Vanadium dioxide exhibits an insulator-to-metal transition (IMT) accompanied by a decrease in resistivity of several magnitudes and a large increase in reflectivity. The IMT can be triggered in multiple ways. The most common method is to heat a sample above 67°C causing it to go from a semiconducting to metallic phase. However, the transition can also be triggered using current injection, a change in electric field, or an optical pump. A diverse array of potential applications exploiting VO 2 including next generation CMOS, switches, thermal relays, intelligent window coatings, bolometers, filters, memory and logic devices, and reconfigurable circuit elements and antennas from dc to x-ray wavelengths have been proposed in the literature. I would like to thank my advisor, Bobby Weikle, for all of his assistance, teachings, guidance, and encouragement on this journey. I give thanks to my committee members, Prof. Art Lichtenberger, Jiwei Li, Mircea Stan, and Jim Fitz-gerald for their insight and advice along with Prof. Stu Wolf for sharing his ideas and guidance. Thank you Salinporn (Lin) Kittiwatanakul for providing the VO 2 film and helping with the materials science diagnostics, Matt Bauwens for his help with the on-wafer terahertz measurements, and Lei Liu for getting me started on my own research while he was finishing his PhD. Acknowledgement also goes to all my group mates, past and present, in the FIR lab for their valuable discussions and assistance throughout my research and those in UVML who taught me and assisted me with the processes and procedures necessary used in this research. I extend my gratitude to the FIR lab manager, Dr. Acar Isin, for his help with the experimental setups and earlier on with cryogenics and to those who work in UVML,