Oxidation of silicon in an electron cyclotron resonance oxygen plasma: Kinetics, physicochemical, and electrical properties

A kinetics study of the electron cyclotron resonance plasma oxidation of silicon

“…Spectroscopic ellipsometry has been shown to yield reliable information for complex films with the use of stratified layer models 9 . Each of the layers is either a medium for which the optical properties are known, such as SiO 2 , or where the properties can be described by a mixture of components.…”

Low SiO2/Si interface state density for low temperature oxides prepared by electron cyclotron resonance oxygen plasma

“…Our previous study [8] we may assume that the positive ions (O þ 2 or O þ ) exist in the SiO 2 films. Kimura et al [10] and Carl et al [11] reported that highly exited O and O þ 2 exist in the plasma. Dzioba et al [12] also observed not only O and O þ 2 but also O þ .…”

Plasma-assisted oxidation, anodization, and nitridation of silicon

“…133 To cold trap and DP Input microwave power I Schematic of electron cyclotron resonance (ECR) plasma-assisted j oxidation system. From [44], reproduced with permission.…”

“…This approach permits high oxidation rates at low substrate temperature with relatively low damage. The most extensively studied configuration is the electron cyclotron resonance (ECR) reactor, depicted schematically in Figure 5 [44]. Initial studies were performed under floating potential conditions at 0.2 mTorr O^ [45][46][47].…”