Oxidation and phase transitions of epitaxial tin oxide thin films on (1̄012) sapphire

Abstract

Articles you may be interested inGaN epitaxial films grown by hydride vapor phase epitaxy on polycrystalline chemical vapor deposition diamond substrates using surface nanostructuring with TiN or anodic Al oxide

Combined X-ray Diffraction and Diffuse Reflectance Analysis of Nanocrystalline Mixed Sn(II) and Sn(IV) Oxide Powders

“…This combination has been shown to enhance sensor sensitivity, attributed to the presence of p−n junctions due to having the p-type SnO semiconductor mixed with n-type SnO2. 22 Similar behavior has also been noted in the case of mixtures of p-type CuO with n-type SnO2. 23 Although there has been little work reported on systematic efforts to synthesize and optimize SnO/SnO2 for potential sensor applications, our previous study 24 has shown that nanocrystalline mixed Sn(II)/Sn(IV) oxide powders can easily be synthesized from SnCl2 precursor by a modified sol−gel technique.…”

Semiconducting Sn3O4 nanobelts: Growth and electronic structure

“…In a recent work, Seko 12 used first-principles techniques and cluster expansion to calculate the most probable structure for these intermediary systems obtaining consistent data with powder diffraction. However, electron and optical properties data are still missing due to the difficulties in synthesis and in the design of devices using Sn 3 4 , which in turn, decomposes into SnO 2 and metallic tin. In this way, when the oxireduction process is controlled, this nonstoichiometric compound should be grown.…”

“…3 The intermediary and nonstoichiometric SnO 2−x ͑0 Ͻ x Ͻ 1͒ compounds are hardly synthesized and the fewer experimental observations are only a result of nonintentional thermal oxidation of SnO and SnO 2 phases. 4,5 Sn 3 O 4 is a good example of a nonstoichiometric structure that deserves attention. It was first identified by Lawson 6 as a result of oxidation of another nonstoichiometric phase, SnO.…”

Study of microstructural, optical and electrical properties of Mg dopped SnO thin films

“…Whereas, few reports has been cited to investigate the micro-structural and electrical properties of SnO [8,9]. The SnO has been marked as anode material [10] and has been employed for other applications such as for gas sensitive material [11], coating substance [12], catalyst [12], precursor for the production of tin dioxide [13],and for p-channel thin film transistor [14,15]. The reported crystal habit of SnO is tetragonal crystal structure which is similar to that of the 'red' (a or litharge) modification of isovalent PbO [16].…”