Oxidation of molybdenum silicide thin film temperature sensors

Ho, CM; Prakash, S.; Doerr, H.J.; Deshpandey, C.V.; Bunshah, R.F.

doi:10.1016/0040-6090(92)90141-w

Cited by 5 publications

(1 citation statement)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…4 In addition, molybdenum is also inert to most chemicals used in the VLSI industry and is therefore used for interconnects and gate electrodes. Molybdenum silicide, in particular, has been used in different industries.…”

Section: Introductionmentioning

confidence: 99%

Pulsed laser-ablation deposition of thin films of molybdenum silicide and its properties as a conducting barrier for ferroelectric random-access memory technology

et al. 1999

View full text Add to dashboard Cite

We report on the feasibility of using molybdenum silicide as a conducting barrier for integration of ferroelectric lead zirconate titanate capacitors on Si. Thin films of MoSi 2 were deposited by pulsed laser-ablation deposition (PLD). The silicide films showed a structural transition from amorphous to orthorhombic to tetragonal phase as the temperature of deposition was changed from room temperature to 900 ± C. The four-probe resistivity and surface roughness of the films decreased with an increase in the deposition temperature and crystallinity of the phase. Ferroelectric (La, Sr)CoO 3 ͞Pb(Nb, Zr, Ti)O 3 ͞(La, Sr)CoO 3 capacitors were grown on Si͞poly Si͞MoSi 2 , and Si͞poly Si͞MoSi 2 ͞Pt structures. Transmission electron microscopy (TEM) studies of the MoSi 2 ͞LSCO and MoSi 2 ͞Pt͞LSCO heterostructures indicated the formation of a thin layer of SiO 2 . In the case of Pt͞MoSi 2 , Pt reacts with the silicide and forms PtSi, consuming the entire platinum layer and, thus, makes it unsuitable as a composite barrier. Electrical testing of the LSCO͞PNZT͞LSCO capacitors through capacitive coupling showed desirable ferroelectric properties on these substrates. 940

show abstract

Section: Introductionmentioning

confidence: 99%