1985
DOI: 10.1016/0022-3093(85)90395-3
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Oxidation mechanisms in high pressure dc-sputtered a-Si films

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Cited by 13 publications
(3 citation statements)
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“…Thin film formation by rf-sputtering and other relevant techniques may lead to amorphous films with composition and properties depending on preparation conditions. For example, early studies on silicon dioxide, SiO 2 , have shown that this is indeed the case for thin films prepared by evaporation, dc-sputtering, as well as rf-magnetron sputtering . The influence of preparation conditions has been observed also for films formed by pulsed laser deposition (PLD), including differences in composition between thin films and the parent target glass in lead−germanates, and variations in ionic conductivity in lithium−silicate−vanadate thin films prepared by either PLD or rf-sputtering .…”
Section: Introductionmentioning
confidence: 95%
“…Thin film formation by rf-sputtering and other relevant techniques may lead to amorphous films with composition and properties depending on preparation conditions. For example, early studies on silicon dioxide, SiO 2 , have shown that this is indeed the case for thin films prepared by evaporation, dc-sputtering, as well as rf-magnetron sputtering . The influence of preparation conditions has been observed also for films formed by pulsed laser deposition (PLD), including differences in composition between thin films and the parent target glass in lead−germanates, and variations in ionic conductivity in lithium−silicate−vanadate thin films prepared by either PLD or rf-sputtering .…”
Section: Introductionmentioning
confidence: 95%
“…However, various deposition techniques may lead to glassy thin films with physicochemical properties presenting differences with respect to those of bulk materials with the same composition. For example, early studies on silicon dioxide, SiO 2 , have shown that this is indeed the case for thin films prepared by evaporation, 12 dc sputtering, 13 as well as by rf-magnetron sputtering.…”
Section: Introductionmentioning
confidence: 99%
“…Thus, when R, 5 7 x l o p 2 a weak absorption band was observed at 900 to 1200cmp'. According to literature [24], this is due to the existence of Si-0-Si groups. If After the long stay in the atmosphere the absorption intensity at 2000 cm-' was the same, whereas the absorption intensity at 2100 cm-I noticeably decreased and strong absorption appeared near 2170 to 2300 cm-(which is in agreement with [29,301) due to oxygen influence.…”
Section: Resultsmentioning
confidence: 99%