2007
DOI: 10.1063/1.2818373
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Oxidation of diamond films by atomic oxygen: High resolution electron energy loss spectroscopy studies

Abstract: Investigation of oxygen-related defects and the electrical properties of atomic layer deposited HfO 2 films using electron energy-loss spectroscopy High resolution electron energy loss spectroscopy study of Fomblin Z-tetraol thin filmsa) A combined scanning tunneling microscopy and electron energy loss spectroscopy study on the formation of thin, well-ordered β-Ga 2 O 3 films on CoGa (001) Diamond surface oxidation by atomic oxygen, annealing up to ϳ700°C, and in situ exposure to thermally activated hydrogen w… Show more

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Cited by 29 publications
(44 citation statements)
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“…[7][8][9][10] The correlation between chemical modification and morphological changes is important both from fundamental and applied points of views. 10,21 Following the exposures, the morphology of the polycrystalline diamond films was investigated using atomic force microscopy ͑AFM͒, and the surface bonding states were measured using high resolution electron energy loss spectroscopy ͑HREELS͒. [18][19][20] However, morphological changes following exposures to hydrogen plasma and AO have not been reported.…”
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“…[7][8][9][10] The correlation between chemical modification and morphological changes is important both from fundamental and applied points of views. 10,21 Following the exposures, the morphology of the polycrystalline diamond films was investigated using atomic force microscopy ͑AFM͒, and the surface bonding states were measured using high resolution electron energy loss spectroscopy ͑HREELS͒. [18][19][20] However, morphological changes following exposures to hydrogen plasma and AO have not been reported.…”
mentioning
confidence: 99%
“…10,21 The system was operated at a pressure of 50 mTorr, gas flow of 10 SCCM ͑SCCM denotes cubic centimeter per minute at STP͒ and power of 2000 W. During exposure the diamond samples were maintained at room temperature and located in the afterglow of the plasma system after two right angle bends in the gas tube system emerging from the plasma source. 10,21 The system was operated at a pressure of 50 mTorr, gas flow of 10 SCCM ͑SCCM denotes cubic centimeter per minute at STP͒ and power of 2000 W. During exposure the diamond samples were maintained at room temperature and located in the afterglow of the plasma system after two right angle bends in the gas tube system emerging from the plasma source.…”
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confidence: 99%
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