Oxidation of tantalum film on silicon

Revesz, A. G.; Allison, J.; Kirkendall, T. D.; Reynolds, J. H.

doi:10.1016/0040-6090(74)90024-8

Cited by 10 publications

(9 citation statements)

References 7 publications

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“…As has been shown previously, the Ta oxide films, even those obtained at 700~ are noncrystalline and morphologically (as judged by optical and electron microscopy) very uniform (3). They all exhibited bright, continuous interference colors.…”

Section: Resultssupporting

confidence: 75%

“…The published k values vary significantly, but its actual value has little effect on the refractive index and thickness of dielec.tric films on silicon. The possibility of having a discrete SiO2 film between the Si substrate and Ta oxide film has already been eliminated on the basis of ellipsometric measurements performed at two different wavelengths (3). This result has also-indicated that the Ta oxide film is nonabsorbing between 435.8 and 546.1 nm wavelengths.…”

Section: Methodsmentioning

confidence: 99%

“…These oxides have been prepared by thermal oxidation of vacuum-deposited Ta or Nb films. In the course of that work, we have observed that the refractive index of Ta oxide films on silicon exhibits a gradient (3). This has been attributed to the incorporation of silicon in oxidized form into the oxide during its growth.…”

mentioning

confidence: 94%

“…Rutherford backscattering (RBS) analysis has shown that the Ta oxide films on silicon are, in the first approximation, stoichiometric Ta2Os; however, the substrate-film interaction has been considered as a possible reason for the increase of their apparent density with thickness (4). The results of gravimetric and secondary ion mass spectroscopy (SIMS) analysis (5) and MOS capacitance measurements (6) also indicate that some interaction takes place in Si/Ta (Ta2Os) structures.…”

mentioning

confidence: 99%

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Optical Properties of Tantalum Oxide Films on Silicon

Revesz¹,

Reynolds²,

Allison³

1976

J. Electrochem. Soc.

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Tantalum oxide films on silicon were prepared by thermal oxidation of vacuum‐deposited Ta films. The optical absorption of these noncrystalline films resembles closely that of crystalline Ta2O5 , indicating a strong similarity in their short‐range order structures. For given oxidation conditions, the refractive index of the oxide films increases from ∼1.93 to 2.34 as the thickness increases from 12.5 to 111.7 nm. For a given tantalum film thickness, higher oxidation temperatures result in thicker oxides of lower refractive index. Additional oxide growth occurs during postoxidation heat‐treatment in oxygen while the refractive index decreases. The refractive index of a given oxide film increases from the Si/oxide interface toward the outer surface, e.g., from 2.08 to about 2.4. These phenomena are attributed to the incorporation of silicon into the Ta oxide during its growth. However, the estimated amount of silicon in the oxide is not sufficient to explain the observed values if it is assumed that the lowering of the refractive index is due simply to mixing Ta2O5 with SiO2 . Thus, it is concluded that the structure of noncrystalline Ta2O5 has a great flexibility which is further enhanced by incorporating silicon; the polarizability of the Ta‒O bond is then strongly affected by silicon. This oxide has been applied as antireflection film in recently developed shallow junction silicon solar cells of increased conversion efficiency.

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Section: Resultssupporting

confidence: 75%

Section: Methodsmentioning

confidence: 99%

mentioning

confidence: 94%

mentioning

confidence: 99%

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Optical Properties of Tantalum Oxide Films on Silicon

Revesz¹,

Reynolds²,

Allison³

1976

J. Electrochem. Soc.

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“…Tantalum and tantalum pentoxide have long been used in thin film microelectronic devices (64)(65)(66)(67)(68)(69). Several methods exist for deposition of dense uniform Ta205 films, including chemical vapor deposition (CVD)(70-72), physical vapor deposition (PVD) (73)(74)(75)(76), anodic deposition (77,78), and thermal oxidation (79) of tantalum metal films.…”

Section: -Backgroundmentioning

confidence: 99%

Task 3.0: Advanced power systems. Semi-annual report, April 1--June 30, 1993

McCollor¹,

Zygarlicke²,

Mann³

et al. 1993

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This report was prepm'ed as an account of work sponsored by an agency of the United States Govermnent. Neither the United States Government nor any agency thereof, nor any of their employees, makes ,any warranty, express or implied, or assumes any legal liability or responsibility tor the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned dgMs. Reference herein to any specific commercial product, process, or service by trade name, trademark, manufacturer, or otherwise does not necessarily cott,;titute or imply its endorsement, recommendation, or favoring by the United States Government or ,any agency thereof. The views and opinions of authors expressed herein do not necessarily state or reflect those of the United States Govertunent or any agency thereof. This report has been reproduced directly f_om the best available copy.

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Characteristics of ta²O⁵ thin film prepared by electron beam heating method

Sekido

1994

Electron Comm Jpn Pt II

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A Ta2O5 film formed by ϵ‐beam evaporation (EB‐Ta2O5) was nonstoichiometric because of oxygen deficiency, resulting in electron trapping. As a result, the dielectric constant was higher than that of bulk material. the trapped fixed‐charge density increased with a decrease of film thickness. When the film was 300 nm, the trapped fixed Charge density was as high as 1016 cm−3. However, when the film was thicker than 300 nm, it decreased rapidly. the dielectric constant approached the bulk value as the film thickness increased, and the film resistance was low because of oxygen deficiency. When the film was 300 nm, the resistivity p was 107 − 108 ω ‐cm (5 × 105 V/cm). When the electric field reached about 7 × 105 V/cm, only the current density increased in spite of the slight increase of the electrical field. When the film was thicker than 300 nm, the resis tivity increased and the clamp field became unclear with an increase of thickness. an EL (electroluminescent) device was formed using the EB‐Ta2O5 film sandwiched with SiO2 films as the luminescent film. the luminance of the device was 100 cd/2. the luminescence spectrum had peaks at 380, 430, 475, and 540 nm, indicating that there were energy levels at 3.2, 2.9, 2.6, and 2.3 eV.

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Oxidation of tantalum film on silicon

Cited by 10 publications

References 7 publications

Optical Properties of Tantalum Oxide Films on Silicon

Optical Properties of Tantalum Oxide Films on Silicon

Task 3.0: Advanced power systems. Semi-annual report, April 1--June 30, 1993

Characteristics of ta²O⁵ thin film prepared by electron beam heating method

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Oxidation of tantalum film on silicon

Cited by 10 publications

References 7 publications

Optical Properties of Tantalum Oxide Films on Silicon

Optical Properties of Tantalum Oxide Films on Silicon

Task 3.0: Advanced power systems. Semi-annual report, April 1--June 30, 1993

Characteristics of ta2O5 thin film prepared by electron beam heating method

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Characteristics of ta²O⁵ thin film prepared by electron beam heating method