Oxidation of Mg atomic monolayer onto silicon: A road toward MgOx/Mg2Si (11–1)/Si (100) heterostructure

Growth, stability and decomposition of Mg2Si ultra-thin films on Si (100)

“…Such mechanism of Mg2Si dissociation to form MgO is therefore strongly supported by thermodynamics considerations. Regarding the corresponding reaction enthalpy of -1123.6 kJ.mol -1 , we underline a strongly exothermic reaction whose observable effects have previously been discussed at RT [16]. As mentioned above, several reports have been made on the decomposition of thicker silicide films by exposure to oxygen ambient.…”

“…In a previous work, our group has studied the spontaneous and self-limited formation of an ultra-thin Mg2Si layer (70 pm thick) in the early stages of Mg deposition (0.25 ML) on Ag(111) [15] and Si(100) at RT [1]. Used as a growth template for MgO atomic films, we have then reported the RT crystallization of this interfacial Mg2Si driven by its partial decomposition under oxygen exposure [16]. With a similar approach here, we report in this study the formation of thin magnesium silicide films achieved by thermally enhanced solidphase reaction of few Mg atomic monolayers on Si(100).…”

A perfect wetting of Mg monolayer on Ag(111) under atomic scale investigation: First principles calculations, scanning tunneling microscopy, and Auger spectroscopy

“…From the shape of such a curve, the growth mode can be deduced. diffuse diffraction spots, one can rule out the surface alloy formation that would have induced long range disorder at the silver surface, as it has already been reported after thermal annealing of Mg onto Ag(100) 24 or after RT deposition of Mg onto Si(100) 18,19 .…”

“…To achieve nanoscale-controlled layer, new technological approaches for asdeposited atomically-controlled layers must be developed [3][4][5] and that cannot be fully exploited without a fundamental knowledge of interfacial effects and atomic organization such as surface dynamics, bonding, ordering, and intermixing of the atoms [6][7][8][9][10][11][12][13][14] . Recent efforts have been provided to develop new technological processes to design controlled stacked layers directly integrated, as for instance Atomic Layer Deposition and Oxidation method (ALDO) 3 through a careful control of surface reaction at each step of the process [15][16][17][18][19] . The focus of the following discussion will be related to ALDO process although it can be applied to other technological issues encountered in Microelectronics or other classes of solid-state physics and solid-solid topics.…”

MgO monolayer epitaxy on Ni (100)

“…To tackle this challenge, previously our group has focused on developing an accurate MBEbased method 23,24 for oxide films deposition in low-dimensions, that was tailored for studying MgO growth on diamagnetic metallic and semiconductor crystals 25,26,27 . Following the same approach, we explore through this paper the first insights of epitaxial growth in the MgO ML / Ni (100) system, on the road towards two-dimensional crystallization.…”