Overview of the STORM program application to 193nm singe layer resists

Croffie, Ebo H.; Cheng, Mu Jeng; Neureuther, A. R.; Cirelli, R.; Houlihan, F. M.; Sweeney, James R.; Watson, Patrick; Nalamasu, O.; Rushkin, Ilya L.; Dimov, Ognian; Gabor, Allen H.

doi:10.1016/s0167-9317(00)00351-8

Cited by 6 publications

(5 citation statements)

References 2 publications

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“…To improve the calibration efficiency, these parameters are decoupled and extracted independently by three best fitting experiments. STORM, a resist simulation tool developed at Berkeley [11], is used in this fitting process.…”

Section: New Methodology Of Peb Characteriztion Based On Sequential Dmentioning

confidence: 99%

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Verification of a high-resolution PEB parameter extraction methodology based on double exposure technique

Yuan

Neureuther

2002

SPIE Proceedings

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Resist images printed with sequential double exposures of cross lines are shown to distinguish among chemicallyamplified resist materials and the resulting corner rounding is shown to provide a quantitative means of determining resist model parameters. The experiments are carried out on an ASML stepper with Shipley UV210 and IBM APEX-E resists exposed at 248 nm. The former resist showed notably less corner rounding. Parameters in both Fickean and nonFickean models are determined through simulation interpretation of SEMs with the STORM program. The diffusivity in UV210 is found to be about 35% lower and less nonlinear than that in APEX-E.

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Section: New Methodology Of Peb Characteriztion Based On Sequential Dmentioning

confidence: 99%

“…Models for acid diffusion include Fickean diffusion [7,8], non-Fickean enhanced exponentially by free volume [4,9], and diffusion exponentially reduced by relaxation [10]. TCAD tools available for simulation interpretation of experiments include PROLITH [7], STORM [11], and RIAR [12].…”

Section: Introductionmentioning

confidence: 99%

Verification of a high-resolution PEB parameter extraction methodology based on double exposure technique

Yuan

Neureuther

2002

SPIE Proceedings

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“…The co-existence of these physical mechanism in CARS can be represented by coupled reaction, diffusion, and volumetric change equations and make these resists as challenging to model as point-defect aided diffusion of dopants in silicon. 13,14) The common short-cut in resist modeling today is to simply assign the resist an effective blur function or to calibrate optical proximity correction (OPC) techniques from top down SEMs of test structures. 15) In pushing below the 30 nm feature size modeling many of the physical mechanism including statistical exposure and dissolution will likely need to be reexamined.…”

Section: Resist Profile Modelingmentioning

confidence: 99%

Modeling Optical Lithography Physics

Neureuther

Rubinstein

Chin

et al. 2010

Jpn. J. Appl. Phys.

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Key physical phenomena associated with resists, illumination, lenses and masks are used to show the progress in models and algorithms for modeling optical projection printing as well as current simulation challenges in managing process complexity for manufacturing. The amazing current capability and challenges for projection printing are discussed using the 22 nm device generation. A fundamental foundation for modeling resist exposure, partial coherent imaging and defect printability is given. The technology innovations of resolution enhancement and chemically amplified resist systems and their modeling challenges are overviewed. Automated chip-level applications in pattern pre-compensation and design-anticipation of residual process variations require new simulation approaches.

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“…This variable elimination strategy also applies to the PEB model for 193nm resist proposed by Croffie et al [10], where one more variable, the base concentration, is also considered. The model takes the following form: …”

Section: Algorithms In Storm3dmentioning

confidence: 99%

Three-dimensional post-exposure modeling and its applications

et al. 2001

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A three-dimension post-exposure bake (PEB) simulator (STORM3D) is described with improved algorithms for effectively simulating chemically-amplified resists (CAR) on desktop computers. A new FEM algorithm that is based on variable elimination is presented and shown to reduce the simulation time by roughly a factor of four. A dramatic increase in the size of problems that can be treated with limited memory is demonstrated by the use of a frontal method. Results for latent images of the deprotection concentration are presented for T-topping and footing in the presence of pre-diffused contaminants in elbow patterns. A methodology is suggested for estimating diffusion parameters through simulation interpretation of the cross-shape profile from a sequential double exposure of orthogonal lines. The sensitivity of the methodology is illustrated through comparing corner shapes for UVIIHS and APEX-E. The improvements in STORM3D allow 9,000 node 3D problems to be simulated in about one hour for 60s PEB on a 700Mhz Dec-alpha with 256M memory.

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Overview of the STORM program application to 193nm singe layer resists

Cited by 6 publications

References 2 publications

Verification of a high-resolution PEB parameter extraction methodology based on double exposure technique

Verification of a high-resolution PEB parameter extraction methodology based on double exposure technique

Modeling Optical Lithography Physics

Three-dimensional post-exposure modeling and its applications

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