Abstract:Non-volatile storage memory is widely considered to be one of the most promising candidates to replace dynamic random access memory and even static random access memory. It has recently received particular attention because of its great potential for brain-like neuromorphic applications. Phase-change materials, also known as Chalcogenide alloys, exhibit several especially advantageous traits for non-volatile applications. These include scalability, fast switching speeds, low switching energy and outstanding th… Show more
“…In the case of GST-225 and GSST, the Ge atoms deplete due to oxidation. A thin layer of indium tellurium oxide (ITO) is deposited on top of the GST patch [11] and GSST patch [25] to prevent oxidation. In the case of Sb 2 S 3 and Sb 2 Se 3 , a ZnS:SiO 2 (20%:80%) layer is used on top which prevents the loss of the sulfur/selenium atom [24].…”
Section: Pcmmentioning
confidence: 99%
“…Once a dormant area of research, PCMs were catapulted into the spotlight with the development of compact disc (CD), digital versatile disc (DVD), and Blu-ray disc (BD) that used GeTe-Sb 2 Te 3 (GST) and near-field optics as a means for tertiary data storage [4,5]. Subsequent advancements in optical devices have seen the increasing use of PCMs, as the multiplicity of reversibly switchable stable phases with considerably different refractive indices makes phase change materials an attractive choice for a variety of tasks including tuning [6], switching [7,8], beam steering [9], memory devices [10,11], computational memory devices [12], electro-absorption modulation [13,14], metasurfaces [15,16], and neuromorphic computing [17,18].…”
Phase change materials present a unique type of materials that drastically change their electrical and optical properties on the introduction of an external electrical or optical stimulus. Although these materials have been around for some decades, they have only recently been implemented for on-chip photonic applications. Since their reinvigoration a few years ago, on-chip devices based on phase change materials have been making a lot of progress, impacting many diverse applications at a very fast pace. At present, they are found in many interesting applications including switches and modulation; however, phase change materials are deemed most essential for next-generation low-power memory devices and neuromorphic computational platforms. This review seeks to highlight the progress thus far made in on-chip devices derived from phase change materials including memory devices, neuromorphic computing, switches, and modulators.
“…In the case of GST-225 and GSST, the Ge atoms deplete due to oxidation. A thin layer of indium tellurium oxide (ITO) is deposited on top of the GST patch [11] and GSST patch [25] to prevent oxidation. In the case of Sb 2 S 3 and Sb 2 Se 3 , a ZnS:SiO 2 (20%:80%) layer is used on top which prevents the loss of the sulfur/selenium atom [24].…”
Section: Pcmmentioning
confidence: 99%
“…Once a dormant area of research, PCMs were catapulted into the spotlight with the development of compact disc (CD), digital versatile disc (DVD), and Blu-ray disc (BD) that used GeTe-Sb 2 Te 3 (GST) and near-field optics as a means for tertiary data storage [4,5]. Subsequent advancements in optical devices have seen the increasing use of PCMs, as the multiplicity of reversibly switchable stable phases with considerably different refractive indices makes phase change materials an attractive choice for a variety of tasks including tuning [6], switching [7,8], beam steering [9], memory devices [10,11], computational memory devices [12], electro-absorption modulation [13,14], metasurfaces [15,16], and neuromorphic computing [17,18].…”
Phase change materials present a unique type of materials that drastically change their electrical and optical properties on the introduction of an external electrical or optical stimulus. Although these materials have been around for some decades, they have only recently been implemented for on-chip photonic applications. Since their reinvigoration a few years ago, on-chip devices based on phase change materials have been making a lot of progress, impacting many diverse applications at a very fast pace. At present, they are found in many interesting applications including switches and modulation; however, phase change materials are deemed most essential for next-generation low-power memory devices and neuromorphic computational platforms. This review seeks to highlight the progress thus far made in on-chip devices derived from phase change materials including memory devices, neuromorphic computing, switches, and modulators.
“…In particular, the fast phase transition in PCMs occurs gradually, and the switching speed is considerably high 40 rather than suddenly (time responses of about nanoseconds and picoseconds), increasing the possibility of adjustments. During the phase transition, the PCM film can be assumed to be in the intermediate phase composed by different regions of amorphous and crystalline atoms and this phase change kinetics can be accomplished by heating 41 . Figure 1 ( a ) Schematic representation of the hybrid absorber; ( b ) top view of the absorber the hybrid plasmonic absorber; ( c ) representation of the planar control absorber without Au nanoantennas; ( d ) unit cell of the hybrid plasmonic absorber.…”
Section: Structureâs Design and Methodsmentioning
Structures absorbing electromagnetic waves in the infrared spectral region are important optical components in key areas such as biosensors, infrared images, thermal emitters, and special attention is required for reconfigurable devices. We propose a three-dimensional metal-dielectric plasmonic absorber with a layer of PCMâs (Phase Change Materials). The phase shift effects of PCMs are numerically analyzed, and it is possible to obtain a shifting control of the resonant absorption peaks between the amorphous and crystalline states using the LorentzâLorenz relation. By using this empirical relation, we analyzed the peak absorption shift at intermediate phases between the amorphous and the crystalline. The geometric parameters of the structure with the PCM layer in the semi-crystalline state were adjusted to exhibit strong absorption for normal incidence. The effects of the oblique incidence on the absorption for the TM and TE polarization modes were also analyzed. Our results demonstrate that PCMs have great potential for reconfigurable nanophotonic devices.
“…In particular, the fast phase transition in PCMs occurs gradually, although the switching speed is considerably high [27] (in order of nanoseconds and picoseconds), rather than suddenly, which increases the possibility of adjustments. During the phase transition, the PCM film can be assumed to be in the intermediate phase composed of different proportions of amorphous and crystalline atoms and this phase change kinetics can be accomplished by heating [28]. Based on the optical constants of the PCM in both phases and using the theory of the effective medium [29]…”
Structures absorbing electromagnetic waves in the infrared spectral region are important optical components in key areas such as biosensors, infrared images and thermal emitters, and require special attention from reconfigurable devices. We propose a three-dimensional metal-dielectric plasmonic absorber with a layer of PCM's (Phase Change Materials). The phase shift effects of PCMs are analyzed, and it is possible to obtain a displacement control in the resonant absorption peaks between the amorphous and crystalline states using the Lorentz-Lorenz relation. Aided in this empirical relation, we analyzed the absorption shift in the intermediate phases between them. The geometric parameters of the structure with the pcm material layer in the semi-crystalline state were optimized to present strong absorption for normal incidence. The effects of the oblique incidence for the TM and TE polarization modes were also analyzed. Our results demonstrate that PCMs have great potential for reconfigurable nanophotonic devices.
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