Oxidation of Si(100) Surfaces with Bi and Ag Overlayers in Ozone Atmosphere

Yamada, Takumi; Ogihara, Mitsuhiko; Abe, Hitoshi

doi:10.1143/jjap.30.3488

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(1) Oxidation Mechanism In An Ozone-containing1

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2002

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“…8. Ratio of 16 O secondary ion intensity to 30 Si for SiC after oxidation at 973 K in oxygen or oxygen-7% ozone atmosphere. Fig.…”

Section: (1) Oxidation Mechanism In An Ozone-containingmentioning

confidence: 99%

Oxidation of Silicon and Silicon Carbide in Ozone‐Containing Atmospheres at 973 K

Narushima

Kato

Murase

et al. 2002

Journal of the American Ceramic Society

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The oxidation behavior of a silicon wafer, chemically vapor‐deposited SiC, and single‐crystal SiC was investigated in an oxygen—2%–7% ozone gas mixture at 973 K. The thickness of the oxide film that formed during oxidation was measured by ellipsometry. The oxidation rates in the ozone‐containing atmosphere were much higher than those in a pure oxygen atmosphere. The parabolic oxidation kinetics were observed for both silicon and SiC. The parabolic rate constants varied linearly with the ozone‐gas partial pressure. Inward diffusion of atomic oxygen formed by the dissociation of ozone gas through the SiO2 film apparently was the rate‐controlling process.

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“…8. Ratio of 16 O secondary ion intensity to 30 Si for SiC after oxidation at 973 K in oxygen or oxygen-7% ozone atmosphere. Fig.…”

Section: (1) Oxidation Mechanism In An Ozone-containingmentioning

confidence: 99%