Oxidation of NiFe(20 wt.%) thin films

Brückner, W.; Baunack, S.; Hecker, M.; Thomas, Jürgen; Groudeva‐Zotova, S.; Schneider, Claus M.

doi:10.1016/s0921-5107(01)00696-1

Cited by 24 publications

(23 citation statements)

References 12 publications

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“…Their evolution is well fitted by a dissociative Langmuir-model with the same reaction coefficient (k = 0.02 L À1 ), which confirms the lack of preferential oxidation. Consequently, there is no segregation at room temperature, conversely to the oxidation above 260°C [7]. Concerning the Ni(2p 3/2 ) decomposition, Fig.…”

Section: Kineticsmentioning

confidence: 88%

“…Such investigations have already been performed, not only at low pressure and temperatures above room temperature [5,6], but also by air or during electrochemical oxidation [7,8] and plasma formation [9]. Since the final oxide strongly depends on the oxidation conditions, they have evidenced the formation of different oxides including mainly iron oxide and also nickel oxide.…”

Section: Introductionmentioning

confidence: 99%

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Initial oxidation of polycrystalline Permalloy surface

et al. 2008

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Section: Kineticsmentioning

confidence: 88%

Section: Introductionmentioning

confidence: 99%

Initial oxidation of polycrystalline Permalloy surface

et al. 2008

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“…63 In addition, NiFe was also resistant to low-temperature oxidation. 64 This TJMD with two NiFe electrodes, abutted to a AlO x barrier, returned to a higher current state after the repetition of current-voltage studies [ Fig. 5 Interestingly, a TJMD with a Cobalt (Co)/NiFe bilayer bottom electrode and a NiFe top electrode exhibited signi¯cantly stable current suppression.…”

Section: Ability To Arbitrarily Choose Metal Electrodesmentioning

confidence: 94%

“…8) was observed. Other studies which investigated a relatively thick NiFe¯lm (180 nm) indicated that insigni¯cant oxidation occurred below 300 C. 64 With these studies it is clear that the molecular device community can use NiFe as a magnetic electrode safely if they can avoid heating NiFe beyond 90 C in the presence of air. However, annealing to improve the tunnel junction quality in inert ambience or vacuum should not a®ect NiFe capability to host molecules.…”

Section: Ability To Arbitrarily Choose Metal Electrodesmentioning

confidence: 99%

“…NiFe exhibited excellent oxidation resistance in low temperature ranges. 64 Furthermore, NiFe was used as an electrode in a $ 5 nm thick C 60 molecule-based spintronics devices. 69 To check the NiFe ability to withstand room temperature oxidation, we performed electrodeposition of Au and spectroscopic re°ectance studies.…”

Section: Ability To Arbitrarily Choose Metal Electrodesmentioning

confidence: 99%

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Advantages of Prefabricated Tunnel Junction-Based Molecular Spintronics Devices

Tyagi

Friebe

Baker

2015

NANO

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Molecule-based devices may govern the advancement of the next generation's logic and memory devices. Molecules have the potential to be unmatched device elements as chemists can mass produce an endless variety of molecules with novel optical, magnetic and charge transport characteristics. However, the biggest challenge is to connect two metal leads to a target molecule (s) and develop a robust and versatile device fabrication technology that can be adopted for commercial scale mass production. This paper discusses distinct advantages of utilizing commercially successful tunnel junctions as a vehicle for developing molecular spintronics devices. We describe the use of a prefabricated tunnel junction with the exposed sides as a testbed for molecular device fabrication. On the exposed sides of a tunnel junction molecules are bridged across an insulator by chemically bonding with the two metal electrodes; sequential growth of metal-insulator-metal layers ensures that separation between two metal electrodes is controlled by the insulator thickness to the molecular device length scale. This paper highlights various attributes of tunnel junction-based molecular devices with ferromagnetic electrodes for making molecular spintronics devices. We strongly emphasize a need for close collaboration between chemists and magnetic tunnel junction (MTJ) researchers. Such partnerships will have a strong potential to develop tunnel junction-based molecular devices for futuristic areas such as memory devices, magnetic metamaterials, high sensitivity multi-chemical biosensors, etc.

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Molecular electronics and spintronics devices produced by the plasma oxidation of photolithographically defined metal electrode

Tyagi

2012

Appl. Phys. A

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A multilayer edge molecular electronics device (MEMED), which utilize the two metal electrodes of a metal-insulator-metal tunnel junction as the two electrical leads to molecular channels, can overcome the long standing fabrication challenges for developing futuristic molecular devices. However, producing ultrathin insulator is the most challenging step in MEMED fabrication. A simplified molecular device approach was developed by avoiding the need of depositing a new materiel on the bottom electrode for growing ultrathin insulator. This paper discuss the approach for MEMED's insulator growth by one-step oxidation of a tantalum (Ta) bottom electrode, in the pholithographically defined region; i.e. ultrathin tantalum oxide (TaOx) insulator was grown by oxidizing bottom metal electrode itself. Organometallic molecular clusters (OMCs) were bridged across 1-3 nm TaOx along the perimeter of a tunnel junction to establish the highly efficient molecular conduction channels. OMC transformed the asymmetric transport profile of TaOx based tunnel junction into symmetric one. A TaOx based tunnel junction with top ferromagnetic (NiFe) electrode exhibited the transient current suppression by several orders. Further studies will be needed to strengthen the current suppression phenomenon, and to realize the full potential of TaOx based multilayer edge molecular spintronics devices.Introduction: Molecule based electronics and spin devices are highly promising to give novel computational strategies and ultimate device miniaturization. Molecular devices have been produced by various methods [1]. The common approaches are: (a) sandwiching selfassembled molecular monolayer between two metal electrodes, (b) bridging nm gap of the metal break-junction with molecule(s), and (c) bridging the molecular conduction channels across a tunnel junction's insulator [1,2]. The last approach is based on utilizing a prefabricated multilayer tunnel junction's edges as a test bed, and hence can be justifiably termed as multilayer edge molecular electronics device (MEMED) [2]. MEMED approach has several

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Oxidation of NiFe(20 wt.%) thin films

Cited by 24 publications

References 12 publications

Initial oxidation of polycrystalline Permalloy surface

Initial oxidation of polycrystalline Permalloy surface

Advantages of Prefabricated Tunnel Junction-Based Molecular Spintronics Devices

Molecular electronics and spintronics devices produced by the plasma oxidation of photolithographically defined metal electrode

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