Overload robust IGBT design for SSCB application

Abstract

This paper presents an optimised power semiconductor architecture based on the CIGBT approach to be used in solid-state circuit breaker (SSCB) applications where the conduction losses have to be as low as possible without compromising the forward voltage blocking capability. Indeed, a high overcurrent turn-off and shortcircuit withstand capabilities have to be ensured. Starting from a standard NPT-IGBT design for switching applications, the results show that the proposed device, which is optimised by the application of the individual clustered concept, offers a reduction in conduction losses of 13%, without compromise on voltage blocking capability. An original design solution is implemented to further ensure short-circuit and overload turn-off capabilities at maximum ambient temperature and twice the nominal rated current.

Parametric study of optimum gate-resistance for performance and short-circuit robustness of novel half-bridge IGBT modules

“…Note that in our samples even though the device started parasitic switching during S.C, but never involved dynamic latched up since upper thyristor never activated during the short circuit. It proves our samples were well designed in the Physical stage [7].…”