Oxidation of plasma enhanced chemical vapour deposited silicon nitride and oxynitride films

Denisse, C. M. M.; Smulders, H.E.; Habraken, F.H.P.M.; Weg, W. F. van der

doi:10.1016/0169-4332(89)90417-0

Cited by 12 publications

(3 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…After nitridation at 1000 or 1150~ an N-H~ bond absorption was determined, corresponding to a hydrogen content up to 10 a/o. These -NHn groups are structurally equivalent to oxygen atoms and very stable with respect to hydrogen content and temperature treatment (30,31).…”

Section: Resultsmentioning

confidence: 99%

Thermal Annealing Effects on the Mechanical Properties of Plasma‐Enhanced Chemical Vapor Deposited Silicon Oxide Films

Schliwinski

Schnakenberg

Windbracke

et al. 1992

J. Electrochem. Soc.

View full text Add to dashboard Cite

An annealing study was performed on nonstoichiometric amorphous SiO= (x < 2) films fabricated by plasmaenhanced chemical vapor deposition (PECVD) at 300~ using Sill4 and N20 chemistry. After deposition, these layers contain hydrogen and nitrogen impurities, which were found to play a major role in the explanation of the properties of annealed films. Fourier transform infrared absorption spectra of plasma enhanced vapor deposited oxide layers annealed at elevated temperatures show approximately the same features as the spectra of thermal oxide films. This similarity demonstrates the ability of PECVD oxides to form a regular network of Si-O tetrahedrals. From distinct deviations in these spectra, the participation of Si-N bonds located within the Si-O network is concluded. The participation of Si-N bonds is also confirmed by the estimation of the activation energies in wet chemical etching studies using ammonium hydroxide water solution. The mechanical stress of the PECVD oxides clearly depends on the deposition conditions and their thermal history. With increasing annealing temperature the intrinsic stress increases until a maximum film stress value is reached between 700 and 800~ Above this temperature the intrinsic stress is continuously reduced until the total stress approaches the value of the thermal film stress. This is explained mainly by hydrogen desorption, Si-N bond formation, and SiO2 bond rearrangement processes. Depending on deposition conditions and postannealing steps, it is possible to design layers with a predefined stress.

show abstract

Section: Resultsmentioning

confidence: 99%

Thermal Annealing Effects on the Mechanical Properties of Plasma‐Enhanced Chemical Vapor Deposited Silicon Oxide Films

Schliwinski

Schnakenberg

Windbracke

et al. 1992

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

“…This implies that the SiN surface has changed and some oxygen (O) atoms have reacted with SiN. In [14], it is found that the SiN film is highly dense and the surface terminates with Si-N bond. The Si-N bond is too strong to be broken at 400 • C. Therefore, the Si-O-Si bond cannot be formed in Sample C. However, in the 1000 • C furnace condition, the nitrogen in the SiN surface layer can be substituted by the oxygen, and then the thin silicon oxide (SiO 2 )/oxynitride (Si x O y N z ) layer is formed.…”

Section: Si/thin Film/glass Anodic Bondingmentioning

confidence: 99%

A single-mask substrate transfer technique for the fabrication of high-aspect-ratio micromachined structures

Tang

Liu

Agarwal

et al. 2007

J. Micromech. Microeng.

View full text Add to dashboard Cite

In this paper, a single-mask substrate transfer process for the fabrication of high-aspect-ratio (HAR) suspended structures is presented. The HAR silicon structures are fabricated using a deep reactive ion etching (DRIE) technique and then transferred to a glass wafer using silicon/thin film/glass anodic bonding and silicon thinning techniques. The HAR structures are released using self-aligned wet etching of the glass. Two key processes are discussed. One is the silicon/thin film/glass anodic bonding, with special emphasis on the effect of the bonding material on the bonding shear strength. The other is the silicon backside thinning via aqueous solution of potassium hydroxide (KOH). A lateral RF MEMS switch has been fabricated and demonstrates low loss up to 25 GHz. This substrate transfer process has the advantages of high-aspect ratio, low loss and high flexibility.

show abstract

“…Subsequently, when the depletion zone becomes too large, the process stops. In terms of the anodic bonding mechanism associated with the reaction between hydroxide groups [128], the anodic bonding consists of the oxidation of silicon and the hydrogen bonding between hydroxy groups. The chemical reaction equations are expressed as…”

Section: Si-thin Film-glass Anodic Bonding Mechanismmentioning

confidence: 99%

Design and fabrication of micromachined RF switches and integrated switching circuits

Tang¹

View full text Add to dashboard Cite

show abstract

Oxidation of plasma enhanced chemical vapour deposited silicon nitride and oxynitride films

Cited by 12 publications

References 6 publications

Thermal Annealing Effects on the Mechanical Properties of Plasma‐Enhanced Chemical Vapor Deposited Silicon Oxide Films

Thermal Annealing Effects on the Mechanical Properties of Plasma‐Enhanced Chemical Vapor Deposited Silicon Oxide Films

A single-mask substrate transfer technique for the fabrication of high-aspect-ratio micromachined structures

Design and fabrication of micromachined RF switches and integrated switching circuits

Contact Info

Product

Resources

About