Oxidation study of plasma-enhanced chemical vapor deposited and rf sputtered hydrogenated amorphous silicon carbide films

Choi, W. K.; Lee, L. P.; Foo, Sok Lin; Gangadhaŕan, S.; Chong, Nui; Tan, Leng Seow

doi:10.1063/1.1330252

Cited by 12 publications

(8 citation statements)

References 31 publications

(26 reference statements)

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“…For the 600°C annealed films, the amount of Si-H and C-H bonds reduces from 61.3% to 9.7% for a-Sio. 5 Co. 5 :H films, but only from 63.4 to 46.1% for a-SiojCo.3:H films. This agrees with the etch results in that the 600 °C annealed a-Si 0 .5C 0 .5:H films showed an drastic decrease in the etch rate, and only a modest reduction for the 600 °C annealed a-Sio.…”

Section: Methodsmentioning

confidence: 93%

“…The peaks between 740 and 1010 cm" 1 were deconvoluted into the Si-C stretching mode (760-810 cm" 1 ) [5,6], the Si-CH 3 peaks (920-980 cm" 1 ) (980-1010 cm" 1 ) [8]. The peaks between 1580 to 1620 cm" 1 is assigned to the C=C aromatic and olefinic stretching modes [9] and the region between 2000 and 2150 cm" 1 to the stretching mode of the Si-H n bonds [5]. For the 600°C annealed films, the Si-C peak of the a-Si 0 .5C 0 .5:H films increases sharply and the Si-H n , C-H n and Si-CH 3 peaks reduce drastically.…”

Section: Methodsmentioning

confidence: 99%

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ICP ETCHING AND STRUCTURE STUDY OF PECVD SiC FILMS

Shi

Choi

Chor

2002

Int. J. Mod. Phys. B

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Results of Induction Coupled Plasma (ICP) etching of as-prepared and annealed PECVD hydrogenated amorphous silicon carbide (a-Siix C x :H) films using CF4/O2 chemistry are presented. The etch rate of the annealed films decreased with an increase in annealing temperature. Infrared spectra for the annealed films showed a significant decrease in the Si-H and C-H bonds, and a pronounced increase in the Si-C bonds. The XRD results showed several poly-crystalline Si-C structure in films annealed at 800°C. ESR spectra show the density of the dangling bonds increased as a function of annealing temperature. The drop in etch rate of the annealed films is due to the reduction in porous structures resulted from dehydrogenation and increased crystallinity of the film.(2) J COHere, a(co) is the absorption coefficient, co the wavenumber, A the inverse cross section coefficients for the Si-H (1.35xl0 21 ), C-H (1.35xl0 21 ) and Si-C (2.13xl0 19 ) bonds [4]. The XRD measurements were carried with a CuKoc radiation. A Plasma-Therm SLR770 4318 Int. J. Mod. Phys. B 2002.16:4318-4322. Downloaded from www.worldscientific.com by UNIVERSITY OF WATERLOO on 02/03/15. For personal use only.

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Section: Methodsmentioning

confidence: 93%

Section: Methodsmentioning

confidence: 99%

ICP ETCHING AND STRUCTURE STUDY OF PECVD SiC FILMS

Shi

Choi

Chor

2002

Int. J. Mod. Phys. B

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“…There are comparatively more research in the effect of annealing on a-Si 1-x C x :H films [5][6][7][8] as compare to the oxidation study of this material. We have recently reported oxidation results of a-Si 0.2 C 0.8 :H films [9]. It was found that the oxidation process proceeded very rapidly at a relatively low temperature of 400°C.…”

Section: Introductionmentioning

confidence: 97%

Oxidation study of hydrogenated amorphous silicon carbide films

2000

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We present results of an oxidation study of a-Si 1-x C x :H films prepared by the plasma enhanced chemical vapor deposition of silane and acetylene. The composition (i.e. x) of the samples was determined by the flow rates of silane and acetylene. Oxidation was carried out at 400 to 850°C in dry oxygen ambient. The infrared (IR) spectra of the as-prepared films showed the intensity of the Si-C peak decreases and the Si-CH 3 peak increases as x increases. The Si-H peak shifts to higher frequency as x increases. Note that the incorporation of CH 3 radicals in a-Si 1-x C x :H films has shown to introduce voids and increased the porosity of the films. The IR spectra of the oxidized samples showed clear Si-O stretching and rocking/wagging modes for all films. We suggest that the growth of oxide on a-Si 1-x C x :H is a result of voids that facilitate the diffusion of oxidants into the film. We shown that the activation energy, obtained from the linear rate region of the oxide growth, was far less than the dissociation energies of the Si-Si, Si-C and Si-H bonds. We suggest that this could be due to the amorphous nature of the samples that caused the various chemical bonds to be weaker during oxidation.

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“…Some works had been done on the oxidation of hydrogenated amorphous Si 1−x C x (a-Si 1−x C x :H) films. [10][11][12] Authors demonstrated that the incorporation of the CH 3 radicals introduced void defects and increased the porosity of a-Si 1−x C x :H films, which provided the necessary porous structure for oxide growth. [10,11] The a-Si 1−x C x :H films reported by Refs.…”

Section: Introductionmentioning

confidence: 99%

“…[10][11][12] Authors demonstrated that the incorporation of the CH 3 radicals introduced void defects and increased the porosity of a-Si 1−x C x :H films, which provided the necessary porous structure for oxide growth. [10,11] The a-Si 1−x C x :H films reported by Refs. [10,11] with a large number of CH 3 radicals started to oxidize at lower temperature 200 • C and 400 • C in oxygen-containing environments, respectively.…”

Section: Introductionmentioning

confidence: 99%

Comparative study of high temperature anti-oxidation property of sputtering deposited stoichiometric and Si-rich SiC films

Wang¹,

Lü²,

Zhang³

et al. 2022

Chinese Phys. B

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Stoichiometric and silicon-rich (Si-rich) SiC films were deposited by Microwave Electron Cyclotron Resonance (MW-ECR) plasma enhanced RF magnetron sputtering method. As-deposited films were oxidized at 800, 900 and 1000 ℃ in air for 60 min. The chemical composition and structure of the films were analyzed by X-ray Photoelectron Spectroscopy (XPS), Raman spectroscopy and Fourier Transform Infrared spectroscopy (FT-IR). The surface morphology of the films before and after high temperature oxidation was measured by atomic force microscopy. The mechanical property of the films was measured by a Nano-indenter. The anti-oxidation temperature of the Si-rich SiC film is 100 ℃ higher than that of the stoichiometric SiC film. The oxidation layer thickness of the Si-rich SiC film is thinner than that of the stoichiometric SiC film in depth direction. The large amount of extra silicon in the Si-rich SiC film plays an important role in the improvement of its high temperature anti-oxidation property.

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Oxidation study of plasma-enhanced chemical vapor deposited and rf sputtered hydrogenated amorphous silicon carbide films

Cited by 12 publications

References 31 publications

ICP ETCHING AND STRUCTURE STUDY OF PECVD SiC FILMS

ICP ETCHING AND STRUCTURE STUDY OF PECVD SiC FILMS

Oxidation study of hydrogenated amorphous silicon carbide films

Comparative study of high temperature anti-oxidation property of sputtering deposited stoichiometric and Si-rich SiC films

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