Overview of light degradation research on crystalline silicon solar cells

Saitoh, Tadashi; Hashigami, H.; Rein, Stefan; Glunz, Stefan W.

doi:10.1002/1099-159x(200009/10)8:5<537::aid-pip349>3.3.co;2-n

Cited by 3 publications

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“…It is worth to comment that bifacial cells were produced with n-type PV-FZ silicon and monofacial ones with p-type (boron doped) solar grade Cz-silicon. The former does not have any physical mechanism for light-induced degradation whereas Cz can present degradation (Saitoh et al, 1999).…”

Section: After Exposure To Radiationmentioning

confidence: 99%

“…Phosphorus doped silicon has been studied as an alternative to boron doped Si because n-type wafers have higher tolerance to defects and impurities like iron (MacDonald and Geerligs, 2004) as well as solar cells did not present the light-induced degradation (LID) (Saitoh et al, 1999). For example, by using FZ n-type silicon, Guo and Cotter (2004) presented two kinds of laser-grooved bifacial solar cells, one with metal grid on both faces and other with interdigitated metal grids on the rear face.…”

Section: Introductionmentioning

confidence: 99%

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Electrical performance analysis of PV modules with bifacial silicon solar cells and white diffuse reflector

2013

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Section: After Exposure To Radiationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electrical performance analysis of PV modules with bifacial silicon solar cells and white diffuse reflector

2013

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“…Other calibration methods, for instance the self‐consistent method , can be used only if the effective lifetimes before and after illumination are identical. This condition is not met in some practical cases, such as the presence of oxygen complexes in p ‐type CZ substrates or iron contamination in boron‐doped multicrystalline wafers . This new method is immune from any variation of the effective lifetime, as both Δ n pl ( t ) and Δ n pc ( t ) are measured simultaneously and will be equally influenced by variations in effective lifetime.…”

Section: Lifetime Measurement Calibrationmentioning

confidence: 99%

Effective bulk doping concentration of diffused and undiffused silicon wafers obtained from combined photoconductance and photoluminescence measurements

Hameiri

Trupke

Gao

et al. 2012

Progress in Photovoltaics

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The effective doping concentration of the bulk of a silicon wafer is an important material parameter for photovoltaic applications. The techniques commonly used to measure the effective doping concentration are based on conductance or resistivity measurements and include both contacted methods, such as the four‐point probe, and contactless approaches, such as eddy current measurements. Applying these techniques to diffused wafers is complicated by the fact that the total conductance is the sum of the bulk conductance and the diffused layer conductance. Without further information about the emitter properties, a clear separation of these two parameters is not possible. This paper demonstrates a contactless method for specifically measuring the effective doping concentration of the bulk without significant influence from diffused layers. Copyright © 2012 John Wiley & Sons, Ltd.

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Section: Sustratos De Si Dopados Con Galiounclassified

“…La sustitución del boro como dopante tipo p en el silicio por el galio es una altemativa posible para la eliminación del defecto asociado a la inyección de portadores [98,99]. Por eso su empleo ha despertado interés en diferentes grupos de investigación, que han empleado sus estructuras típicas de fabricación de células para analizar la respuesta de éste [98,100]. Así han alcanzado resultados prometedores en comparación con los obtenidos al emplear los sustratos dopados con boro, tanto en células monocristalinas (con eficiencias por encima del 20% [101]) como multicristalinas (con eficiencias en tomo al 15% [102]).…”

Section: Sustratos De Si Dopados Con Galiounclassified

Caracterización, procesos y estructuras para la mejora de células solares de silicio

Jiménez¹

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The aim of this thesis is to suggest altemative device structures for the reduction of the rear recombination in the deep emitter solar cell developed at lES-UPM. The recombination increment in this part of the cell is due to the aluminium BSF structure, so it is necessary to develop a local contact structure in order to minimize the negative effect.But reduction of the rear contact área goes hand in hand with several problems that must be solved to reach high efficiency photovoltaic devices: the first one is the loss of volume improvement associated with aluminium gettering that forces to introduce a different gettering step in processes. The second important thing to tackle is the fact that non contacted área must be passivated.To deal with these problems, new structiires have been tested, making use of the phosphorus gettering, that is brought into the emitter creation step, and using different rear passivation altematives, such as active structiires like floating junction or passive ones like thermal grown oxide. 3.1. Disminución de la zona contactada. Problemas asociados y modelado de la nueva estructura 38 3.1.1. Cálculo analítico de la resistencia serie asociada a ima célula de contacto local posterior 38 3.1.2. Modelo PCID de las células de contacto local posterior 43 3.1.3. Variación de la calidad de la pasivación del área posterior no contactada 44 3.2. Estructuras para la pasivación del área no contactada 45 3.2.1. Pasivación de la superficie con su óxido 3.2.2. Empleo de estructuras activas para la pasivación. Concepto de unión flotante y su modelado 48 3.2.3. Efectos no deseados en una unión flotante 52 3.3. Conclusiones 54 Capítulo 4. Procesos de fabricación de células de P/AI con contacto posterior localizado 4.1. Células de P/Al de contacto posterior localizado y unión flotante 4.1.1. Alternativas de implementación en la fabricación 8 4.1.2. Seguimiento del tiempo de vida en los procesos de fabricación 4.1.3. Alternativas de implementación del contacto posterior 4.1.3.1. Resultado de las células con contacto posterior de malla en peine 4.1.3.2. Análisis de los resultados 4.1.3.3. Introducción del contacto puntual posterior 4.1.3.4. Resultado de las células con contacto posterior de malla de puntos 4.1.4. Otros problemas asociados a los procesos de fabricación 74 4.1.5. Conclusiones relativas a los procesos de fabricación con unión flotante 76 4.2. Fabricación de estructuras de dispositivo tipo Al-PERL 76 4.2.1. Resultados obtenidos con células Al-PERL 77 4.2.2. Comparación de estructiyas fabricadas Al-PERL y Al-PERL con UF 79 4.2.3. Simplificaciones adicionales al proceso de fabricación Al-PERL 80 4.2.4. Conclusiones relativas a los procesos de fabricación de estructuras Al-PERL sin imión flotante 82 4.3. Aumento del factor de forma (/?//_/acíor) en las células fabricadas 83 4.4. Fabricación de estructuras de dispositivo tipo PERC 84 u 4.4.1. Resultados obtenidos con células PERC 4.5. Reducción de la carga térmica del proceso de fabricación. Empleo de SiNx depositado por CVD como alternativa al óx...

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Overview of light degradation research on crystalline silicon solar cells

Cited by 3 publications

References 0 publications

Electrical performance analysis of PV modules with bifacial silicon solar cells and white diffuse reflector

Electrical performance analysis of PV modules with bifacial silicon solar cells and white diffuse reflector

Effective bulk doping concentration of diffused and undiffused silicon wafers obtained from combined photoconductance and photoluminescence measurements

Caracterización, procesos y estructuras para la mejora de células solares de silicio

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