2016
DOI: 10.1016/j.jeurceramsoc.2016.03.016
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Oxidation resistance of SiC ceramics prepared by different proceessing routes

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Cited by 50 publications
(13 citation statements)
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“…From the exponential coefficient given by figure 11 b) and according to equation (6), the activation energy E a is estimated around 820 kJ mol -1 . This relatively high value of E a can be explained by the presence of aluminum that enhances the oxygen diffusion through the silica layer [21]. As can be deduced from table 2, the second hypothesis gives results more coherent with the SEM observations regarding the Si-SiC 6 sample.…”
Section: Oxidationsupporting
confidence: 66%
“…From the exponential coefficient given by figure 11 b) and according to equation (6), the activation energy E a is estimated around 820 kJ mol -1 . This relatively high value of E a can be explained by the presence of aluminum that enhances the oxygen diffusion through the silica layer [21]. As can be deduced from table 2, the second hypothesis gives results more coherent with the SEM observations regarding the Si-SiC 6 sample.…”
Section: Oxidationsupporting
confidence: 66%
“…Silicon carbide (SiC) is an important engineering ceramic due to a unique combination of properties, such as high thermal conductivity, excellent wear and corrosion resistances, and high‐temperature mechanical properties . SiC‐ceramic applications include heaters, susceptors, dummy wafers for the processing of semiconductors and light‐emitting diodes (LED), diesel particulate filters, and heat exchangers, taking advantage of the excellent thermal conductivity and relative properties of the material.…”
Section: Introductionmentioning
confidence: 99%
“…According to calculations made from Figure 8 the activation energy value of SiC/IrSi3 materials amounts to EOxid = 58 kJ/mol. This activation energy turns out to be of the order of magnitude of oxidation processes by diffusion [42] and nearly half the value of the activation energy of oxidation of pure silicon in dry oxygen, EOxid = 120 kJ/mol [43] (minimum value taken by SiC/Si composite materials). These differences in activation energies show that oxide formation on the surface of composite materials with iridium is energetically more unfavorable than in materials with pure silicon.…”
Section: Thermomechanical Properties Of Sic/si and Sic/si-irsi3 Matermentioning
confidence: 92%