechanisms of the metal oxidation

Oxidizing heat treatment of nickel embedded in a barium titanate ceramic: kinetics and mechanisms of the metal oxidation

Zinc diffusion in III-V semiconductors using a cubic-zirconia protection layer

Properties of Single-Crystal Silicon Films on Amorphous SiO₂on Single-Crystal Cubic Zirconia Substrates

Contact Info

Product

Resources

About

Oxidation through the zirconia substrates of heteroepitaxial silicon films Grown on yttria-stabilized cubic zirconia

Cited by 3 publications

References 31 publications

Oxidizing heat treatment of nickel embedded in a barium titanate ceramic: kinetics and mechanisms of the metal oxidation

Oxidizing heat treatment of nickel embedded in a barium titanate ceramic: kinetics and mechanisms of the metal oxidation

Zinc diffusion in III-V semiconductors using a cubic-zirconia protection layer

Properties of Single-Crystal Silicon Films on Amorphous SiO2on Single-Crystal Cubic Zirconia Substrates

Contact Info

Product

Resources

About

Properties of Single-Crystal Silicon Films on Amorphous SiO₂on Single-Crystal Cubic Zirconia Substrates